| 1 - 4 |
Trap origin of field-dependent mobility of the carrier transport in organic layers
Montero JM, Bisquert J |
| 5 - 7 |
Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
Simms RJT, Uren MJ, Martin T, Powell J, Forsberg U, Lundskog A, Kakanakova-Georgieva A, Janzen E, Kuball M |
| 8 - 12 |
A novel fabrication process of a gate offset nonvolatile memory on glass and the influence of the gate offset structure on the device characteristics
Duy NV, Lakshminarayan N, Jung S, Nga NT, Son DN, Lee W, Yi J |
| 13 - 18 |
Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations
Cheralathan M, Cerdeira A, Iniguez B |
| 19 - 24 |
RF power performance evaluation of surface channel diamond MESFETs
Camarchia V, Cappelluti F, Ghione G, Rossi MC, Calvani P, Conte G, Pasciuto B, Limiti E, Dominijanni D, Giovine E |
| 25 - 28 |
Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo
Martin-Bragado I, Zographos N |
| 29 - 36 |
Characterization of near-surface electrical properties of multi-crystalline silicon wafers
Drummond P, Kshirsagar A, Ruzyllo J |
| 37 - 43 |
3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture
Yun JG, Lee JD, Park BG |
| 44 - 48 |
Experimental study of mobility degradation in ultrathin high-kappa based MOSFETs
Atarah SA |
| 49 - 53 |
High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt
Yuan B, Zheng XJ, Chen YQ, Yang B, Zhang T |
| 54 - 58 |
Spectral response of blue-sensitive Si photodetectors in SOI
Chu J, Han Z, Meng F, Wang Z |
| 59 - 63 |
Investigation on UV photodetector behavior of RF-sputtered ZnO by impedance spectroscopy
Al-Hardan NH, Abdullah MJ, Ahmad H, Aziz AA, Low LY |
| 64 - 67 |
High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
Chen WB, Cheng CH, Lin CW, Chen PC, Chin A |
