Solid-State Electronics

Solid-State Electronics, Vol.49, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

865 - 870	Hooge noise parameter of epitaxial n-GaN on sapphire Tanuma N, Tacano M, Pavelka J, Hashiguchi S, Sikula J, Matsui T
871 - 877	A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes Banoushi A, Kardan MR, Naeini MA
878 - 883	The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes Leroy WP, Opsomer K, Forment S, Van Meirhaeghe RL
884 - 888	Temperature and field dependent mobility in pentacene-based thin film transistors Zhu M, Liang GR, Cui TH, Varahramyan K
889 - 895	An electron mobility model for wurtzite GaN Schwierz F
896 - 901	Characteristics of 4H-SiC MOS interface annealed in N2O Fujihira K, Tarui Y, Imaizumi M, Ohtsuka K, Takami T, Shiramizu T, Kawase K, Tanimura J, Ozeki T
902 - 906	Electrical properties of spray pyrolytic tin sulfide films Reddy NK, Reddy KTR
907 - 914	Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics von Haartman M, Westlinder J, Wu D, Malm BG, Hellstrom PE, Olsson J, Ostling M
915 - 922	Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMTs Principato F, Caddemi A, Ferrante G
923 - 927	Electron direct tunneling time in heterostructures with nanometer-thick trapezoidal barriers Khairurrijal, Noor FA, Sukirno
928 - 934	On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature Caddemi A, Crupi G, Donato N
935 - 939	Two relaxation mechanisms in (Sr1-1.5xBix)TiO3 (x : 0.0067) Senturk E
940 - 944	Normal distribution of confinement energy from a photoluminescence line shape analysis in oxidized porous silicon Chen SY, Huang YH, Cai BN
945 - 955	Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes Mahajan A, Skromme BJ
956 - 964	Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor Maneux C, Belhaj M, Grandchamp B, Labat N, Touboul A
965 - 975	A numerical study of scaling issues for trench power MOSFETs Roig J, Cortes I, Jimenez D, Flores D, Iniguez B, Hidalgo S, Rebollo J
976 - 980	Modeling MOSFET surface capacitance behavior under non-equilibrium Kapoor A, Jindal RP
981 - 985	High performance InP/InGaAs/InP DHBTs with patterned sub-collector fabricated by elevated temperature N plus implant Chen M, Sokolich M, Chow D, Shi B, Rajavel R, Bui S, Royter Y, Thomas S, Fields C
986 - 990	The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology Haugerud BM, Nayeern MB, Krithivasan R, Lu Y, Zhu CD, Cressler JD, Belford RE, Joseph AJ
991 - 996	Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se-2 heterojunction solar cells Bayhan H, Kavasoglu AS
997 - 1001	Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applications Kumar A, Nagumo T, Tsutsui G, Ohtou T, Hiramoto T
1002 - 1008	A TCAD methodology for high-speed photodetectors Jacob B, Witzigmann B, Klemenc M, Petit C
1009 - 1016	Accurate modeling and parameter extraction method for organic TFTs Estrada A, Cerdeira A, Puigdollers J, Resendiz L, Pallares J, Marsal LF, Voz C, Iniguez B
1017 - 1028	Electron transport modeling in the inversion layers of 4H and 6H-SiC MOSFETs on implanted regions Zeng YA, White MH, Das MK
1029 - 1033	Preparation and gas-sensing properties of NiFe2O4 semiconductor materials Yang LF, Xie YG, Zhao HY, Wu XH, Wang YD
1034 - 1043	Parameter sensitivity for optimal design of 65 nm node double gate SOI transistors Lim TC, Armstrong GA
1044 - 1048	Electrical properties of [100]-oriented CVD diamond film Su QF, Lu JF, Wang LJ, Liu JM, Ruan JF, Cui JT, Shi WM, Xia YB
1049 - 1051	Identical resonant features of THz photoconductivity and plasmon absorption in a grid-gated double-quantum well FET Popov VV, Teperik TV, Zayko YN, Allen ST, Horing NJM
1052 - 1054	Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes Karatas S, Altindal S