| 1 - 6 |
Thermal effects in AlGaN/GaN/Si high electron mobility transistors
Saidi I, Cordier Y, Chmielowska M, Mejri H, Maaref H |
| 7 - 12 |
3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs
David JK, Register LF, Banerjee SK |
| 13 - 17 |
On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility. transistor (PHEMT)
Huang CC, Chen HI, Cheng SY, Chen LY, Tsai TH, Liu YC, Chen TY, Hsu CH, Liu WC |
| 18 - 22 |
Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation
Ouyang YJ, Guo J |
| 23 - 28 |
Characterization of laser carved micro channel polycrystalline silicon solar cell
Chen HC, Chang LB, Jeng MJ, Lai CS |
| 29 - 32 |
Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs
Bengi A, Jang SJ, Yeo CI, Mammadov T, Ozcelik S, Lee YT |
| 33 - 37 |
The effects of active layer thickness on Programmable Metallization Cell based on Ag-Ge-S
Wang F, Dunn WP, Jain M, De Leo C, Vickers N |
| 38 - 45 |
A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis
Salimy S, Goullet A, Rhallabi A, Challali F, Toutain S, Saubat JC |
| 46 - 52 |
On the electrical degradation and green band formation in alpha- and beta-phase poly(9,9-dioctyfluorene) polymer light-emitting diodes
Arredondo B, Romero B, Gutierrez-Llorente A, Martinez AI, Alvarez AL, Quintana X, Oton JM |
| 53 - 57 |
GaAs HEMT as sensitive strain gauge
Liu J, Hou TT, Xue CY, Tan ZX, Liu GW, Zhang BZ, Zhang WD |
| 58 - 64 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time
Ramirez-Garcia E, Michaillat M, Aniel F, Zerounian N, Enciso-Aguilar M, Rideau D |
| 65 - 68 |
Improve on/off ratio of organic heterojunction transistors by adopting single-sandwich configuration
Shi JW, Wang H, Wang HB, Tian HK, Geng YH, Yan DH |
| 69 - 75 |
DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region
Chang YH, Cheng ZT |
| 76 - 80 |
Effect of rapid thermal annealing on pentacene-based thin-film transistors
Chou DW, Huang CJ, Su CM, Yang CF, Chen WR, Meen TH |
| 81 - 86 |
Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs
You SZ, Decoutere S, Sibaja-Hernandez A, Venegas R, Van Huylenbroeck S, De Meyer K |
| 87 - 92 |
Digital signal propagation delay in a nano-circuit containing reactive and resistive elements
Arora VK, Chek DCY, Hashim AM |
| 93 - 95 |
Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
Miranda E, Palumbo F |
| 96 - 99 |
Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation
Huang SY, Chang TC, Chen MC, Tsao SW, Chen SC, Tsai CT, Lo HP |
| 100 - 105 |
Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO2 tunnel layer
Kang TK, Liu HW, Wang FH, Lin CL, Liao TC, Wu WF |
| 106 - 110 |
Origin of low-frequency noise in pentacene field-effect transistors
Xu Y, Minari T, Tsukagoshi K, Chroboczek J, Balestra F, Ghibaudo G |
| 111 - 115 |
Design and optimization of high voltage LDMOS transistors on 0.18 mu m SOI CMOS technology
Toulon G, Cortes I, Morancho F, Hugonnard-Bruyere E, Villard B, Toren WJ |
| 116 - 120 |
Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination
Tsai CL, Tsai CL, He GR, Su TH, You CF, Lin YJ |
