Solid-State Electronics

Solid-State Electronics, Vol.51, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

817 - 819	Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation Ismail RA, Wafa'a KKA, Abdulrazaq OA
820 - 822	Influence of ultrasound on the growth striations and electrophysical properties of GaxIn1-xSb single crystals Kozhemyakin GN, Zolkina LV, Rom MA
823 - 827	Modeling the effect of source/drain junction depth on bulk-MOSFET scaling Murali R, Meindl JD
828 - 837	Design and optimization of a buried channel PMOS integrable in a Si1-xGexBiCMOS process Khare P, Schroder D, Sampson K
838 - 841	Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs Liu DM, Hudait M, Lin Y, Kim H, Ringel SA, Lu W
842 - 859	Comparative technology assessment of future InPHBT ultrahigh-speed digital circuits Ruiz-Palmero JM, Hammer U, Jackel H, Liu H, Bolognesi CR
860 - 864	Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction Niu N, Wang HB, Liu JP, Liu NX, Xing YH, Han J, Deng J, Shen GD
865 - 869	Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes Kim DM, Kim DH, Lee SY
870 - 881	Reduced temperature S-parameter measurements of 400+GHz sub-micron InP DHBTs Li JC, Hussain T, Hitko DA, Royter Y, Fields CH, Milosavljevic I, Thomas S, Rajavel RD, Asbeck PM, Sokolich M
882 - 887	Temperature-dependent characteristics of enhancement-/depletion-mode double delta-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations Huang JC, Wei-Chou HA, Lee CS, Huang DH, Huang MF
888 - 893	A single-poly EEPROM cell structure compatible to standard CMOS process Lin CF, Sun CY
894 - 899	Ultraviolet electroluminescence from organic light-emitting diode with cerium(III)-crown ether complex Yu TZ, Su WM, Li WL, Hua RN, Chu B, Li B
900 - 904	Effect of base-emitter breakdown on class-C power performance of common-base InGaP/GaAs HBTs Halder S, Hwang JCM, Lim JY, Cheon S
905 - 912	MOSFET I-V characteristics at small and large drain biases in the linear region Katto H
913 - 919	Gas-sensing properties and complex impedance analysis of Ce-added WO3 nanoparticles to VOC gases Luo SJ, Fu G, Chen H, Liu ZY, Hong QS
920 - 924	Qualitative analysis on gain compression in power MOS transistor Hsu HM
925 - 930	1.3 mu m AlGaInAs/AlGaInAs strain-compensated multiple-quantumwell index-coupled distribution feedback laser diodes Lei PH
931 - 935	On the temperature stability of integrated MIS low-pass filter structures Kuehn M, Aeron M, Florange R, Kliem H
936 - 940	Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films Kouvatsos DN, Farmakis FV, Moschou DC, Kontogiannopoulos GP, Papaioannou GJ, Voutsas AT
941 - 949	Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes Ozer M, Yildiz DE, Altindal S, Bulbul MM
950 - 954	Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory Zhang T, Song ZT, Liu B, Feng SL, Chen BM
955 - 960	Steady state self-heating and dc current-voltage characteristics of high-voltage 4H-SiC p(+)-n-n(+) rectifier diodes Levinshtein ME, Mnatsakanov TT, Vanov PA, Palmour JW, Das MK, Hull BA
961 - 964	An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGeHBTs Khanduri G, Panwar B
965 - 968	Compact K-band bandpass filter on high-k LiNbO3 substrate Wu CS, Liu HCI, Liu ZP, Chiu HC
969 - 974	Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges Kuzmik J, Bychikhin S, Lossy R, Wuerfl HJ, Poisson MAD, Teyssier JP, Gaquiere C, Pogany D
975 - 981	A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function Chen RS, Zheng XR, Deng WF, Wu ZH
982 - 988	A study of ion implantation into crystalline germanium Wittmann R, Selberherr S
989 - 994	High-performance integrated inductor and effective crosstalk isolation using post-CMOS selective grown porous silicon (SGPS) technique for RFIC applications Li C, Liao HL, Yang L, Huang R
995 - 1001	Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs Tao NG, Liu HG, Bolognesi CR
1002 - 1004	Exact solutions for the capacitance of space charge regions at semiconductor interfaces Schmidt M, Pickenhain R, Grundmann M