Solid-State Electronics

Solid-State Electronics, Vol.50, No.7-8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (48 articles)

1171 - 1174	Effect of fabrication process on the charge trapping behavior of SiON thin films Wang SY, Lue HT, Lai EK, Yang LW, Gong J, Chen KC, Hsieh KY, Ku J, Lu CY
1175 - 1177	In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm(2)/Vs for use in high-kappa dielectric NMOSFETs Droopad R, Rajagopalan K, Abrokwah J, Canonico M, Passlack M
1178 - 1182	Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance-voltage characteristics Saadoune A, Dehimi L, Sengouga N, McPherson M, Jones BK
1183 - 1188	Edge termination strategies for a 4 kV 4H-SiC thyristor Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E
1189 - 1193	Investigation of oxygen annealing effects on RF sputter deposited SiC thin films Todi RM, Sundaram KB, Warren AP, Scammon K
1194 - 1200	An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers Chen TB, Sutton AK, Haugerud BM, Henderson W, Prakash APG, Cressler JD, Doolittle A, Liu XF, Joseph A, Marshall PW
1201 - 1205	A novel high performance insulated gate bipolar transistor Zhang F, Shi LN, Li CF
1206 - 1211	Device-partition method using equivalent-circuit model in three-dimensional device simulation Chang CC, Li SJ, Tsai YT
1212 - 1215	Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs Chuang RW, Chiu YJ, Yu CL
1216 - 1218	Full-swing pentacene organic inverter with enhancement-mode driver and depletion-mode load Lee CA, Jin SH, Jung KD, Lee JD, Park BG
1219 - 1226	Impact of device scaling on the 1/f noise performance of deep submicrometer thin gate oxide CMOS devices Chew KW, Yeo KS, Chu SFS, Cheng M
1227 - 1233	Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectric capacitors Goux L, Xu Z, Paraschiv V, Lisoni JG, Maes D, Haspeslagh L, Groeseneken G, Wouters DJ
1234 - 1237	Simple parameter extraction method for illuminated solar cells Chegaar M, Azzouzi G, Mialhe P
1238 - 1243	Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/Al device Aziz MS
1244 - 1251	Modeling and optimization of series resistance of planar MIM capacitors Bajolet A, Clerc R, Pananakakis G, Picollet E, Segura N, Boret S, Bruyere S, Manceau JP, Giraudin JC, Delpech P, Montes L, Ghibaudo G
1252 - 1260	Analytical modeling of CMOS circuit delay distribution due to concurrent variations in multiple processes Harish BP, Bhat N, Patil MB
1261 - 1268	C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs Houk Y, Iniguez B, Flandre D, Nazarov A
1269 - 1275	Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique Saha AR, Chattopadhyay S, Das R, Bose C, Maiti CK
1276 - 1282	An explicit analytical charge-based model of undoped independent double gate MOSFET Reyboz M, Rozeau O, Poiroux T, Martin P, Jomaah J
1283 - 1290	Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes Contopanagos H, Nassiopoulou AG
1291 - 1298	A study on the synthesis from Li2CO3, NiO and Co3O4 and the electrochemical properties of cathode materials LiNi1-yCoyO2 for lithium secondary battery Park HR, Yoon SD
1299 - 1309	An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects Basu D, Dutta AK
1310 - 1314	Electronic properties of Ge nanocrystals for non volatile memory applications Kanoun M, Busseret C, Poncet A, Souifi A, Baron T, Gautier E
1315 - 1319	Charge transport mechanism of Al/Bi2Te3/Al thin film devices Dheepa J, Sathyamoorthy R, Sebastian PJ
1320 - 1329	Surface-potential solutions to the Pao-Sah voltage equation Shangguan WZ, Saeys M, Zhou X
1330 - 1336	Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor Chen WT, Chen HR, Hsu MK, Chiu SY, Chen GH, Chang YC, Lour WS
1337 - 1340	Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction Zhu SY, Li MF
1341 - 1348	A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects Chen BH, Wei JH, Lo PY, Wang HH, Lai MJ, Tsai MJ, Chao TS, Lin HC, Huang TY
1349 - 1354	Microwave dielectric properties of (1-x)(Mg0.95Co0.05)-TiO3-xCa(0.6)La(0.8/3)TiO(3) ceramics with V2O5 addition Huang CL, Wang JJ
1355 - 1358	Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering Chen LC, Liu SC
1359 - 1367	Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOICMOS technology Bindu B, Lakshmi N, Bhat KN, DasGupta A
1368 - 1370	High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime Ivanov PA, Levinshtein ME, Palmour JW, Das MK, Hull BA
1371 - 1374	A new analytic approximation to general diode equation He J, Fang M, Li B, Cao Y
1375 - 1381	A new analytic method to design multiple floating field limiting rings of power devices He J, Chan MS, Zhang X, Wang YY
1382 - 1388	Elastic and optical properties of BeS, BeSe and BeTe under pressure Khenata R, Bouhemadou A, Hichour M, Baltache H, Rached D, Rerat M
1389 - 1394	Application of PVD silver for integrated microwave passives in silicon technology Levenets VV, Amaya RE, Tarr NG, Smy TJ
1395 - 1399	An improved junction capacitance model for junction field-effect transistors Ding H, Liou JJ, Cirba CR, Green K
1400 - 1405	Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications Levy MY, Honsberg C
1406 - 1412	Fabrication and analysis of high-efficiency String Ribbon Si solar cells Nakayashiki K, Rousaville B, Yelundur V, Kirn DS, Rohati A, Clark-Phelps R, Hanoka JI
1413 - 1419	Energy band alignment and interface states in AlGaN/4H-SiC vertical heterojunction diodes Johnson BJ, Capano MA, Mastro MA
1420 - 1424	Band gap widening and narrowing in moderately and heavily doped n-ZnO films Jain A, Sagar P, Mehra RM
1425 - 1429	Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN Vertiatchikh A, Kaminsky E, Teetsov J, Robinson K
1430 - 1439	Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions Ul Hoque MM, Celik-Butler Z, Martin S, Knorr C, Bulucea C
1440 - 1449	Physical modeling of degenerately doped compound semiconductors for high-performance HBT design Li JC, Sokolich M, Hussain T, Asbeck PM
1450 - 1460	Universal MOSFET gate impedance model for 200 MHz-20 GHz frequency range Bandi SPR, Washburn C, Mukund PR, Kolnik J, Paradis K, Howard S, Burleson J
1461 - 1465	Colloidal quantum dot active layers for light emitting diodes Pagan JG, Stokes EB, Patel K, Burkhart CC, Ahrens MT, Barletta PT, O'Steen M
1466 - 1471	Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts Dixit A, Anil KG, Collaert N, Zimmerman P, Jurczak M, De Meyer K
1472 - 1474	Modeling for reduced gate capacitance of nanoscale MOSFETs Dai YH, Chen JN, Ke DM, Xu C, Sun JE