Solid-State Electronics

Solid-State Electronics, Vol.50, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (35 articles)

301 - 308	A compact and accurate MOSFET model with simple expressions for linear, saturation and sub-threshold regions Katto H
309 - 315	Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory Wu MY, Dai SH, Lee KH, Hu SF, King YC
316 - 321	Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer Kikuta D, Ao JP, Ohno Y
322 - 326	Thin film Lamb wave resonant structures - The first approach Bjurstrom J, Yantchev V, Katardjiev I
327 - 332	Analytical model for base transit time of a bipolar transistor with Gaussian-doped base Hassan MMS, Rahman T, Khan MZR
333 - 339	Characterization of silicon-germanium heterojunction bipolar transistors degradation in silicon-germanium BiCMOS technologies Lee SY, Park CW
340 - 344	Noise spectroscopy of localized states in Au/n-GaAs Schottky diodes containing InAs quantum dots Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Kamarinos G, Frigeri P, Franchi S, Gombia E, Mosca R
345 - 354	An analysis of the factors affecting the alpha parameter used for extracting surface recombination velocity in EBIC measurements Kurniawan O, Ong VKS
355 - 361	Transport mechanisms and photovoltaic characteristics of p-SxSe100-x/n-Si heterojunctions El-Nahass MM, El-Sayed HEA, El-Barry AMA
362 - 366	Transient processes in a Ge/Si hetero-nanocrystal p-channel memory Zhao DT, Zhu Y, Li RG, Liu JL
367 - 371	Observation of negative capacitance in a-SiC : H/a-Si : H UV photodetectors Gharbi R, Abdelkrim M, Fathallah M, Tresso E, Ferrero S, Pirri CF, Brahim TM
372 - 377	Study of surface-trap-induced gate depletion region of field-modulating plate GaAs-FETs Wakejima A, Ota K, Matsunaga K
378 - 383	Analysis of Schottky barrier source-gated transistors in a-Si : H Balon F, Shannon JM
384 - 387	DC characterization of 4H-SiC depletion mode MOS field effect transistor Zhao P, Rusli, Zhu CL, Wang H, Tin CC
388 - 398	Physics-based modeling and characterization for silicon carbide power diodes McNutt TR, Hefner AR, Mantooth HA, Duliere JL, Berning DW, Singh R
399 - 407	Implementation of a scalable VBIC model for SiGe : C HBTs Chakravorty A, Scholz RF, Knoll D, Fox A, Senapati B, Maiti CK
408 - 411	Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique Kim J, Freitas JA, Mittereder J, Fitch R, Kang BS, Pearton SJ, Ren F
412 - 415	Optimum bias of power transistor in 0.18 mu m CMOS technology for Bluetooth application Hsu HM, Lee TH
416 - 421	A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs He J, Zhang X, Zhang GG, Chan MS, Wang YY
422 - 428	A new model for four-terminal junction field-effect transistors Ding H, Liou JJ, Green K, Cirba CR
429 - 432	Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures Robinson JA, Mohney SE, Boos JB, Tinkham BP, Bennett BR
433 - 436	New contact resistivity characterization method for non-uniform ohmic contacts on GaN Jang T, Kwak JS, Nam OH, Park Y
437 - 447	Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations Kranti A, Armstrong GA
448 - 455	Analytical model of drain current of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex NMOSFETs and PMOSFETs for circuit simulation Bindu B, DasGupta N, DasGupta A
456 - 459	An analytical model of Monte Carlo electron scattering in ZnS He QF, Xu Z, Liu DA, Xu XR
460 - 467	Amorphous silicon carbide TFTs Estrada M, Cerdeira A, Resendiz L, Garcia R, Iniguez B, Marsal LF, Pallares J
468 - 472	Investigation of InP/InGaAs pnp delta-doped heterojunction bipolar transistor with extremely low offset voltage Tsai JH, Kang YC, Hsu IH, Weng TY
473 - 479	Numerical analysis of an optoelectronic integrated device composed of coupled periodic MQW phototransistor and strained-QW laser diode Darabi E, Ahmadi V, Mirabbaszadeh K
480 - 488	Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors Zhang B, Chen WJ, Yi K, Li ZJ
489 - 495	An improved substrate current model for ultra-thin gate oxide MOSFETs Yang LA, Hao Y, Yu CL, Han FY
496 - 499	Modelling of strained-Si/SiGe NMOS transistors including DC self-heating Jankovic ND, Pesic TV, O'Neill A
500 - 503	Transparent ring oscillator based on indium gallium oxide thin-film transistors Presley RE, Hong D, Chiang HQ, Hung CM, Hoffman RL, Wager JF
504 - 507	One-step hydrothermal synthesis and gas sensing property of ZnSnO3 microparticles Xu JQ, Jia XH, Lou XD, Shen JN
508 - 510	The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes Da XL, Guo X, Dong LM, Song YP, Ai WW, Shen GD
511 - 513	High temperature performance of AlGaN/GaN HEMTs on Si substrates Tan WS, Uren MJ, Fry PW, Houston PA, Balmer RS, Martin T