| 1005 - 1008 |
Effect of A1N buffer thickness on stress relaxation in GaN layer on Si (111)
Kim DK |
| 1009 - 1013 |
Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory
Lee SE, Kim JY, An HM, Seo KY, Kim B |
| 1014 - 1017 |
Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy
Mandalapu LJ, Xiu F, Yang Z, Liu JL |
| 1018 - 1022 |
A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes
Jun J, Chou B, Lin J, Phipps A, Shengwen X, Ngo K, Johnson D, Kasyap A, Nishida T, Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ |
| 1023 - 1028 |
Lateral InP/InGaAs double heterojunction phototransistor over a trenched interdigitated finger structure
Kim J, Johnson WB, Kanakaraju S, Lee CH |
| 1029 - 1033 |
A novel micro-structure ethanol gas sensor with low power consumption based on La0.7Sr0.3FeO3
Liu L, Zhang T, Qi Q, Zhang L, Chen WY, Xu BK |
| 1034 - 1038 |
An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects
Jeon J, Lee JD, Park BG, Shin H |
| 1039 - 1046 |
Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry
Markov A, Biberin VI, Polyakov AY, Smirnov NB, Govorkov AV, Gavrin VN, Kalikhov AV, Kozlova JP, Veretenkin EP, Bowles TJ |
| 1047 - 1051 |
DC/AC unified OTFT compact modeling and circuit design for RFID applications
Fadlallah M, Billiot G, Eccleston W, Barclay D |
| 1052 - 1055 |
Organic phototransistor based on pentacene as an efficient red light sensor
Noh YY, Kim DY |
| 1056 - 1061 |
The effect of N-channel polysilicon thin-film transistors with body-block spacers
Lin JT, Huang KD, Hu SF |
| 1062 - 1066 |
Modeling of cryogenic capacitance-voltage (C-P) profiling for the determination of minority doping concentration in blocked impurity band (BIB) detector structures
Tschanz SJ, Garcia JC, Haegel NM |
| 1067 - 1072 |
Modelling and analysis of a-SiC : H p-i-n photodetectors: Effect of hydrogen dilution on dynamic model
Loulou M, Abdelkrim M, Gharbi R, Fathallah M, Pirri CF, Tresso E, Tartaglia A |
| 1073 - 1078 |
Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs
Hsueh KP, Hsin YM, Sheu JK, Lai WC, Tun CJ, Hsu CH, Lin BH |
