Solid-State Electronics

Solid-State Electronics, Vol.48, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

627 - 632	Mesostructured SnO2 as sensing material for gas sensors Wang Y, Wu XH, Li YF, Zhou ZL
633 - 640	Red hybrid organic light-emitting device fabricated with molecularly doped polyimide thin film containing hole-transporting nanoparticles Kim YK, Lim HT, Ha CS
641 - 654	Influence of magnetic field on 1/f noise and thermal noise in multi-terminal homogeneous semiconductor resistors and discrimination between the number fluctuation model and the mobility fluctuation model for 1/f noise in bulk semiconductors Kim YS, Yun SS, Park CH, Min HS, Park YJ
655 - 667	Study of improved reverse recovery in power transistor incorporating universal contact Anand RS, Mazhari B, Narain J
669 - 674	Extrinsic parameter extraction and RF modelling of CMOS Alam MS, Armstrong GA
675 - 681	Gate capacitance characteristics of a poly-Si thin film transistor Bindra S, Haldar S, Gupta RS
683 - 688	Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates Medjdoub F, Dessenne F, Thobel JL, Zaknoune M, Theron D
689 - 695	Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal Miura N, Nanjo T, Suita M, Oishi T, Abe Y, Ozeki T, Ishikawa H, Egawa T, Jimbo T
697 - 704	Impact of metallisation on resistor matching in a 0.35 mu m analogue CMOS process Lowe A
705 - 714	The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages Bauer FD
715 - 719	A theoretical study on stress sensitive differential amplifier (SSDA) Li JJ, Yue RF, Liu LT
721 - 729	Quantifying hole mobility degradation in pMOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack Persson S, Wu D, Hellstrom PE, Zhang SL, Ostling M
731 - 737	Impact of oxide damage on the light emission properties of MOS tunnel structures Asli N, Shulekin AF, Yoder PD, Vexler MI, Grekhov IV, Seegebrecht P
739 - 745	Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates Henschel W, Wahlbrink T, Georgiev YM, Lemme M, Mollenhauer T, Vratzov B, Fuchs A, Kurz H, Kittler M, Schwierz F
747 - 758	Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs Lukyanchikova N, Garbar N, Smolanka A, Simoen E, Mercha A, Claeys C
759 - 763	Thermal noise in RF CMOS mixers Tong KY, Ma BK, Yuen HT
765 - 772	Hot carrier quasi-ballistic transport in semiconductor devices Childs PA, Dyke DW
773 - 779	A physics based model for accumulation MOS capacitors Otin A, Celma S, Aldea C
781 - 787	Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model Pregaldiny F, Lallement C, Mathiot D
789 - 797	Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors Ankarcrona J, Eklund KH, Vestling L, Olsson J
799 - 805	Analytical models for the surface potential and electrical field distribution of bulk-silicon RESURF devices Sun WF, Shi LX
807 - 811	Steady-state and transient characteristics of 10 kV 4H-SiC diodes Levinshtein ME, Mnatsakanov TT, Ivanov PA, Singh R, Palmour JW, Yurkov SN
813 - 825	Noise modeling in fully depleted SOI MOSFETs Pailloncy G, Iniguez B, Dambrine G, Raskin JP, Danneville F
827 - 830	Si+ ion implanted MPS bulk GaN diodes Irokawa Y, Kim J, Ren F, Baik KH, Gila BP, Abernathy CR, Pearton SJ, Pan CC, Chen GT, Chyi JI, Park SS
831 - 836	The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler-Nordheim tunneling Goldman EI, Kukharskaya NF, Zhdan AG
837 - 840	SiGe resonance phase transistor: active transistor operation beyond the transit frequency f(T) Kasper E, Eberhardt J, Jorke H, Luy JF, Kibbel H, Dashiell MW, Schmidt OG, Stoffel M
841 - 844	A fast experimental method to measure the current-voltage characteristics of metal/semiconductor interfaces Centurioni E
845 - 849	Comparative I(V) study of pure Schottky contacts used in spin-LEDs Bobo JF, Couderc S, Arnoult A, Fontaine C, Mamy R
851 - 854	Gateless AlGaN/GaN HEMT response to block co-polymers Kang BS, Louche G, Duran RS, Gnanou Y, Pearton SJ, Ren F