Solid-State Electronics

Solid-State Electronics, Vol.47, No.11 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (40 articles)

1881 - 1895	RF MOSFET: recent advances, current status and future trends Liou JJ, Schwierz F
1897 - 1901	Terahertz self-oscillations in negative-effective-mass oscillators Cao JC, Lei XL, Liu HC
1903 - 1907	Electronic effects of light ion damage in hydrogenated amorphous silicon Shannon JM, Chua CH
1909 - 1915	A unified I-V model for PD/FD SOI MOSFETs with a compact model for floating body effects Bolouki S, Maddah M, Afzali-Kusha A, El Nokali M
1917 - 1920	Device simulations of nanocrystalline silicon thin-film transistors Dosev D, Iniguez B, Marsal LF, Pallares J, Ytterdal T
1921 - 1926	Computational load pull simulations of SiC microwave power transistors Jonsson R, Wahab Q, Rudner S, Svensson C
1927 - 1936	Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers Lederer D, Raskin JP
1937 - 1941	A high performance RF LDMOSFET in thin film SOI technology with step drift profile Luo J, Cao G, Madathil SNE, De Souza MM
1943 - 1952	Sub-circuit models of silicon-on-insulator insulated-gate pn junction devices for electrostatic discharge protection circuit design and their applications Wakita S, Omura Y
1953 - 1958	A new procedure to extract the threshold voltage of MOSFETs using noise-reduction techniques Picos R, Roca M, Iniguez B, Garcia-Moreno E
1959 - 1967	A review of leakage current in SOICMOS ICs: impact on parametric testing techniques Iniguez B, Raskin JP, Simon P, Flandre D, Segura J
1969 - 1972	Application of advanced metal-oxide-semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit Matsuo N, Kihara H, Takami Y
1973 - 1981	Defect spectroscopy using 1/f(gamma) noise of gate leakage current in ultrathin oxide MOSFETs Lee J, Bosman G
1983 - 1987	A model for multi-finger HBTs including current gain collapse effects Garlapati A, Prasad S, Vempada P, Munshi K
1989 - 1994	Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs Huang HK, Wang CS, Wang YH, Wu CL, Chang CS
1995 - 2000	Hafnium oxide gate dielectric for strained-Si1-xGex Maiti CK, Maikap S, Chatterjee S, Nandi SK, Samanta SK
2001 - 2010	Ohmic contact properties of Ni/C film on 4H-SiC Lu WJ, Mitchel WC, Landis GR, Crenshaw TR, Collins WE
2011 - 2014	Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion Su YK, Chen WB, Lin CL, Wang HC, Chen SM, Liang KM
2015 - 2018	A fully integrated dual-band VCO by 0. 18 mu m CMOS technologies Ho CC, Kuo CW, Hisao CC, Chan YJ
2019 - 2022	Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo CH, Chang SJ, Su YK, Wang CK, Wu LW, Sheu JK, Wen TC, Lai WC, Tsai JM, Lin CC
2023 - 2026	Nitride-based 2DEG photodetectors with a large AC responsivity Chang SJ, Kuan TM, Ko CH, Su YK, Webb JB, Bardwell JA, Liu Y, Tang H, Lin WJ, Cherng YT, Lan WH
2027 - 2030	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu LW, Chang SJ, Su YK, Chuang RW, Hsu YP, Kuo CH, Lai WC, Wen TC, Tsai JM, Sheu JK
2031 - 2034	Effect of substituted derivatives on carrier transport in organic polymers Kwok HHL
2035 - 2041	Ohmic contacts to 3C-SiC for Schottky diode gas sensors Roy S, Jacob C, Basu S
2043 - 2048	A unified model for high-frequency current noise of MOSFETs Teng HF, Jang SL, Juang MH
2049 - 2053	Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices Or DCT, Lai PT, Sin JKO
2055 - 2061	Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices Andrei P, Mayergoyz I
2063 - 2066	A novel integrable surface acoustic wave notch filter Tang IT, Chen HJ, Houng MP, Wang YH
2067 - 2074	Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom Ortiz-Conde A, Sanchez FJG, Guzman M
2075 - 2080	DC electric field assisted alignment of carbon nanotubes on metal electrodes Kumar MS, Lee SH, Kim TY, Kim TH, Song SM, Yang JW, Nahm KS, Suh EK
2081 - 2084	Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate Lee J, Liu DM, Lin ZJ, Lu W, Flynn JS, Brandes GR
2085 - 2088	Fabrication of indium resistors by layer-by-layer nanoassembly and microlithography techniques Shi JS, Cui TH
2089 - 2095	A 2D-electron-gas terahertz detector based on the bipolar inversion channel field-effect transistor Huo Y, Taylor GW
2097 - 2103	Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs Bernat J, Javorka P, Fox A, Marso M, Luth H, Kordos P
2105 - 2111	Very low Schottky barrier to n-type silicon with PtEr-stack silicide Tang XH, Katcki J, Dubois E, Reckinger N, Ratajczak J, Larrieu G, Loumaye P, Nisole O, Bayot V
2113 - 2116	Thermal resistance variation of HBT with high junction temperature and bias condition Su YK, Wei SC, Chang LS, Wang RL, Wang CJ
2117 - 2125	Explicit current model for dual-gate MOSFET Karahaliloglu K, Dundar G
2127 - 2130	Optoelectronic property of PN junction on erbium-doped silicon using thermal diffusion method Bing RC, Yuan YZ, Bo Y
2131 - 2134	Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET Saxena M, Haldar S, Gupta M, Gupta RS
2135 - 2137	Computationally efficient solution of carrier trapping/annihilation equation in MOS devices using Runge-Kutta method Samanta P, Sarkar CK