Solid-State Electronics

Solid-State Electronics, Vol.47, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

943 - 950	Induced base transit time of an epitaxial n(+)pn(-)n(+) bipolar transistor in saturation Hassan MMS, Rahim AHMA
951 - 955	On the bipolar transistor collector current at the onset of base-widening as a function of the collector-base voltage Karmalkar S
957 - 962	Physical limitation of p-n junction - statistical variations of p-n junction depth in MOSFET array Mizuno T
963 - 968	Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Polyakov AY, Smirnov NB, Govorkov AV, Kim J, Ren F, Overberg ME, Thaler GT, Abernathy CR, Pearton SJ, Lee CM, Chyi JI, Wilson RG, Zavada JM
969 - 974	Influence of layer doping and thickness on predicted performance of NPNAlGaN/GaN HBTs Lee KP, Dabiran A, Chow PP, Pearton SJ, Ren F
975 - 979	Design of junction termination structures for GaN Schottky power rectifiers Baik KH, Irokawa Y, Ren F, Pearton SJ, Park SS, Park YJ
981 - 987	Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Polyakov AY, Smirnov NB, Govorkov AV, Kim J, Ren F, Thaler GT, Overberg ME, Frazier R, Abernathy CR, Pearton SJ, Lee CM, Chyi JI, Wilson RG, Zavada JM
989 - 993	Low capacitance point diodes fabricated with focused ion beam implantation Bischoff L, Schmidt B
995 - 1001	A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages Anil KG, Mahapatra S, Eisele I
1003 - 1008	Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface Shmidt NM, Kolmakov AG, Loskutov AV, Polyakov AY, Smirnov NB, Govorkov AV, Pearton SJ, Osinsky AV
1009 - 1014	Simulations of InGaN-base heterojunction bipolar transistors Lee KP, Ren F, Pearton SJ, Dabiran AM, Chow PP
1015 - 1020	Proton irradiation of MgO- or SC2O3 passivated AlGaN/GaN high electron mobility transistors Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, Via GD, Crespo A, Baca AG, Shul RJ
1021 - 1025	Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor Lay TS, Liao YY, Liu WD, Lai YH, Hung WH, Kwo J, Hong M, Mannaerts JP
1027 - 1030	Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process Kelly F, Gilbert DR, Chodelka R, Singh RK, Pearton S
1031 - 1036	Effects of base structure on performance of GaN-based heterojunction bipolar transistors Lee KP, Ren F, Pearton SJ, Dabiran AM, Chow PP
1037 - 1043	Thermal simulations of high power, bulk GaN rectifiers Mehandru R, Kim S, Kim J, Ren F, Lothian JR, Pearton SJ, Park SS, Park YJ
1045 - 1053	A model for tunneling current in multi-layer tunnel dielectrics Govoreanu B, Blomme P, Rosmeulen M, Van Houdt J, De Meyer K
1055 - 1059	Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature Tsai JH, Zhu KP
1061 - 1067	Experimental results on drain and source on insulator MOSFETs fabricated by local SIMOX technology He P, Jiang B, Lin X, Liu LT, Tian LL, Li ZJ, Dong YM, Chen M, Wang X
1069 - 1073	Hydrogen-sensitive GaN Schottky diodes Kim J, Gila BP, Chung GY, Abernathy CR, Pearton SJ, Ren F
1075 - 1079	Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ
1081 - 1087	GaN films annealed under high pressure Kelly F, Chodelka R, Singh RK, Pearton SJ, Overberg M, Fitz-Gerald J
1089 - 1093	Modeling negative capacitance effect in organic polymers Kwok HL
1095 - 1098	High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications Li PW, Liao WM, Shih CC, Kuo TS, Lai LS, Tseng YT, Tsai MJ
1099 - 1104	Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA
1105 - 1110	An improved electrostatic discharge protection structure for reducing triggering voltage and parasitic capacitance Gao XF, Liou JJ, Wong WS, Vishwanathan S
1111 - 1115	The operation of 0.35 mu m partially depleted SOICMOS technology in extreme environments Li Y, Niu GF, Cressler JD, Patel J, Liu ST, Reed RA, Mojarradi MM, Blalock BJ
1117 - 1122	A 0.18 mu m p-MOSFET large-signal RF model and its application on MMIC design Ho CC, Kuo CW, Hsiao CC, Chan YJ
1123 - 1126	Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes Lin CH, Yuan F, Hsu BC, Liu CW
1127 - 1130	Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter Lee WJ, Fang YK, Chiang HC, Ting SF, Chen SF, Chang WR, Lin CY, Lin TY, Ho JJ