Solid-State Electronics

Solid-State Electronics, Vol.50, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

723 - 726	H2S sensitivity study of polypyrrole/WO3 materials Geng LN, Huang XL, Zhao YQ, Li P, Wang SR, Zhang SM, Wu SH
727 - 732	Hot-carrier aging of NMOST in analog circuits with large periodic drain signal Habas P
733 - 740	Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law Yu D, Lee K, Choi K, Kim B, Zhu H, Vargason K, Kuo JM, Pinsukanjana P, Kao YC
741 - 749	Simulation of GaN and AlGaN static induction transistors Alptekin E, Aktas O
750 - 753	Hornoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers Lin TK, Chang SJ, Chiou YZ, Wang CK, Chang SP, Lam KT, Sun YS, Huang BR
754 - 757	CONTUNT: Thin SOI control tunneling transistor Dobrovolsky V, Rossokhaty V, Cristoloveanu S
758 - 762	Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates Jang JH, Kim S, Adesida I
763 - 768	High-pressure band parameters for GaAs: first principles calculations Saib S, Bouarissa N
769 - 773	On the saturation mechanism in the Ge nanocrystals-based non-volatile memory Kanoun M, Busseret C, Baron T, Souifi A
774 - 783	The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance Lim TC, Armstrong GA
784 - 787	Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors Hoffman RL
788 - 794	Degradation of current drivability of Schottky barrier source/drain transistors induced by high-k gate dielectrics and possible measures to suppress the phenomenon Ono M, Nishiyama A, Koyama M
795 - 799	Electrical characteristics of single-silicon TFT structure with symmetric dual-gate for kink-effect suppression Sung MY, Lee DY, Ryu JW, Kang EG
800 - 804	Growth temperature effect on field emission properties of printable carbon nanotubes cathode Wang LL, Sun Z, Chen T, Que WX
805 - 812	Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET Abd-Elhamid H, Iniguez B, Jimenez D, Roig J, Pallares J, Marsal LF
813 - 820	Analysis and characterization of the injection efficiency tuning IGBT Zhang F, Shi LN, Zhang L, Li CF, Wang W, Yu W, Sun XW
821 - 825	A novel method of electrical characterization of a semiconductor diode at forward bias Zhu CY, Wang CD, Feng LF, Zhang GY, Yu LS, Shen J
826 - 842	RF and noise performance of double gate and single gate SOI Lazaro A, Iniguez B
843 - 847	Reeves's circular transmission line model and its scope of application to extract specific contact resistance Xu C, Wang JY, Wang MJ, Jin HY, Hao YL, Wen CP
848 - 852	Nanometer size periodic domain inversion in LiNbO3 substrate using circular form full cover electrodes Minakata M, Islam MS, Nagano S, Yoneyama S, Sugiyama T, Awano H
853 - 857	Efficient optimization of InGaAs and SiGe RF HBTs with a mixed-mode genetic-algorithm technique Tseng HC
858 - 864	Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology Malmkvist M, Mellberg A, Rorsman N, Zirath H, Grahn J
865 - 876	Sensors and actuators based on SOI materials Sanz-Velasco A, Nafari A, Rodjegard H, Bring M, Hedsten K, Enoksson P, Bengtsson S
877 - 888	Thermally induced current bifurcation in bipolar transistors La Spina L, Nenadovic N, d'Alessandro V, Tamigi F, Rinaldi N, Nanver LK, Slotboom JW
889 - 896	Analysis and design of Si terahertz transit-time diodes Bi XC, East JR, Ravaioli U, Haddad GI
897 - 900	A novel 50 nm vertical MOSFET with a dielectric pocket Jayanarayanan SK, Dey S, Donnelly JP, Banerjee SK