Solid-State Electronics

Solid-State Electronics, Vol.54, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (31 articles)

1051 - 1051	SELECTED PAPERS FROM ISDRS 2009 - Foreword Iliadis AA, Akturk A
1052 - 1059	Application of a novel test system to characterize single-event effects at cryogenic temperatures Ramachandran V, Gadlage MJ, Ahlbin JR, Narasimham B, Alles ML, Reed RA, Bhuva BL, Massengill LW, Black JD, Foster CN
1060 - 1065	Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL) Cho S, Lee JH, O'uchi S, Endo K, Masahara M, Park BG
1066 - 1070	Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers Liao SC, Sun K, Dutta M, Stroscio MA
1071 - 1075	Epitaxial graphene top-gate FETs on silicon substrates Kang HC, Karasawa H, Miyamoto Y, Handa H, Fukidome H, Suemitsu T, Suemitsu M, Otsuji T
1076 - 1082	Atomic layer deposited high-k nanolaminate capacitors Smith SW, McAuliffe KG, Conley JF
1083 - 1087	Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node Darbandy G, Ritzenthaler R, Lime F, Garduno I, Estrada M, Cerdeira A, Iniguez B
1088 - 1093	The spatial origin of current noise in semiconductor devices in the framework of semiclassical transport Korman CE, Noaman BA
1094 - 1097	Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF
1098 - 1104	Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs Meyer DJ, Bass R, Katzer DS, Deen DA, Binari SC, Daniels KM, Eddy CR
1105 - 1112	High-temperature modeling of AlGaN/GaN HEMTs Vitanov S, Palankovski V, Maroldt S, Quay R
1113 - 1118	Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel Liu LJ, Chang-Liao KS, Keng WC, Wang TK
1119 - 1124	Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Zhao HP, Liu GY, Arif RA, Tansu N
1125 - 1129	Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses Tomaino JL, Jameson AD, Lee YS, Prineas JP, Steiner JT, Kira M, Koch SW
1130 - 1134	Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates Sampath AV, Garrett GA, Readinger ED, Enck RW, Shen H, Wraback M, Grandusky JR, Schowalter LJ
1135 - 1142	A toggle MRAM bit modeled in Verilog-A Engelbrecht LM, Jander A, Dhagat P, Hall M
1143 - 1149	ZnO nanobridge devices fabricated using carbonized photoresist Pelatt BD, Huang CC, Conley JF
1150 - 1154	Crystal quality and conductivity type of (002) ZnO films on (100) Si substrates for device applications Sardari SE, Iliadis AA, Stamataki M, Tsamakis D, Konofaos N
1155 - 1159	Effects of fin width on memory windows in FinFET ZRAMs Zhang EX, Fleetwood DM, Alles ML, Schrimpf RD, Mamouni FE, Xiong W, Cristoloveanu S
1160 - 1165	High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric Fu CH, Chang-Liao KS, Lu HY, Li CC, Wang TK
1166 - 1172	Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 mu m bulk CMOS technology Koricic M, Suligoj T, Mochizuki H, Morita S, Shinomura K, Imai H
1173 - 1184	Reliable procedure for electrical characterization of MOS-based devices Dobes J, Michal J, Panko V, Pospisil L
1185 - 1191	Facile pyrolytic synthesis of silicon nanowires Chan JC, Tran H, Pattison JW, Rananavare SB
1192 - 1196	A high efficient, low power, and compact charge pump by vertical MOSFETs Sakui K, Endoh T
1197 - 1203	Charge trapping and current-conduction mechanisms of metal-oxide-semiconductor capacitors with LaxTay dual-doped HfON dielectrics Cheng CL, Horng JH, Chang-Liao KS, Jeng JT, Tsai HY
1204 - 1210	Controlled growth, patterning and placement of carbon nanotube thin films Sangwan VK, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED
1211 - 1215	Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas Yesilkoy F, Choi K, Dagenais M, Peckerar M
1216 - 1220	A SiGe/Si multiple quantum well avalanche photodetector Sun PH, Chang ST, Chen YC, Lin HC
1221 - 1226	Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions Song H, Kim JS, Kim EK, Lee SH, Kim JB, Son JS, Hwang SM
1227 - 1231	Si implant-assisted Ohmic contacts to GaN Nguyen C, Shah P, Leong E, Derenge M, Jones K
1232 - 1237	The benefits and current progress of SiC SGTOs for pulsed power applications Ogunniyi A, O'Brien H, Lelis A, Scozzie C, Shaheen W, Agarwal A, Zhang J, Callanan R, Temple V