Solid-State Electronics

Solid-State Electronics, Vol.47, No.9 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

1419 - 1427	A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs Vandooren A, Cristoloveanu S, Conley JF, Mojarradi M, Kolawa E
1429 - 1436	A comparative investigation of the MCST with MCT and IGBT Huang S, Udrea F, Amaratunga GAJ
1437 - 1441	The effect of titanium on Al-Ti contacts to p-type 4H-SiC Johnson BJ, Capano MA
1443 - 1449	Model for random telegraph signals in sub-micron MOSFETS Amarasinghe NV, Celik-Butler Z, Zlotnicka A, Wang F
1451 - 1456	Low frequency current noise in 2.5 nm MOSFET and fractal dimension of soft breakdown Huo ZL, Mao LF, Xu MZ, Tan CH
1457 - 1459	Zero-point correction of the carrier density in the measurement of MOS inversion-layer mobility Terada K, Okamoto S
1461 - 1464	Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers Nigam S, Kim J, Luo B, Ren F, Chung GY, Shenai K, Neudeck PG, Pearton SJ, Williams JR
1465 - 1470	Effective-channel-length extraction for double-diffused MOSFETs Terada K, Ichikawa S, Eshima Y, Yamauchi T, Matsuki T
1471 - 1478	Current-voltage characteristics of GaSb homojunctions prepared by MOVPE Touskova J, Kindl D, Blahitka B, Tousek J, Hulicius E, Pangrac J, Samochin E, Simecek T, Vyborny Z
1479 - 1486	Modeling the polarization in ferroelectric materials: a novel analytical approach Meyer V, Sallese JM, Fazan P, Bard D, Pecheux F
1487 - 1490	Comparison of Pt/GaN and Pt/4H-SiC gas sensors Kim J, Gila BP, Abernathy CR, Chung GY, Ren F, Pearton SJ
1491 - 1499	Analysis of interstrip capacitance of Si microstrip detector using simulation approach Chatterji S, Bhardwaj A, Ranjan K, Namrata, Srivastava AK, Shivpuri RK
1501 - 1506	RF performance of GaN-based npn bipolar transistors Lee KP, Dabiran A, Osinsky A, Chow PP, Pearton SJ, Ren F
1507 - 1514	Hot-electron induced MOSFET gate current simulation by coupled silicon/oxide Monte Carlo device simulation Ghetti A
1515 - 1522	Empirical reliability modeling for 0.18-mu m MOS devices Cui Z, Liou JJ, Yue Y, Vinson J
1523 - 1531	Properties of mn and co implanted ZnO crystals Polyakov AY, Govorkov AV, Smirnov NB, Pashkova NV, Pearton SJ, Overberg ME, Abernathy CR, Norton DP, Zavada JM, Wilson RG
1533 - 1538	Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers Baik KH, Irokawa Y, Ren F, Pearton SJ, Park SS, Park YJ
1539 - 1542	Nitride-based LEDs fabricated on patterned sapphire substrates Chang SJ, Lin YC, Su YK, Chang CS, Wen TC, Shei SC, Ke JC, Kuo CW, Chen SC, Liu CH
1543 - 1548	All-polymer capacitor fabricated with inkjet printing technique Liu Y, Cui TH, Varahramyan K
1549 - 1552	Ferromagnetism in Mn- and Cr-implanted AlGaP Overberg ME, Thaler GT, Frazier RM, Rairigh R, Kelly J, Abernathy CR, Pearton SJ, Hebard AF, Wilson RG, Zavada JM
1553 - 1558	High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications Li B, Wu ZH, Lai PT, Sin JKO, Liu BY, Zheng XR
1559 - 1563	Electron mobility and terahertz detection using silicon MOSFETs Deng YQ, Shur MS
1565 - 1568	High power nitride based light emitting diodes with Ni/ITO p-type contacts Lin YC, Chang SJ, Su YK, Chang CS, Shei SC, Ke JC, Lo HM, Chen SC, Kuo CW
1569 - 1575	Non-destructive deep trap diagnostics of epitaxial structures Gorev NB, Kodzhespirova I, Privalov EN, Khvedelidze L, Khuchua N, Peradze GG, Shur MS, Stevens K
1577 - 1580	High performance 0.25 mu m gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz Kumar V, Kuliev A, Schwindt R, Muir M, Simin G, Yang J, Khan MA, Adesida I
1581 - 1587	The critical charge concept for 4H-SiC-based thyristors Mnatsakanov TT, Yurkov SN, Levinshtein ME, Tandoev AG, Agarwal AK, Palmour JW
1589 - 1596	A capacitance-voltage model for polysilicon-gated MOS devices including substrate quantization effects based on modification of the total semiconductor charge Vogel EM, Richter CA, Rennex BG
1597 - 1600	Gate breakdown characteristics of MgO/GaN MOSFETs Cho H, Lee KP, Gila BP, Abernathy CR, Pearton SJ, Ren F
1601 - 1604	Temperature dependence of MgO/GaN MOSFET performance Cho H, Lee KP, Gila BP, Abernathy CR, Pearton SJ, Ren F