Solid-State Electronics

Solid-State Electronics, Vol.48, No.9 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (34 articles)

1461 - 1461	Non volatile memories with discrete storage nodes - Foreword De Salvo B, Lombardo S
1463 - 1473	Silicon nanocrystal based memory devices for NVM and DRAM applications Rao RA, Steimle RF, Sadd M, Swift CT, Hradsky B, Straub S, Merchant T, Stoker M, Anderson SGH, Rossow M, Yater J, Acred B, Harber K, Prinz EJ, White BE, Muralidhar R
1475 - 1481	Engineering on tunnel barrier and dot surface in Si nanocrystal memories Baik SJ, Choi S, Chung UI, Moon JT
1483 - 1488	Nanocrystal memories for FLASH device applications Ammendola G, Ancarani V, Triolo V, Bileci M, Corso D, Crupi I, Perniola L, Gerardi C, Lombardo S, DeSalvo B
1489 - 1495	Spatial characterization of localized charge trapping and charge redistribution in the NROM device Shappir A, Levy D, Shacham-Diamand Y, Lusky E, Bloom I, Eitan B
1497 - 1502	Study of nanocrystal memory reliability by CAST structures Compagnoni CM, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C
1503 - 1509	Growth and characterization of LPCVD Si quantum dots on insulators Baron T, Mazen F, Hartmann JM, Mur P, Puglisi RA, Lombardo S, Ammendola G, Gerardi C
1511 - 1517	Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis Dimitrakis P, Kapetanakis E, Tsoukalas D, Skarlatos D, Bonafos C, Ben Asssayag G, Claverie A, Perego M, Fanciulli M, Soncini V, Sotgiu R, Agarwal A, Ameen M, Sohl C, Normand P
1519 - 1524	Development of silicon nitride dots for nanocrystal memory cells Wan YM, Buffet N, van der Jeugd K, Mur P, Mariolle D, Nicotra G, Lombardo S
1525 - 1530	Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique Rosmeulen M, Breuil L, Lorenzini M, Haspeslag L, Van Houdt J, De Meyer K
1531 - 1537	Characteristics of bonds produced by full ceramic and composite ultrasonic transducers Xu CH, Chan HLW, Ng WY, Cheung KYM, Liu PCK
1539 - 1548	Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation Sallese JM, Krummenacher F, Fazan P
1549 - 1553	Surface treatment for enhancing current gain of AlGaAs/GaAs heterojunction bipolar transistor Oh TK, Baek CH, Kang BK
1555 - 1562	Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device Saito W, Omura I, Ogura T, Ohashi H
1563 - 1568	Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN Reddy VR, Kim SH, Song JO, Seong TY
1569 - 1577	Silicon carbide TUNNETT diodes Buniatyan VV, Aroutiounian VM, Zekentes K, Camara N, Soukiassian P
1579 - 1586	Investigation of defect properties in Cu(In,Ga)Se-2 solar cells by deep-level transient spectroscopy Kerr LL, Li SS, Johnston SW, Anderson TJ, Crisalle OD, Kim WK, Abushama J, Noufi RN
1587 - 1595	High-voltage planar Si detectors for high-energy physics experiments: comparison between metal-overhang and field-limiting ring techniques Ranjan K, Bhardwaj A, Namrata, Chatterji S, Srivastava AK, Jha MK, Kumar A, Shivpuri RK
1597 - 1600	GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact Song JO, Leem DS, Kim SH, Kwak JS, Nam OH, Park Y, Seong TY
1601 - 1606	Prediction study of elastic properties under pressure effect for zincblende BN, AlN, GaN and InN Kanoun MB, Merad AE, Merad G, Cibert J, Aourag H
1607 - 1612	Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances Egley JL, Vandooren A, Winstead B, Verret E, Workman C, White B, Nguyen BY
1613 - 1622	A unified analytical model for charge transport in Heterojunction Bipolar Transistors Reddy KV, DasGupta A
1623 - 1627	The role of surface adsorbates on electrical properties of MOVPE grown HgCdTe onto (001) GaAs substrates Kim JS, Kim YH, Kim BK, Je HJ
1629 - 1635	Effects of a trench under the gate in high voltage RESURF LDMOSFET for SOI power integrated circuits Son WS, Sohn YH, Choi SY
1637 - 1641	Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base Jin Z, Otten F, Reimann T, Neumann S, Prost W, Tegude FJ
1643 - 1650	Characterization of symmetrical spiral inductor in 0.35 mu m CMOS technology for RF application Teo TH, Choi YB, Liao HL, Xiong YZ, Fu JS
1651 - 1654	1.3 mu m compressive-strain GaInAsP/GaInAsP multiple- quantum-well laser diodes with a tensile-strain GaInP electron stopper layer Wu MY, Tsai CL, Wu MC, Lei PH, Ho CL, Ho WJ
1655 - 1660	Realizing high breakdown voltages (> 600 V) in partial SOI technology Tadikonda R, Hardikar S, Narayanan EMS
1661 - 1666	Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs Omura Y, Nakakubo A, Nakatsuji H
1667 - 1672	An improved In-based ohmic contact to n-GaSb Robinson JA, Mohney SE
1673 - 1677	Determination of optimal insulator thickness for MISiC hydrogen sensors Xu JP, Lai PT, Han B, Tang WM
1679 - 1681	Photoelectromagnetic detector on the basis of CdxHg1-xTe Gaziyev FN, Huseynov EK
1683 - 1686	Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation Wang CC, Huang HK, Wang YH, Houng MP, Wu CL, Chang CS
1687 - 1690	Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics Lee SC, Simoen E, Badenes G