Solid-State Electronics
Solid-State Electronics, Vol.53, No.12 Entire volume, number list
ISSN: 0038-1101 (Print)
In this Issue (18 articles)
| 1211 - 1211 |
PAPERS SELECTED FROM THE ULTIMATE INTEGRATION ON SILICON CONFERENCE 2009, ULIS 2009 Foreword Lemme MC, Mantl S |
| 1212 - 1219 |
Advanced SOI CMOS transistor technology for high performance microprocessors Horstmann M, Wiatr M, Wei A, Hoentschel J, Feudel T, Scheiper T, Stephan R, Gerhadt M, Krugel S, Raab M |
| 1220 - 1226 |
Plastic circuits and tags for 13.56 MHz radio-frequency communication Myny K, Steudel S, Vicca P, Beenhakkers MJ, van Aerle NAJM, Gelinck GH, Genoe J, Dehaene W, Heremans P |
| 1227 - 1241 |
Computing based on the physics of nano devices-A beyond-CMOS approach to human-like intelligent systems Shibata T |
| 1242 - 1245 |
A Haynes-Shockley experiment for spin-polarized electron transport in silicon Appelbaum I |
| 1246 - 1251 |
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz H |
| 1252 - 1256 |
Improved effective mobility extraction in MOSFETs Thomas SM, Whall TE, Parker EHC, Leadley DR, Lander RJP, Vellianitis G, Watling JR |
| 1257 - 1262 |
Silicon nanowire FETs with uniaxial tensile strain Feste SF, Knoch J, Habicht S, Buca D, Zhao QT, Mantl S |
| 1263 - 1267 |
DC and low frequency noise characterization of FinFET devices Bennamane K, Boutchacha T, Ghibaudo G, Mouis M, Collaert N |
| 1268 - 1272 |
Investigation of 1/f noise in germanium-on-insulator 0.12 mu m PMOS transistors from weak to strong inversion Gyani J, Valenza M, Soliveres S, Martinez F, Le Royer C, Augendre E, Romanjek K, Drazek C |
| 1273 - 1279 |
Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3 Lucovsky G, Chung KB, Miotti L, Bastos KP, Amado C, Schlom D |
| 1280 - 1286 |
Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs Hubert A, Bawedin M, Cristoloveanu S, Ernst T |
| 1287 - 1292 |
High density 3D memory architecture based on the resistive switching effect Kuegeler C, Meier M, Rosezin R, Gilles S, Waser R |
| 1293 - 1302 |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs Palestri P, Alexander C, Asenov A, Aubry-Fortuna V, Baccarani G, Bournel A, Braccioli M, Cheng B, Dollfus P, Esposito A, Esseni D, Fenouillet-Beranger C, Fiegna C, Fiori G, Ghetti A, Iannaccone G, Martinez A, Majkusiak B, Monfray S, Peikert V, Reggiani S, Riddet C, Saint-Martin J, Sangiorgi E, Schenk A, Selmi L, Silvestri L, Toniutti P, Walczak J |
| 1303 - 1312 |
Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins Baravelli E, De Marchi L, Speciale N |
| 1313 - 1317 |
Non-metallic effects in silicided gate MOSFETs Rodriguez N, Gamiz F, Clerc R, Sampedro C, Godoy A, Ghibaudo G |
| 1318 - 1324 |
Impact ionization rates for strained Si and SiGe Dinh TV, Jungemann C |
| 1325 - 1333 |
Modeling and validation of piezoresistive coefficients in Si hole inversion layers Pham AT, Jungemann C, Meinerzhagen B |