Solid-State Electronics

Solid-State Electronics, Vol.46, No.8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

1075 - 1078	Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors Lee HY, Lin IJ, Shieh HM, Lee CT
1079 - 1083	Degradation of passivated and non-passivated N-channel low-temperature polycrystalline silicon TFTs prepared by excimer laser processing Teng TH, Huang CY, Chang TK, Lin CW, Cheng LJ, Lu YL, Cheng HC
1085 - 1090	Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing Tseng CH, Lin CW, Teng TH, Chang TK, Cheng HC, Chin A
1091 - 1095	Self-aligned fabrication of thin-film transistors with field-induced drain Yu CM, Lin HC, Lin CY, Yeh KL, Huang TY, Lei TF
1097 - 1101	Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process Chang TY, Lei TF, Chao TS, Chen SW, Kao LM, Chen SK, Tuan A, Su TP
1103 - 1108	Surface treatment and electrical properties of directly wafer-bonded InP epilayer on GaAs substrate Horng RH, Peng WC, Wuu DS, Ho WJ, Huang YS
1109 - 1111	Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode Su YK, Wu CH, Chang JR, Wu KM, Wang HC, Chen WB, You SJ, Chang SJ
1113 - 1116	The band-edge light emission from the metal-oxide-silicon tunneling diode on (110) substrates Chang ST, Chen KF, Shie CR, Liu CW, Chen MJ, Lin CF
1117 - 1121	A design consideration of channel doping profile for sub-0.12 mu m partially depleted SOI n-MOSFET's Juang MH, Ou-Yang CI, Jang SL
1123 - 1126	Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure Chen CC, Hsieh KL, Chi GC, Chuo CC, Chyi JI, Chang CA
1127 - 1131	Low-dielectric constant FLARE 2.0 films for bottom antireflective coating layers in KrF lithography Chen HL, Cheng HC, Li MY, Ko FH, Huang TY, Chu TC
1133 - 1137	Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors Mutlu AA, Gunther NG, Rahman M
1139 - 1143	Novel applications of X-ray analysis to microelectronic materials and devices Cargill GS
1145 - 1150	Investigation of disturbance for the new dual floating gate multilevel flash cells Lin HC, Chen JTY, Chang JH
1151 - 1154	A novel GaAs MESFET with surface oxygen implantation Hsin YM, Hsueh KP, Hsu CJ
1155 - 1161	Influence of the silicon substrate thickness on the response of thin film pyroelectric detectors Ko JS, Liu WG, Zhu WG, Kwak BM
1163 - 1167	The extraction of MOSFET gate capacitance from S-parameter measurements Su JG, Wong SC, Chang CY, Huang TY
1169 - 1176	Analysis of body bias effect with PD-SOI for analog and RF applications Lee H, Nah H, Lee JH, Kang DG, Park YJ, Min HS
1177 - 1184	Drift region optimization of lateral RESURF devices Vestling L, Olsson J, Eklund KH
1185 - 1192	New "silicon limit" of power devices Chen XB, Yang HQ, Cheng M
1193 - 1204	MOCVD-grown HEMTs on Al2O3 substrates Johnson JW, Ren F, Baca AG, Briggs RD, Shul RJ, Monier C, Han J, Pearton SJ
1205 - 1209	The design and fabrication of a micro-thermal/pressure-sensor for medical electro-skin application Ho JJ
1211 - 1214	DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress Tarakji A, Hu X, Koudymov A, Simin G, Yang J, Khan MA, Shur MS, Gaska R
1215 - 1225	Analog circuit design using graded-channel silicon-on-insulator nMOSFETs Pavanello MA, Martino JA, Flandre D
1227 - 1230	Formation of low resistivity ohmic contacts to n-type 3C-SiC Wan JW, Capano MA, Melloch MR
1231 - 1234	Comparison of GaN epitaxial films on silicon nitride buffer and Si(111) Huang JY, Ye ZZ, Wang L, Yuan J, Zhao BH, Lu HM
1235 - 1239	Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes Cao XA, Stokes EB, Sandvik P, Taskar N, Kretchmer J, Walker D
1241 - 1245	The impact of implantation sequence on the characterization of n-MOSFET's with gate oxide grown on nitrogen-implanted Si substrate Wu YL
1247 - 1249	Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers Dang G, Luo B, Ren F, Hobson WS, Lopata J, Pearton SJ, Chang W, Shen H