Solid-State Electronics

Solid-State Electronics, Vol.52, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

171 - 174	Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes Parish G, Kennedy RA, Umana-Membreno GA, Nener BD
175 - 178	Multiple-input NOR logic design using negative differential resistance circuits implemented by standard SiGe process Gan KJ, Tsai CS, Liang DS, Tu CD, Chen YH
179 - 181	Influence of the polymer dielectric characteristics on the performance of pentacene organic field-effect transistors Unni KNN, Dabos-Seignon S, Pandey AK, Nunzi JM
182 - 185	Field effect transistor as ultrafast detector of modulated terahertz radiation Kachorovskii VY, Shur MS
186 - 189	Modeling the effects of the channel electron velocity on the channel surface potential of ballistic MOSFETs Mao LF
190 - 195	Extraction of series resistance using physical mobility and current models for MOSFETs Katto H
196 - 204	An area efficient body contact for low and high voltage SOI MOSFET devices Daghighi A, Osman M, Imam MA
205 - 210	Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process Ali A, Shah NA, Maqsood A
211 - 214	High-efficiency red phosphorescent organic light-emitting diodes based on metal-microcavity structure Sun XY, Li WL, Xu ML, Chu B, Bi DF, Li B, Hu YW, Zhang ZQ, Hu ZZ
215 - 220	Temperature effect of metal-oxide-semiconductor field-effect-transistors' gate current evaluated with the mask dimensions Yeh CC, Neih CF, Chen YY, Gong J
221 - 226	Dynamic response of QWS-DFB lasers with convex tapered grating structure and non-zero facet reflection Bazhdanzadeh N, Ahmadi V, Ghafoorifard H, Shahshahani F
227 - 232	650 nm resonant-cavity light-emitting diodes with dielectric distributed Bragg reflectors Lei PH, Yang CD
233 - 238	An ultra-low power CMOS random number generator Zhou SH, Zhang W, Wu NJ
239 - 244	High performance SiGe HBT power unit-cell for S-Band open collector adaptive bias power amplifier design Chiou HK, Yeh PC, Lin KC
245 - 248	Optical and electrochemical properties of nanosized CuO via thermal decomposition of copper oxalate Zhang XJ, Zhang DG, Ni XM, Zheng HG
249 - 254	Method of controlling spontaneous emission from porous silicon fabricated using pulsed current etching Ali NK, Hashim MR, Aziz AA, Hamammu I
255 - 258	Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress Samanta P
259 - 263	Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations Gong JF, Chan PCH
264 - 268	On the recovery of interface state in pMOSFETs subjected to NBTI and SHI stress Wang YG
269 - 274	Quasi-static capacitance-voltage characterizations of carrier accumulation and depletion phenomena in pentacene thin film transistors Chen YM, Lin CF, Lee JH, Huang JJ
275 - 281	An efficient channel segmentation approach for a large-signal NQS MOSFET model Bucher M, Bazigos A
282 - 288	An explicit surface-potential-based model for undoped double-gate MOSFETs Gong JF, Chan PCH, Chan MS
289 - 293	Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation Huang JJ, Chou DW, Sze PW, Wang YH
294 - 298	High field emission enhancement of ZnO-nanorods via hydrothermal synthesis Chen J, Lei W, Chai WQ, Zhang ZC, Li C, Zhang XB
299 - 304	A new analytical compact model for two-dimensional finger photodiodes Naeve T, Hohenbild M, Seegebrecht P
305 - 311	An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET Kaur H, Kabra S, Haldar S, Gupta RS
312 - 322	Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55 mu m Abedi K, Ahmadi V, Darabi E, Farshi MKM, Sheikhi MH
323 - 337	The physical origins of mismatch in Si/SiGe : C heterojunction bipolar transistors for BiCMOS technologies Danaie S, Marin M, Ghibaudo G
338 - 340	Current instability and single-mode THz generation in ungated two-dimensional electron gas Cheremisin MV, Samsonidze GG