Solid-State Electronics

Solid-State Electronics, Vol.48, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (31 articles)

1 - 1	A word from the new Editor Zaslavsky A
3 - 11	Application of tunnel diodes as millimeter cascades oscillator systems Kamh SA, Soliman FAS
13 - 21	A detailed theoretical and experimental noise study in n-on-p Hg0.68Cd0.32Te photodiodes Jozwikowski K, Musca CA, Faraone L, Jozwikowska A
23 - 28	Electrical characteristics of ultra-thin gate oxides (< 3 nm) prepared by direct current superimposed with alternating-current anodization Chen ZH, Huang SW, Hwu JG
29 - 35	Effects of the annealing temperature on Ni silicide/n-Si(100) Schottky contacts Zhu SY, Van Meirhaeghe RL, Forment S, Ru GP, Li BZ
37 - 41	Temperature dependence of pnp GaN/InGaN HBT performance Lee KP, Dabiran AM, Chow PP, Osinsky A, Pearton SJ, Ren F
43 - 49	Modeling and characterization of capacitive coupling in trench-isolated structures on SOI substrates Heinle U, Vestling L, Olsson J
51 - 54	Growth of semiconducting KTaO3 thin films Bae HJ, Sigman J, Park SJ, Heo YH, Boatner LA, Norton DP
55 - 59	Dependence of I-V characteristics on structural parameters of static induction transistor Wang YS, Li SY, Hu DQ
61 - 71	Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies Lee J, Bosman G
73 - 79	Device modeling and simulation of the performance of Cu(In1-x,Ga-x)Se-2 solar cells Song JY, Li SS, Huang CH, Crisalle OD, Anderson TJ
81 - 85	High-performance AlInAs/GaInAs delta-doped HEMT with negative differential resistance switch for logic application Tsai JH
87 - 89	Fabrication and characterization of poly(3,4-ethylenedioxythiophene) field-effect transistors Liang GR, Cui TH
91 - 97	Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O-2/NO process Samanta SK, Chatterjee S, Maikap S, Maiti CK
99 - 102	A fully integrated 2.4 GHz class-E amplifier with a 63% PAE by 0.18 mu m CMOS technologies Ho CC, Kuo CW, Hsiao CC, Chan YJ
103 - 109	Modeling and parameter extraction procedure for nanocrystalline TFTs Cerdeira A, Estrada M, Iniguez B, Pallares J, Marsal LF
111 - 118	A new self-defined empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs Wang WK, Lin CK, Wu CC, Li YJ, Chan YJ
119 - 124	Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels Chen YW, Hsu WC, Hsu RT, Wu YH, Chen YJ
125 - 132	Effects of temperature variation (300-600 K) in MOSFET modeling in 6H-silicon carbide Hasanuzzaman M, Islam SK, Tolbert LM
133 - 141	Sensitivity of frequency characteristics of semiconductor devices to random doping fluctuations Andrei P, Mayergoyz I
143 - 147	Transconductance frequency dispersion measurements on fully implanted 4H-SiC MESFETs Mitra S, Rao MV, Jones KA
149 - 154	Low-noise behavior of planar Mo/n-Si/Mo optical sensor structures Khunkhao S, Aoki T, Masui T, Sato K
155 - 161	Electrical properties of semi-insulating GaAs crystals grown by vertical gradient freeze and liquid encapsulated Czochralski techniques Polyakov AY, Markov AV, Smirnov NB, Govorkov AV
163 - 166	L-eff extraction for sub-100 nm MOSFET devices Ye QY, Biesemans S
167 - 170	A closed-loop system for the measurement of self-heating in BJTs O'Dell TH
171 - 174	Doping concentration evaluation using plasma propagation models in plasma immersion ion implantation (PIII) system Gupta D, Prasad B, George PJ
175 - 178	Thermal stability of WSiX Schottky contacts on n-type 4H-SiC Kim J, Ren F, Baca AG, Chung GY, Pearton SJ
179 - 182	RF performance of HVPE-grown AlGaN/GaN HEMTS Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ
183 - 187	Temperature dependence of DTMOS transistor characteristics Lee NJ, Choi NJ, Yu CG, Colinge JP, Park JT
189 - 192	Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl3 plasmas Lee JW, Lim WT, Baek IK, Yoo SR, Jeon MH, Cho GS, Pearton SJ, Abernathy CR
193 - 196	GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates LaRoche JR, Luo B, Ren F, Baik KH, Stodilka D, Gila B, Abernathy CR, Pearton SJ, Usikov A, Tsvetkov D, Soukhoveev V, Gainer G, Rechnikov A, Dimitriev V, Chen GT, Pan CC, Chyi JI