Solid-State Electronics

Solid-State Electronics, Vol.54, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (15 articles)

1 - 3	Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection Semendy F, Singh S, Litz M, Wijewarnasuriya P, Blaine K, Dhar N
4 - 7	Study of GaN epilayers growth on freestanding Si cantilevers Chen J, Wang X, Wu AM, Zhang B, Wang X, Wu YX, Zhu JJ, Yang H
8 - 13	Experimental measurement of work function in doped silicon surfaces Novikov A
14 - 17	Pulse-agitated self-convergent programming for 4-bit per cell dual charge storage layer flash memory Zhang G, Yoo WJ
18 - 21	Operational upsets and critical new bit errors in CMOS digital inverters due to high power pulsed electromagnetic interference Kim K, Iliadis AA
22 - 27	A comparative study of photoconductivity and carrier transport in a-Si:H p-i-n solar cells with different back contacts Kaplan R, Kaplan B, Hegedus SS
28 - 36	Analysis of noise in CMOS image sensor based on a unified time-dependent approach Brouk I, Nemirovsky A, Alameh K, Nemirovsky Y
37 - 41	Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents Wu YC, Chang EY, Lin YC, Kei CC, Hudait MK, Radosavljevic M, Wong YY, Chang CT, Huang JC, Tang SH
42 - 47	An analytical model for current-voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect Cheng XX, Li M, Wang Y
48 - 51	Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure Parizi KB, Peyvast N, Mousavi BK, Mohajerzadeh S, Fathipour M
52 - 57	CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits Hayati M, Rezaei A, Seifi M
58 - 62	AC conductivity and dielectric properties of thermally evaporated PbTe thin films Kungumadevi L, Sathyamoorthy R, Subbarayan A
63 - 66	Improved infrared (IR) microscope measurements and theory for the micro-electronics industry Oxley CH, Hopper RH, Hill G, Evans GA
67 - 78	Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base Oudir A, Mahdouani M, Mansouri S, Bourguiga R, Pardo F, Pelouard JL
79 - 83	Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator Sugiura S, Hayashi Y, Kishimoto S, Mizutani T, Kuroda M, Ueda T, Tanaka T