Solid-State Electronics

Solid-State Electronics, Vol.49, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (22 articles)

1569 - 1575	High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures Pavanello MA, Martino JA, Raskin JP, Flandre D
1576 - 1580	Prediction of plasma processes using neural network and genetic algorithm Kim B, Bae J
1581 - 1588	A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs Zhang DW, Zhang H, Yu ZP, Tian LL
1589 - 1594	Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps Guhel Y, Boudart B, Vellas N, Gaquiere C, Delos E, Ducatteau D, Bougrioua Z, Germain M
1595 - 1598	Novel structure of white organic electroluminescent devices Tsou CC, Lu HT, Yokoyama M
1599 - 1603	The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection Huang CH, Hwu JG
1604 - 1616	A sum-over-paths impulse-response moment-extraction algorithm for RLC IC-interconnect networks Le Coz YL, Krishna D, Hariharan G, Petranovic DM
1617 - 1622	A comparative study of different contact resistance test structures dedicated to the power process technology Oussalah S, Djezzar B, Jerisian R
1623 - 1631	A scalable substrate network for compact modelling of deep trench insulated HBT Fregonese S, Celi D, Zimmer T, Maneux C, Sulima PY
1632 - 1638	Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates Arulkumaran S, Egawa T, Ishikawa H
1639 - 1648	Modeling and simulation of STacked gate oxide (STGO) architecture in silicon-on-nothing (SON) MOSFET Kasturi P, Saxena M, Gupta RS
1649 - 1654	Effects of dielectric dispersion in multiplier chips Maity T, Ghosh D, Mahata CR
1655 - 1661	Floating contact transmission line modelling: An improved method for ohmic contact resistance measurement Lijadi M, Pardo F, Bardou N, Pelouard JL
1662 - 1668	Electron trapping effects in C- and Fe-doped GaN and AlGaN Lopatiuk O, Osinsky A, Dabiran A, Gartsman K, Feldman I, Chernyak L
1669 - 1673	N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC
1674 - 1677	Continuous wave operation of a 250 mW AlGaAs laser diode Kim TG, Kim DS, Kim KC, Jang KY, Moon GW, Park JI, Lee SW, Kim MD, Koh JH
1678 - 1682	A modified transferred-electron high-field mobility model for GaN devices simulation Turin VO
1683 - 1692	A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation de Souza M, Pavanello MA, Iniguez B, Flandre D
1693 - 1696	Forward-current electroluminescence from GaN/ZnO double heterostructure diode Alivov YI, Ozgur U, Dogan S, Liu C, Moon Y, Gu X, Avrutin V, Fu Y, Morkoc H
1697 - 1701	Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes Crouse D, Solomon R
1702 - 1707	A spice-like reliability model for deep-submicron CMOS technology Cui Z, Liou JJ
1708 - 1712	Performances of CYTOP (TM) low-k dielectric layer bridged GaAs-based enhancement mode pHEMT for wireless power application Lin CH, Oshita FK, Jennison MJ, Chang PC, Wei J, Wilhelmi C, Bramlett M, Parkhurst R, Strathman SD, Maple M