Solid-State Electronics

Solid-State Electronics, Vol.44, No.8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

1343 - 1354	Design and modeling of bulk and SOI power LDMOSFETs for RF wireless applications Trivedi M, Khandelwal P, Shenai K, Leong SK
1355 - 1360	Characteristics of low-temperature silicon nitride (SiNx : H) using electron cyclotron resonance plasma Bae S, Farber DG, Fonash SJ
1361 - 1365	Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors Dimitrov R, Tilak V, Yeo W, Green B, Kim H, Smart J, Chumbes E, Shealy JR, Schaff W, Eastman LF, Miskys C, Ambacher O, Stutzmann M
1367 - 1372	Design and fabrication of planar guard ring termination for high-voltage SiC diodes Sheridan DC, Niu GF, Merrett JN, Cressler JD, Ellis C, Tin CC
1373 - 1379	A scalable thermal model for trench isolated bipolar devices Walkey DJ, Smy TJ, Marchesan D, Tran H, Schroter M
1381 - 1386	A novel area efficient floating field limiting ring edge termination technique De Souza MM, Bose JVSC, Narayanan EMS, Pease TJ, Ensell G, Humphreys J
1387 - 1392	Monolithic bidirectional switch. I. Device concept Sittig R, Heinke F
1393 - 1398	Monolithic bidirectional switch. II. Simulation of device characteristics Heinke F, Sittig R
1399 - 1404	Current gain control of near infrared c-Si phototransistors Shih NF, Pai FJ, Chuang WJ, Hong JW
1405 - 1410	Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing Huang CH, Hwu JG
1411 - 1418	On DC modeling of the base resistance in bipolar transistors Linder M, Ingvarson F, Jeppson KO, Grahn JV, Zhang SL, Ostling M
1419 - 1424	Proportional difference estimate method of determining the characteristic parameters of monomodal and multimodal Weibull distributions of time-dependent dielectric breakdown Mu FC, Tan CH, Xu MZ
1425 - 1429	On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology Yousif MYA, Friesel M, Willander M, Lundgren P, Caymax M
1431 - 1434	Thin film transistors for displays on plastic substrates Lee MJ, Judge CP, Wright SW
1435 - 1439	The influence of tunneling effect and inversion layer quantization effect on threshold voltage of deep submicron MOSFETs Liu XY, Kang JF, Guan XD, Han RQ, Wang YY
1441 - 1446	Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects Bormontov EN, Levin MN, Nakhmanson RS
1447 - 1453	A compact drain-current model for stacked-gate flash memory cells Jang SL, Sheu CJ, Twu CB
1455 - 1461	FECTED oscillator optronic application feasibility Driouch F, Friscourt MR, Dalle C
1463 - 1470	A deconvolution of the transient response of (100) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: evidence of different branches of charge transition Bayer R, Burghardt H, Thurzo I, Zahn DRT, Gessner T
1471 - 1475	Recombination center in C-60/p-Si heterojunction and solar cells Khan A, Yamaguchi M, Kojima N
1477 - 1482	A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits Honjo K
1483 - 1486	Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer Yang CC, Wu MC, Chuo CC, Chyi JI, Lin CF, Chi GC
1487 - 1494	Low-frequency noise in metal-semiconductor contacts with local barrier height lowering Bozhkov VG, Vasiliev OV
1495 - 1500	The noise analysis and noise reliability indicators of optoelectron coupled devices Dai YS, Xu JS
1501 - 1506	Study of Fowler-Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method Mao LF, Tan CH, Xu MZ
1507 - 1509	Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect Niu GF, Cressler JD, Mathew SJ, Subbanna S
1511 - 1514	Quantum mechanical influence and estimated errors on interface-state density evaluation by quasi-static C-V measurement Omura Y, Nakajima Y