Solid-State Electronics

Solid-State Electronics, Vol.46, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1 - 5	GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM
7 - 17	Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow Walkey DJ, Smy TJ, Reimer C, Schroter M, Tran H, Marchesan D
19 - 28	Dimensional effects in CMOS photodiodes Brouk I, Nemirovsky Y
29 - 33	Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations Sellai A, Dawson P
35 - 38	Properties of AlGaAs/GaAs heterojunction bipolar transistor with AlGaAs ledge bypass capacitor Oh TK, Lee JG, Yi KH, Baek CH, Ihn BU, Kang BK
39 - 44	Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling Li PW, Liao WM
45 - 48	Characteristics of InGaP/GaAs co-integrated delta-doped heterojunction bipolar transistor and doped-channel field effect transistor Tsai JH
49 - 52	Analysis of I-V measurements on Ag/p-SnS and Ag/p-SnSe Schottky barriers Safak H, Sahin M, Yuksel OF
53 - 59	Characterization of crosstalk between CMOS photodiodes Brouk I, Nemirovsky Y, Lachowicz S, Gluszak EA, Hinckley S, Eshraghian K
61 - 68	Carrier transport and luminescence in composite organic-inorganic light-emitting devices Shik A, Yu S, Johnson E, Ruda H, Sargent EH
69 - 73	Low-frequency noise characteristics of metamorphic In0.52Al0.48As/In0.60Ga0.40As double-heterostructure pseudomorphic high electron mobility transistors grown on a GaAs substrate Kim JH, Yoon HS, Lee JH, Chang WJ, Shim JY, Lee KH, Song JI
75 - 81	Analysis of lifetime control in high-voltage IGBTs Yuan X, Udrea F, Coulbeck L, Waind PR, Amaratunga GAJ
83 - 87	Recombination properties of electronic states in porous silicon Brodovoy OV, Skryshevsky VA, Brodovoy VA
89 - 96	Extended eigenfunctions in asymmetric double triangular quantum wells in weak electric fields Santiago RB, Guimaraes LG
97 - 101	Research on n+p type oxygen sensor Wu XH, Wu XJ, Tian M, Zhang S, Wang YD
103 - 108	New method for determination of harmonic distortion in SOIFD transistors Cerdeira A, Estrada M, Quintero R, Flandre D, Ortiz-Conde A, Sanchez FJG
109 - 113	Finding the optimum Al-Ti alloy composition for use as an ohmic contact to p-type SiC Crofton J, Mohney SE, Williams JR, Isaacs-Smith T
115 - 121	An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide Xu MZ, Tan CH
123 - 131	Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices Buot FA, Mittereder JA, Anderson WT, Ioannou DE
133 - 138	Plasma extraction transit time oscillations in bipolar power devices Gutsmann B, Mourick P, Silber D
139 - 143	A novel double heterojunction bipolar with composite collector Hsin YM, Lin CH, Fan CC, Huang MF, Lin KC
145 - 151	A delay model for DRAM bit lines with step and ramp word line signals Lin HC, Sha CH, Wong SC
153 - 156	Modeling inversion-layer carrier mobilities in all regions of MOSFET operation Remashan K, Wong NA, Chan K, Sim SP, Yang CY