Solid-State Electronics

Solid-State Electronics, Vol.44, No.12 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

2097 - 2100	npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions Dang G, Luo B, Zhang AP, Cao XA, Ren F, Pearton SJ, Cho H, Hobson WS, Lopata J, van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ
2101 - 2108	The effect of N-2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics Trivedi VP, Hsu CH, Luo B, Cao X, LoRache JR, Ren F, Pearton SJ, Abernathy CR, Lambers E, Hoppe M, Wu CS, Sasserath J, Lee JW, Mackenzie K
2109 - 2116	An analytical model for punch-through limited breakdown voltage of planar junction with multiple floating field limiting rings Bae DG, Chung SK
2117 - 2122	Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors LaRoche JR, Ren F, Temple D, Pearton SJ, Kuo JM, Baca AG, Cheng P, Park YD, Hudspeth Q, Hebard AF, Arnason SB
2123 - 2129	Effects of distance between wells on band structure and characteristics of InGaAs/InGaAsP strain-compensated multiple quantum well lasers Ma CS, Wang LJ, Liu SY
2131 - 2138	Optimization of vertical 600 and 1500 VSOI-ESTs with low on-state voltages Steck B, Vogt H
2139 - 2146	Temperature-dependence of steady-state characteristics of SCR-type ESD protection circuits Jang SL, Lin JK
2147 - 2153	The time-frequency analysis approach of electric noise based on the wavelet transform Dai YS
2155 - 2159	Turn-off operation of a MOS-gate 2.6 kV 4H-SiC gate turn-off thyristor Ivanov PA, Levinshtein ME, Rumyantsev SL, Agarwal AK, Palmour JW
2161 - 2164	Optical response of planar Mo/n-Si/Mo structures with long neutral region and Schottky barriers at both ends Takano H, Kimura M, Ando T, Niemcharoen S, Yasumura Y, Sato K
2165 - 2170	Design optimization of stacked layer dielectrics for minimum gate leakage currents Zhang J, Yuan JS, Ma Y, Oates AS
2171 - 2176	Equivalent junction transformation: a semi-empirical analytical method for predicting the breakdown characteristics of cylindrical- and spherical-abrupt PN junctions He J, Zhang X, Huang R, Wang YY
2177 - 2182	Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy Tang H, Webb JB, Bardwell JA, Rolfe S, MacElwee T
2183 - 2191	An analysis of process fluctuation induced propagation delay variation using analytical model Shigyo N
2193 - 2198	The effect of hydrostatic pressure on the electronic and optical properties of InP Bouarissa N
2199 - 2205	Modeling of the body current in a Bi-MOS hybrid-mode environment Yeo KS, Seah SHL, Ma JG, Do MA
2207 - 2212	A silicon quantum wire transistor with one-dimensional subband effects Je M, Han S, Kim I, Shin H
2213 - 2216	Estimation for the capture cross-sections of surface state on p-Si surface by photovoltaic method Yan YM
2217 - 2223	Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction Zhu SY, Qu XP, Van Meirhaeghe RL, Detavernier C, Ru GP, Cardon F, Li BZ
2225 - 2232	Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy Yun F, Reshchikov MA, Jones K, Visconti P, Morkoc H, Park SS, Lee KY
2233 - 2237	A new way for measuring the apparent band gap narrowing in bipolar transistors Haiyan J, Lichun Z
2239 - 2246	Simulation study of high injection effects and parasitic barrier formation in SiGeHBTs operating at high current densities Mushini P, Roenker KP
2247 - 2252	Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells? Berg J, Bengtsson S, Lundgren P
2253 - 2257	Analytical expression for ion-implanted impurity concentration profiles Suzuki K, Sudo R
2259 - 2264	Self-aligned silicon-on-insulator nano flash memory device Tang X, Baie X, Colinge JP, Crahay A, Katschmarsyj B, Scheuren V, Spote D, Reckinger N, Van de Wiele F, Bayot V
2265 - 2271	Simulation study of the DC and AC characteristics of an a-Si : H(n)/GaAs(p)/CaAs(n) heterojunction bipolar transistor Della Corte FG