Solid-State Electronics

Solid-State Electronics, Vol.52, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (36 articles)

1473 - 1473	PAPERS SELECTED FROM THE INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM 2007-ISDRS 2007 Foreword Iliadis AA, Richter C
1474 - 1481	Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Rafhay Q, Clerc R, Ghibaudo G, Pananakakis G
1482 - 1485	Design and optimization of the SOI field effect diode (FED) for ESD protection Yang Y, Salman AA, Ioannou DE, Beebe SG
1486 - 1490	Capacitance modeling of short-channel double-gate MOSFETs Borli H, Kolberg S, Fjeldly TA
1491 - 1497	Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices Wang G, White MH
1498 - 1504	Fabrication and characterization of fin SONOS flash memory with separated double-gate structure Yun JG, Kim Y, Park IH, Lee JH, Kang S, Lee DH, Cho S, Kim DH, Lee GS, Sim WB, Son Y, Shin H, Lee JD, Park BG
1505 - 1511	Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model Svilicic B, Jovanovic V, Suligoj T
1512 - 1517	Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks Fu CH, Chien PY, Chang-Liao KS, Wang TK, Wu WF
1518 - 1524	Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer Tsai TI, Lin HC, Lee YJ, Chen KS, Wang J, Hsueh FK, Chao TS, Huang TY
1525 - 1529	New EEPROM concept for single bit operation Raguet JR, Laffont R, Bouchakour R, Bidal V, Regnier A, Mirabel JM
1530 - 1535	Characterization of CoxNiyO hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices Cheng CL, Liu CW, Chang-Liao KS, Tsai PH, Jeng JT, Huang SW, Dai BT
1536 - 1541	Impact of high-kappa dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory Pavel AA, Khan MA, Kirawanich P, Islam NE
1542 - 1549	Sensitivity of static noise margins to random dopant variations in 6-T SRAM cells Oniciuc L, Andrei P
1550 - 1554	An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test Le Roux C, Lopez L, Firiti A, Ogier JL, Lalande F, Laffont R, Micolau G
1555 - 1562	Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells Kanyogoro E, Peckerar M, Hughes H, Liu M
1563 - 1568	Two-band k center dot p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility Sverdlov V, Karlowatz G, Dhar S, Kosina H, Selberherr S
1569 - 1572	The role of carbon on performance of strained-Si:C surface channel NMOSFETs Lee MH, Chang ST, Maikap S, Huang CF
1573 - 1577	Novel SONOS - type nonvolatile memory device with stacked tunneling and charge trapping layers Tsai PH, Chang-Liao KS, Wu TY, Wang TK, Tzeng PJ, Lin CH, Lee LS, Tsai MJ
1578 - 1583	NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications Jang WW, Yoon JB, Kim MS, Lee JM, Kim SM, Yoon EJ, Cho KH, Lee SY, Choi IH, Kim DW, Park D
1584 - 1588	Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors Lu CS, Lin HC, Huang TY
1589 - 1593	Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference Kim K, Iliadis AA
1594 - 1601	Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil Jamshidi-Roudbari A, Kuo PC, Hatalis M
1602 - 1605	High-speed thermal analysis of high power diode arrays Rada N, Triplett G, Graham S, Kovaleski S
1606 - 1609	A 2D non-parabolic six-moments model Vasicek M, Cervenka J, Wagner M, Karner M, Grasser T
1610 - 1614	Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency Aggarwal R, Agrawal A, Gupta M, Gupta RS
1615 - 1618	Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric Chen CP, Lin TD, Lee YJ, Chang YC, Hong M, Kwo J
1619 - 1624	Auxiliary components for kilopixel transition edge sensor arrays Brown AD, Chuss D, Mikula V, Henry R, Wollack E, Zhao Y, Hilton GC, Chervenak JA
1625 - 1630	Modeling and design of a monolithically integrated power converter on SiC Yu LC, Sheng K, Zhao JH
1631 - 1635	Challenges in SiC power MOSFET design Matocha K
1636 - 1646	Demonstration of the first SiC power integrated circuit Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L
1647 - 1651	Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio Parro RJ, Scardelletti MC, Varaljay NC, Zimmerman S, Zorman CA
1652 - 1659	Proton-induced SEU in SiGe digital logic at cryogenic temperatures Sutton AK, Moen K, Cressler JD, Carts MA, Marshall PW, Pellish JA, Ramachandran V, Reed RA, Alles ML, Nju G
1660 - 1668	Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers Pham AT, Jungemann C, Klawitter M, Meinerzhagen B
1669 - 1673	Tuning nonlinear susceptibility in strained AlGaAs/InGaAs quantum cascade lasers Roberts D, Triplett G
1674 - 1679	Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots Han DS, Asryan LV
1680 - 1686	An empirical study of dynamic properties of an individual carbon nanotube electron source system Ribaya BP, Niemann DL, Makarewicz J, Gunther NG, Nguyen CV, Rahman M