Solid-State Electronics

Solid-State Electronics, Vol.44, No.9 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

1515 - 1521	Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications Monier C, Chang PC, Li NY, LaRoche JR, Baca AG, Hou HQ, Ren F, Pearton SJ
1523 - 1531	Characterization of tunneling current in ultra-thin gate oxide Ghetti A, Liu CT, Mastrapasqua M, Sangiorgi E
1533 - 1536	Effects of O-2/N2O-plasma treatment on nitride films on strained Si Bera LK, Senapati B, Maikap S, Maiti CK
1537 - 1541	Modeling gate oxide breakdown under bipolar stress Duan XD, Yuan JS
1543 - 1548	Fabrication and characterization of in situ-doped a-Si0.8C0.2 emitter bipolar transistors Orpella A, Puigdollers J, Bardes D, Alcubilla R, Marsal LF, Pallares J
1549 - 1555	Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors Polyakov AY, Smirnov NB, Govorkov AV, Zhang AP, Ren F, Pearton SJ, Chyi JI, Nee TE, Chuo CC, Lee CM
1557 - 1562	Breakdown mechanism of Al2O3 based metal-to-metal antifuses Li WT, McKenzie DR, McFall WD, Zhang QC, Wiszniewski W
1563 - 1568	Output conductance dispersion and drain current transients in InP-HFETs: observations and equivalent circuit model Gautier-Levine A, Chevalier S, Post G, Scavennec A
1569 - 1571	Leakage current in PZT films with sputtered RuOx electrodes Law CW, Tong KY, Li JH, Li K
1573 - 1583	Optimum carrier distribution of the IGBT Sheng K, Udrea F, Amaratunga GAJ
1585 - 1590	Extracting diffusion length using the single contact electron beam induced current technique Ong VKS, Wu D
1591 - 1595	Spatial distribution of electrical properties in GaN p-i-n rectifiers Polyakov AY, Smirnov NB, Govorkov AV, Zhang AP, Ren F, Pearton SJ, Chyi JI, Nee TE, Lee CM, Chuo CC
1597 - 1602	Novel four-peak or five-peak current-voltage characteristics for three negative differential resistance devices in series Gan KJ
1603 - 1607	Novel high sensitivity and selectivity semiconductor gas sensor based on the p + n combined structure Wang YD, Wu XH, Zhou ZL
1609 - 1612	Consequences of space dependence of effective mass in quantum dots Borovitskaya E, Shur MS
1613 - 1619	High performance gated lateral polysilicon PIN diodes Stewart M, Hatalis MK
1621 - 1625	An ultra-thin midgap gate FDSOI MOSFET Shang HL, White MH
1627 - 1634	Transit-time considerations in metal-semiconductor-metal photodiode under high illumination conditions Averine SV, Sachot R
1635 - 1640	A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted delta-doped heterostructure field-effect transistor Lee CS, Hsu WC, Shieh HM, Su JS, Jain SY, Lin W
1641 - 1645	Cycling effects in nitrogen doped tetrahedral amorphous carbon non-volatile memory cells Gerstner EG, McKenzie DR
1647 - 1653	Thermal model for breakdown in p-type hydrogenated amorphous silicon films with coplanar electrodes Avila A, Asomoza R
1655 - 1661	Structural and optical properties of GaN films grown by the direct reaction of Ga and NH3 in a CVD reactor Yang SH, Ahn SH, Jeong MS, Nahm KS, Suh EK, Lim KY
1663 - 1668	Inverse C-V profiling technique for heterostructure semiconductor devices taking account of two-dimensional quantization effect Kikuchi N, Ogawa M, Miyoshi T
1669 - 1677	Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition Lachab M, Youn DH, Fareed RSQ, Wang T, Sakai S
1679 - 1684	Breakdown of transistors in Marx bank circuit Chatterjee A
1685 - 1688	0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs Zaknoune M, Cordier Y, Bollaert S, Ferre D, Theron D, Crosnier Y
1689 - 1695	Electron transport in a model Si transistor Banoo K, Lundstrom MS
1697 - 1702	A new charge model including quantum mechanical effects in MOS structure inversion layer Ma YT, Liu LT, Deng W, Tian LL, Li ZJ, Yu ZP
1703 - 1706	Conduction-band deformation effect on stress-induced leakage current Duan XD, Yuan JS
1707 - 1710	Analytic modeling of the subthreshold behavior in MOSFET Liu CW, Hsieh TX