Solid-State Electronics

Solid-State Electronics, Vol.44, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1 - 9	Analytical turn-off current model for type of conductivity modulation power MOSFETS with extracted excess carrier Li ZJ, Zhang M, Yang J, Fang J
11 - 16	Mesh related problems in device simulation: Treatments of meshing noise and leakage current Shigyo N, Tanimoto H, Enda T
17 - 27	Switching in coplanar amorphous hydrogenated silicon devices Avila A, Asomoza R
29 - 35	Current instability in mercuric iodide devices Ponpon JP, Stuck R, Amann M
37 - 40	Band gap narrowing effect in Be-doped AlxGa1-xAs studied by photoluminescence spectroscopy Zheng HQ, Wang H, Zhang PH, Zeng Z, Radahakrishnan K, Yoon SF, Ng GI
41 - 48	Electrical transport at a non-ideal CrSi2-Si junction Anilturk OS, Turan R
49 - 57	On the leakage current of present-day manufactured semiconductor junctions Obreja VVN
59 - 62	Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors Borgarino M, Plana R, Fendler M, Vilcot JP, Mollot F, Barette J, Decoster D, Graffeuil J
63 - 69	Hot carrier-induced photon emission in 6H and 4H-SiC MOSFETs Bano E, Banc C, Ouisse T, Scharnholz S
71 - 77	Simulation of novel complementary bipolar inverters for low-voltage high-speed ULSI Bubennikov AN, Zykov AV
79 - 84	Bipolar cathode transferred-electron device for millimeterwave generation Dalle C, Friscourt MR
85 - 94	Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation Hossin M, Johnson CM, Wright NG, O'Neill AG
95 - 103	Moment equations for electrons in semiconductors: comparison of spherical harmonics and full moments Liotta SF, Struchtrup H
105 - 109	p-Ohmic contact resistance for GaAs(C)/GaN(Mg) Dang GT, Zhang AP, Ren F, Donovan SM, Abernathy CR, Hobson WS, Lopata J, Chu SNG, Cao XA, Wilson RG
111 - 116	The negatively charged insulator-semiconductor structure: concepts, technological considerations and applications Konig D, Ebest G
117 - 123	Current filamentation in bipolar power devices during dynamic avalanche breakdown Oetjen J, Jungblut R, Kuhlmann U, Arkenau J, Sittig R
125 - 131	An analytical MOSFET breakdown model including self-heating effect Ho CS, Liou JJ, Chen F
133 - 142	Current saturation control in silicon emitter switched thyristors Sawant S, Baliga BJ
143 - 146	Nonalloyed GaAs metal-semiconductor field effect transistor Lee CT, Huang JH, Tsai CD
147 - 173	Semiconductor lasers for planar integrated optoelectronics Sargent EH
175 - 183	Hole energy levels in p-type delta-doped Si quantum wells Gaggero-Sager LM, Mora-Ramos ME
185 - 187	High characteristic temperature (T-o=322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers Kim TG, Ogura M
189 - 192	The influence of post annealing on oxide charge-to-breakdown in tungsten polycide gate technology Lee B, Kim S, Kim J, Om J