Solid-State Electronics

Solid-State Electronics, Vol.49, No.9 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (16 articles)

1453 - 1453	Papers selected from the Eurosoi Workshop - Foreword Gamiz F
1454 - 1460	A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices Gomez-Campos FM, Rodriguez-Bolivar S, Jimenez-Tejada JA, Carceller JE
1461 - 1465	Cross-talk suppression in SOI substrates Baine P, Jin M, Gamble HS, Armstrong BM, Linton D, Mohammed F
1466 - 1476	Advanced CAD methodology for history effect characterization in partially depleted SOI libraries Liot V, Flatresse P, Fournier JM, Belleville M
1477 - 1483	Intra-chip wireless interconnections based on high performances integrated antennas Triantafyllou A, Farcy A, Benech P, Ndagijimana F, Exshaw O, Tinella C, Richard O, Raynaud C, Torres J
1484 - 1487	Embedded EEPROM design in PD-SOI for application in an extended temperature range (-40 degrees C up to 200 degrees C) Richter S, Kirsten D, Richter S, Nuernbergk D
1488 - 1496	FinFET analogue characterization from DC to 110 GHz Lederer D, Kilchytska V, Rudenko T, Collaert N, Flandre D, Dixit A, De Meyer K, Raskin JP
1497 - 1503	Field effect and Coulomb blockade in silicon on insulator nanostructures fabricated by atomic force microscope Ionica I, Montes L, Ferraton S, Zimmermann J, Saminadayar L, Bouchiat V
1504 - 1509	A comprehensive study of carrier velocity modulation in DGSOI transistors Sampedro C, Gamiz F, Godoy A, Prunnila M, Ahopelto J
1510 - 1515	Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach Sverdlov V, Gehring A, Kosina H, Selberherr S
1516 - 1521	Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs Prunnila M, Ahopelto J, Gamiz F
1522 - 1528	Integration of buried insulators with high thermal conductivity in SOI MOSFETs: Thermal properties and short channel effects Bresson N, Cristoloveanu S, Mazure C, Letertre F, Iwai H
1529 - 1535	Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas Lucci L, Palestri P, Esseni D, Selmi L
1536 - 1546	Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs Rafi JM, Simoen E, Mercha A, Campabadal F, Claeys C
1547 - 1555	A new memory effect (MSD) in fully depleted SOI MOSFETs Bawedin M, Cristoloveanu S, Yun JG, Flandre D
1556 - 1567	Review of SiGeHBTs on SOI Mitrovic IZ, Buiu O, Hall S, Bagnall DM, Ashburn P