Solid-State Electronics

Solid-State Electronics, Vol.50, No.11-12 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

1673 - 1676	Thin film SOIHBT: A study of the effect of substrate bias on the electrical characteristics Fregonese S, Avenier G, Maneux C, Chantre A, Zimmer T
1677 - 1681	ICP-induced defects in GaN characterized by capacitance analysis Lan WH, Huang KC, Huang KF
1682 - 1686	Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system Koo HC, Yi H, Song JD, Chang J, Han SH
1687 - 1691	A novel approach to fabricate a PPy/p-type Si heterojunction Poddar R, Luo C
1692 - 1695	Structural and electrical properties of brush plated ZnTe films Murali KR, Ziaudeen M, Jayaprakash N
1696 - 1704	Modeling of N-well device and N-well field resistors Singh RK, Roy JN
1705 - 1709	Degradation of 1/f noise in short channel MOSFETs due to halo angle induced V-T non-uniformity and extra trap states at interface Ahsan AKM, Ahmed S
1710 - 1715	Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic Ho CH, Shiau YH
1716 - 1727	A new analytical model for photo-dependent capacitances of GaAs MESFET's with emphasis on the substrate related effects Murty NVLN, Jit S
1728 - 1731	Low-temperature carbon monoxide gas sensors based gold/tin dioxide Wang SR, Zhao YQ, Huang J, Wang Y, Wu SH, Zhang SM, Huang WP
1732 - 1739	A numerical Schrodinger-Poisson solver for radially symmetric nanowire core-shell structures Wang LQ, Wang DL, Asbeck PM
1740 - 1743	On gate leakage current partition for MOSFET compact model Hu J, Xi XM, Niknejad A, Hu CM
1744 - 1747	High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate Zhou Y, Wang D, Ahyi C, Tin CC, Williams J, Park M, Williams NM, Hanser A
1748 - 1755	On the geometrical dependence of low-frequency noise in SiGeHBTs Zhao EH, Cressler JD, El-Diwany M, Krakowski TL, Sadovnikov A, Kocoski D
1756 - 1760	First-principle study of ferroelectricity in PbTiO3/SrTiO3 superlattices Zhu ZY, Wang B, Wang H, Zheng Y, Li QK
1761 - 1766	Temperature dependence of a slow component of excess carrier decay curves Ichimura M
1767 - 1773	Numerical analysis of void-induced thermal effects on GaAs/AlxGa1-xAs high power single-quantum-well laser diodes Gity F, Ahmadi V, Noshiravani M
1774 - 1779	Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices Ho CS, Lo YC, Chang YH, Liou JJ
1780 - 1786	Scalable and multibias high frequency modeling of multi-fin FETs Crupi G, Schreurs D, Parvais B, Caddemi A, Mercha A, Decoutere S
1787 - 1795	A voltage-dependent channel length extraction method for MOSFET's Joodaki M
1796 - 1800	Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current Ortiz-Conde A, Sanchez FJG
1801 - 1813	Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, Desoete B, Frere S, Desormeaux AB, Sharma A, Declercq M, Ionescu AM
1814 - 1821	An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs Sarkar V, Dutta AK
1822 - 1827	Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications Moussa MS, Pavageau C, Lederer D, Picheta L, Danneville F, Fel N, Russat J, Raskin JP, Vanhoenacker-Janvier D
1828 - 1834	CCD image sensor with compensated reset operation Park S, Uh HS, Park S
1835 - 1837	Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure Kumar S, Katharria YS, Kumar S, Kanjilal D
1838 - 1838	Benchmark test on surface potential based charge-sheet model (vol 50, pg 263, 2006) He J, Zhang X, Zhang GG, Wang YY