Solid-State Electronics

Solid-State Electronics, Vol.52, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (28 articles)

1 - 6	Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O-2 plasma treatment Kim SY, Hong K, Lee JL, Choi KH, Song KH, Ahn KC
7 - 10	Low frequency optical noise from organic light emitting diode Ke L, Zhao XY, Kumar RS, Chua SJ
11 - 16	Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector Li LH, Yin JZ, Shi B, Wang MS, Du GT, Wang YD, Jin YX
17 - 24	On the electrostatic behavior of floating nanoconductors Deleruyelle D, Micolau G
25 - 30	Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications Kabra S, Kaur H, Haldar S, Gupta M, Gupta RS
31 - 36	Effects of exciplex on the electroluminescent and photovoltaic properties of organic diodes based on terbium complex He H, Li WL, Su ZS, Li TL, Su WM, Chu B, Bi DF, Han LL, Wang D, Chen LL, Li B, Zhang ZQ, Hu ZZ
37 - 43	Phonon transport and thermal conductivity in a dielectric quantum waveguide Lu JD, Hou YL, Shao L, Yi L
44 - 48	Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements Ferraton S, Militaru L, Souifi A, Monfray S, Skotnicki T
49 - 52	An InP/InGaAs/InP DHBT with high power density at Ka-band Wang CM, Huang SC, Huang WK, Hsin YM
53 - 59	MIS polymeric structures and OTFTs using PMMA on P3HT layers Estrada M, Mejia I, Cerdeira A, Iniguez B
60 - 62	Fabrication of highly air-stable ambipolar thin-film transistors with organic heterostructure of F16CuPc and DH-alpha 6T Ye RB, Baba M, Suzuki K, Mori K
63 - 66	Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction Zhang Y, Cao X, He Z, Zhuang CQ, Chen YF, Fang JX
67 - 72	A unified charge model for symmetric double-gate and surrounding-gate MOSFETs Lu HX, Yu B, Taur Y
73 - 77	Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity Belgacem H, Merazga A
78 - 85	Numerical and experimental indication of thermally activated tunneling transport in CIS monograin layer solar cells Cernivec G, Jagomagi A, Smole F, Topic M
86 - 90	Very low-power CMOS LNA for UWB wireless receivers using current-reused topology Kao HL, Chang KC
91 - 98	A derivation of the van der Pauw formula from electrostatics Weiss JD, Kaplar RJ, Kambour KE
99 - 106	Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects Diagne B, Pregaldiny F, Lallement C, Sallese JM, Krummenacher F
107 - 114	Simulation of a dual gate organic transistor compatible with printing methods Takshi A, Dirnopoulos A, Madden JD
115 - 120	A new small-signal modeling and extraction method in AlGaN/GaN HEMTs Lu J, Wang Y, Ma L, Yu ZP
121 - 125	High efficiency and color saturated blue electroluminescence by using 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl as the thinner host and hole-transporter Li MT, Li WL, Su WM, Zang FX, Chu B, Xin Q, Bi DF, Li B, Yu TZ
126 - 133	Electrical characteristics related to silicon film thickness in advanced FD SOI-MOSFETs Ohata A, Casse M, Faynot O
134 - 139	Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization Hasan MT, Bhuiyan AG, Yamamoto A
140 - 145	Ultra-low resistivity Al+ implanted 4H-SiC obtained by microwave annealing and a protective graphite cap Sundaresan SG, Mahadik NA, Qadri SB, Schreifels JA, Tian YL, Zhang QC, Gomar-Nadal E, Rao MV
146 - 149	Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs Tsai JH, Li CM
150 - 155	High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates Nomura T, Kambayashi H, Niiyama Y, Otomo S, Yoshida S
156 - 163	Tapered grating effects on static properties of a bistable QWS-DFB semiconductor laser amplifier Aleshams M, Moravvej-Farshi MK, Sheikhi MH
164 - 170	Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETs Okayama T, Arthur SD, Garrett JL, Rao MV