Solid-State Electronics

Solid-State Electronics, Vol.44, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (35 articles)

887 - 894	A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation Sallese JM, Porret AS
895 - 903	A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current De Salvo B, Ghibaudo G, Pananakakis G, Guillaumot B, Reimbold G
905 - 912	Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation Sallese JM, Bucher M, Lallement C
913 - 916	Grain and grain-boundary control of the transfer characteristics of large-grain polycrystalline silicon thin-film transistors Farmakis FV, Brini J, Kamarinos G, Angelis CT, Dimitriadis CA, Miyasaka M, Ouisse T
917 - 922	Graded-channel fully depleted Silicon-On-Insulator nMOSFET for reducing the parasitic bipolar effects Pavanello MA, Martino JA, Flandre D
923 - 927	The formation of stable ohmic contacts to MBE grown CdTe layers Yousaf M, Sands D, Scott CG
929 - 935	The integration of high-side and low-side LIGBTs on partial silicon-on-insulator Garner DM, Udrea F, Lim HT, Milne WI
937 - 940	Germanium junction field effect transistor for cryogenic applications Das NC, Monroy C, Jhabvala M
941 - 947	Large-signal microwave performance of GaN-based NDR diode oscillators Alekseev E, Pavlidis D
949 - 958	Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures Yang YL, White MH
959 - 962	An accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method Wang JY, Xu MZ, Tan CH
963 - 967	Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors Niel S, Chantre A, Llinares P, Laurens M, Vincent G
969 - 976	Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model Katto H
977 - 980	Stress-induced high-field gate leakage current in ultra-thin gate oxide Wei JL, Mao LF, Xu MZ, Tan CH, Duan XR
981 - 989	Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout Giraldo A, Paccagnella A, Minzoni A
991 - 1000	A Gummel-Poon model for pnp heterojunction bipolar transistors with a compositionally graded base Datta S, Roenker KP, Cahay MM
1001 - 1007	Technology CAD based statistical simulation of MOSFETs Shigyo N, Wakita N, Morishita T, Sugawara K, Asahi Y
1009 - 1012	Circuit model for traveling wave semiconductor laser amplifiers Chen WY, Wang AJ, Zhang YJ, Liu CX, Liu SY
1013 - 1019	Complex random telegraph signals in 0.06 mu m(2) MDD n-MOSFETs Amarasinghe NV, Celik-Butler Z
1021 - 1027	The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter Bollaert S, Cordier Y, Zaknoune M, Happy H, Hoel V, Lepilliet S, Theron D, Cappy A
1029 - 1034	Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor Maikap S, Bera LK, Ray SK, John S, Banerjee SK, Maiti CK
1035 - 1042	A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ca0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor Yoon SF, Kam AHT, Gay BP, Zheng HQ
1043 - 1047	Conditions of ion implantation into thin amorphous Si gate layers for suppressing threshold voltage shift Suzuki K, Sudo R
1049 - 1053	A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena Tsai JH
1055 - 1058	Luminescence of an InGaN/GaN multiple quantum well light-emitting diode Sheu JK, Chi GC, Su YK, Liu CC, Chang CM, Hung WC, Jou MJ
1059 - 1067	Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs Tan CH, Xu MZ, Wang Z
1069 - 1075	Levelized incomplete LU method and its application to semiconductor device simulation Tsai YT, Lee CY, Tsai MK
1077 - 1080	Impact of gate workfunction on device performance at the 50 nm technology node De I, Johri D, Srivastava A, Osburn CM
1081 - 1087	Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors Angelis CT, Dimitriadis CA, Farmakis FV, Brini J, Kamarinos G, Miyasaka M, Stoemenos I
1089 - 1097	Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes Hudait MK, Krupanidhi SB
1099 - 1104	Magnetoelectronic latching Boolean gate Johnson M, Bennett BR, Hammar PR, Miller MM
1105 - 1109	Verification of overlap and fringing capacitance models for MOSFETs Wakita N, Shigyo N
1111 - 1116	Characteristics of an epitaxial Schottky barrier diode for all levels of injection Hassan MMS
1117 - 1119	Hot carrier reliability characteristics of a bend-gate MOSFET Lee W, Hwang H
1121 - 1125	Channel and well design of quarter-micron high performance retrograde well pMOSFETs Toe-Naing S, Kiat-Seng Y