Solid-State Electronics

Solid-State Electronics, Vol.47, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (37 articles)

385 - 385	Proceedings of Symposium M of the 2002 E-MRS Spring Meeting - Preface Chen WMM, O'Reilly EP, Forchel A
387 - 394	InSb1-xNx growth and devices Ashley T, Burke TM, Pryce GJ, Adams AR, Andreev A, Murdin BN, O'Reilly EP, Pidgeon CR
395 - 398	Interest of the {111} orientation for GaAsN and GaInAsN/GaAs quantum wells grown by molecular beam epitaxy Blanc S, Arnoult A, Carrere H, Fontaine C
399 - 405	Properties of 1.3 mu m InGaNAs laser material grown by MBE using a N-2/Ar RF plasma Gupta JA, Barrios PJ, Aers GC, Williams RL, Ramsey J, Wasilewski ZR
407 - 412	Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs Bullough TJ, Davies S, Thomas S, Joyce TB, Chalker PR
413 - 418	Influence of preparation parameters for low-energy ion beam nitridation of III-V semiconductor surfaces Hecht JD, Frost F, Sidorenko A, Hirsch D, Neumann H, Schindler A, Krasnikow S, Zhang L, Chasse T
419 - 423	Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 mu m laser diodes Carrere H, Arnoult A, Ricard A, Marie X, Amand T, Bedel-Pereira E
425 - 429	Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well White SL, Thomas S, Joyce TB, Bullough TJ, Chalker PR, Noakes TCQ, Bailey P, Mazzucato S, Balkan N
431 - 435	Diffusion at the interfaces of InGaNAs/GaAs quantum wells Peng CS, Pavelescu EM, Jouhti T, Konttinen J, Pessa M
437 - 441	Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells Klar PJ, Gruning H, Heimbrodt W, Koch J, Stolz W, Tomic S, O'Reilly EP
443 - 446	Derivation of a 10-band k center dot p model for dilute nitride semiconductors Lindsay A, Tomic S, O'Reilly EP
447 - 453	Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures Polimeni A, Bissiri M, von Hogersthal GBH, Capizzi M, Giubertoni D, Barozzi M, Bersani M, Gollub D, Fischer M, Forchel A
455 - 460	LO phonon-plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys Tite T, Pages O, Ajjoun M, Laurenti JP, Bormann D, Tournie E, Maksimov O, Tamargo MC
461 - 465	Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy Wagner J, Geppert T, Kohler K, Ganser P, Maier M
467 - 475	Recombination processes in N-containing III-V ternary alloys Buyanova IA, Chen WM, Tu CW
477 - 482	Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 mu m Pinault MA, Tournie E
483 - 487	Optical properties of GaInNAs/GaAs quantum wells Mazzucato S, Erol A, Potter RJ, Balkan N, Chalker PR, Thomas S, Joyce TB, Bullough TJ
489 - 492	Optical investigations of InGaAsN/GaAs single quantum well structures Sitarek P, Ryczko K, Sek G, Misiewicz J, Fischer M, Reinhardt M, Forchel A
493 - 496	Temperature behavior of the GaNP band gap energy Rudko GY, Buyanova IA, Chen WM, Xin HP, Tu CW
497 - 500	Lattice distortions effect on exciton bound to nitrogen in GaP-rich A(3)B(5) alloys Parfenova II
501 - 506	Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers Fehse R, Adams AR, Sweeney SJ, Tomic S, Reichart H, Ramakrishnan A
507 - 512	Enhanced optical and structural properties of strain-compensated 1.3-mu m GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers Pavelescu EM, Peng CS, Jouhti T, Konttinen J, Dumitrescu M, Li W, Pessa M
513 - 521	Microscopic theory of gain and spontaneous emission in GaInNAs laser material Hader J, Koch SW, Moloney JV
523 - 527	Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN(1-x)P(x)SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition Kikawa J, Yoshida S, Itoh Y
529 - 531	Er diffusion into gallium nitride Chen CC, Ting YS, Lee CC, Chi GC, Chakraborty P, Chini T, Chuang HW, Tsang JS, Kuo CT, Tsai WC, Chen SH, Chyi JI
533 - 537	Pulsed laser deposition of manganese doped GaN thin films O'Mahony D, Lunney JG, Tobin G, McGlynn E
539 - 542	Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy Kim H, Andersson TG, Chauveau JM, Trampert A
543 - 548	Hunting for a single-source precursor: toward stoichiometry controlled CVD of 13-15 composites Timoshkin AY
549 - 552	A study of GaN etching characteristics using HBr-based inductively coupled plasmas Kim DW, Jeong CH, Lee HY, Kim HS, Sung YJ, Yeom GY
553 - 557	Microstructure of planar defects and their interactions in wurtzite GaN films Kioseoglou J, Komninou P, Dimitrakopulos GP, Kehagias T, Polatoglou HM, Nouet G, Karakostas T
559 - 563	Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma Sanguino P, Niehus M, Melo LV, Schwarz R, Koynov S, Monteiro T, Soares J, Alves H, Meyer BK
565 - 568	Study of inversion domain pyramids formed during the GaN : Mg growth Martinez-Criado G, Cros A, Cantarero A, Joshi NV, Ambacher O, Stutzmann M
569 - 573	Optical properties and transport in PLD-GaN Niehus M, Sanguino P, Monteiro T, Soares MJ, Pereira E, Vieira M, Koynov S, Schwarz R
575 - 578	Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures Chen CC, Hsueh TH, Ting YS, Chi GC, Chang CA, Wang SC
579 - 581	Photoluminescence of GaN layers studied with two-color spectroscopy Wojak M, Klik MAJ, Forcales M, Gregorkiewicz T, Wells JPR, Pakula K, Baranowski JM, Porowski S
583 - 587	Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN hetero structures Sukach GA, Smertenko PS, Shepel LG, Ciach R, Kuzma M
589 - 592	A high-power AlGaN/GaN heterojunction field-effect transistor Yoshida S, Ishii H, Li J, Wang DL, Ichikawa M