Solid-State Electronics

Solid-State Electronics, Vol.53, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (15 articles)

1059 - 1062	The split-gate flash memory with an extra select gate for automotive applications Tsair YS, Fang YK, Wang YH, Chu WT, Hsieh CT, Lin YT, Wang CS, Wong MR, Lee S, Smolen R, Liu B
1063 - 1066	Stability of PMMA on P3HT PTFTs under stress Estrada M, Mejia I, Cerdeira A, Pallares J, Marsal LF, Iniguez B
1067 - 1075	Comparative analysis of unity gain frequency of top and bottom-contact organic thin film transistors Islam MN, Mazhari B
1076 - 1085	Method of extracting effective channel length for nano-scale n-MOSFETs Choi HW, Lee NH, Kang HS, Kang BK
1086 - 1091	Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation Lee HK, Song YM, Lee YT, Yu JS
1092 - 1098	A study of gateless OTP cell using a 45 nm CMOS compatible process Tsai YH, Lin KC, Chiu HY, Shih HS, King YC, Lin CJ
1099 - 1102	Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency Hong EJ, Byeon KJ, Park H, Hwang J, Lee H, Choi K, Kim HS
1103 - 1106	Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Fregonese S, Maneux C, Zimmer T
1107 - 1111	Thickness-dependent threshold voltage in polycrystalline pentacene-based thin-film transistors Wang YW, Cheng HL
1112 - 1115	Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure Kim SD
1116 - 1125	Preparation and characterization of solid n-TiO2/p-NiO hetrojunction electrodes for all-solid-state dye-sensitized solar cells Lee YM, Lai CH
1126 - 1129	Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors Sandow C, Knoch J, Urban C, Zhao QT, Mantl S
1130 - 1134	Multiband simulation of quantum transport in nanoscale double-gate MOSFETs Iwata H, Matsuda T, Ohzone T
1135 - 1143	Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates Arimoto K, Watanabe M, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y, Usami N, Nakajima K
1144 - 1148	Finite element simulation of metal-semiconductor-metal photodetector Guarino G, Donaldson WR, Mikulics M, Marso M, Kordos P, Sobolewski R