Solid-State Electronics

Solid-State Electronics, Vol.51, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

639 - 643	All-organic electrochemical devices based on a tetracyanoquinodimethane complex Arena A, Donato N, Saitta G, Pioggia G, Rizzo G
644 - 649	Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques Sarpatwar K, Passmore L, Suliman SA, Awadelkarim OO
650 - 654	Direct tunneling effective mass of electrons determined by intrinsic charge-up process Konig D, Rennau M, Henker M
655 - 661	Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications Moldovan O, Cerdeira A, Jimenez D, Raskin JP, Kilchytska V, Flandre D, Collaert N, Iniguez B
662 - 666	Study of a novel Si/SiC hetero-junction MOSFET Chen L, Guy OJ, Jennings MR, Igic P, Wilks SP, Mawby PA
667 - 673	Simulation study of the noise figure of nanometer-gate nMOS transistors near the scaling limit Cai M, Liu M, Taur Y
674 - 677	Enhanced output of flip-chip light-emitting diodes with a sidewall reflector Zhu YX, Xu C, Da XL, Liang T, Zhang JM, Shen GD
678 - 682	The influence of microstructure on optical properties of porous silicon Zhao Y, Li DS, Sang WB, Yang DR, Jiang MH
683 - 690	Optimized parameter extraction using fuzzy logic Picos R, Calvo O, Iniguez B, Garcia-Moreno E, Garcia R, Estrada M
691 - 702	Electrothermal simulation of SOICMOS analog integrated circuits Yu FX, Cheng MC
703 - 707	Improvement of sub-threshold current models for a-SM thin-film transistors Wang LJ, Zhu J, Liu CL, Liu GJ, Shao XB, Yan DH
708 - 713	Computationally efficient method for scattering device simulation in nanoscale MOSFETs Iwata H, Matsuda T, Ohzone T
714 - 718	High injection regime of the super barrier (TM) rectifier Rodov V, Ankudinov AL, Ghosh P
719 - 725	All injection level power PiN diode model including temperature dependence Jankovic N, Pesic T, Igic P
726 - 731	1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors Hatzopoulos AT, Arpatzanis N, Tassis DH, Dimitriadis CA, Templier F, Oudwan M, Kamarinos G
732 - 738	Recessed channel and/or buried source/drain structures for improvement in performance of Schottky barrier source/drain transistors with high-k gate dielectrics Ono M, Koyama M, Nishiyama A
739 - 748	Self-consistent 2D compact modeling of nanoscale bulk MOSFETs Kloes A, Weidemann M
749 - 756	A novel 3D embedded gate field effect transistor - Screen-grid FET -Device concept and modelling Fobelets K, Ding PW, Velazquez-Perez JE
757 - 761	Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film Liu KW, Ma JG, Zhang JY, Lu YM, Jiang DY, Li BH, Zhao DX, Zhang ZZ, Yao B, Shen DZ
762 - 770	Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide Kailath BJ, DasGupta A, DasGupta N
771 - 777	Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von Haartman M, Malm BG, Hellstrom PE, Ostling M, Grasby TJ, Whall TE, Parker EHC, Lyutovich K, Oehme M, Kasper E
778 - 783	A new extraction method of poly-Si TFT model parameters in the leakage region Wu WJ, Yao RH, Zheng XR, Deng WL, Ou XP
784 - 787	250 degrees C operation normally-off GaN MOSFETs Niiyama Y, Kambayashi H, Ootomo S, Nomura T, Yoshida S
788 - 792	Field electron emission of double walled carbon nanotube film prepared by drop casting method Somani PR, Somani SP, Lau SP, Flahaut E, Tanemura M, Umeno M
793 - 796	Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching Leem DS, Lee T, Seong TY
797 - 801	Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC Jennings MR, Perez-Tomas A, Davies M, Walker D, Zhu L, Losee P, Huang W, Balachandran S, Guy OJ, Covington JA, Chow TP, Mawby PA
802 - 805	Analytic channel potential solution to the undoped surrounding-gate MOSFETs He J, Tao YD, Liu F, Feng J, Yang SQ
806 - 811	Modeling of retention characteristics for metal and semiconductor nanocrystal memories Guan WH, Long SB, Liu M, Liu Q, Hu Y, Li ZG, Jia R
812 - 815	Granular semiconductor/pyroelectric media as a tunable plasmonic crystal Dmitriev AP, Kachorovskii VY, Shur MS
816 - 816	An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration (vol 51, pg 179, 2007) He J, Bian W, Tao YD, Liu F, Lu KL, Wu W, Wang T, Chan MS