Solid-State Electronics

Solid-State Electronics, Vol.46, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (21 articles)

777 - 783	Evaluation of rapid thermal processing systems for use in CMOS fabrication Trivedi V, Pearton SJ
785 - 789	Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors Shamir N, Ritter D, Cytermann C
791 - 795	Response surface methodology applied to silicon trench etching in Cl-2/HBr/O-2 using transformer coupled plasma technique Hung CC, Lin HC, Shih HC
797 - 801	Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors Baca AG, Monier C, Chang PC, Briggs RD, Armendariz MG, Pearton SJ
803 - 806	Influence of SiO2PECVD layers on p-GaN rectifiers Baik KH, Luo B, Pearton SJ, Ren F
807 - 817	On-voltage analysis of a forward-biased pn-junction: an interconnect model for CMOS device simulation Yamaguchi K
819 - 826	Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models Walkey DJ, Smy TJ, Macelwee T, Maliepaard M
827 - 835	The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions Danielsson E, Zetterling CM, Ostling M, Linthicum K, Thomson DB, Nam OH, Davis RF
837 - 845	Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench Suliman SA, Awadelkarim OO, Fonash SJ, Ridley RS, Dolny GM, Hao J, Knoedler CM
847 - 851	Optimum design of punch-through junction used in bipolar and unipolar high voltage power devices He J, Zhang X, Wang YY, Xi XM
853 - 857	A physics-based model for the substrate resistance of MOSFETs Gao XF, Liou JJ, Ortiz-Conde A, Bernier J, Croft G
859 - 866	Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes Brody J, Rohatgi A
867 - 876	Doping induced design considerations for InP/In0.53Ga0.47As heterojunction bipolar transistors Mohammad SN
877 - 883	InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy Radhakrishnan K, Yuan K, Zheng HQ
885 - 889	Depletion lengths in semiconductor nanostructures Luscombe JH, Frenzen CL
891 - 901	Determination of parameters of radiation induced traps in silicon Siemieniec R, Sudkamp W, Lutz J
903 - 909	Striped anode engineering: a concept for fast switching power devices Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM, Narayanan EMS
911 - 913	1.6 A GaN Schottky rectifiers on bulk GaN substrates Johnson JW, Lou B, Ren F, Palmer D, Pearton SJ, Park SS, Park YJ, Chyi JI
915 - 923	A hydrodynamic equivalent circuit model for the Gunn diode Kao CH, Chen LW
925 - 932	Dynamic finite element approach for analyzing stress and distortion in multilevel devices Lakhsasi A, Skorek A
933 - 936	GaN pnp bipolar junction transistors operated to 250 degrees C Zhang AP, Dang G, Ren F, Han J, Monier C, Baca AG, Cao XA, Cho H, Abernathy CR, Pearton SJ