Solid-State Electronics

Solid-State Electronics, Vol.53, No.9 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

921 - 924	TCAD-based demonstration of improved spacer select gate EEPROM cell architecture Bahng YS
925 - 930	Optimization of the back contact in c-Si solar cells Yang SM, Pla J
931 - 934	A K-band differential Colpitts cross-coupled VCO in 0.13 mu m CMOS Jang SL, Lee CF, Chang CW
935 - 939	Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance Pulfrey DL, Chen L
940 - 943	Wide temperature operational range of a 1310 nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coating Wang CY, Hsu JC, Shiao HP
944 - 954	Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) Lefranc P, Planson D, Morel H, Bergogne D
955 - 958	The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method Feng Q, Li LM, Hao Y, Ni JY, Zhang JC
959 - 971	Impact of metal silicide layout covering source/drain diffusion region on minimization of parasitic resistance of triple-gate SOI MOSFET and proposal of practical design guideline Omura Y, Yoshimoto K, Hayashi O, Wakabayashi H, Yamakawa S
972 - 978	Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot Gulnahar M, Efeoglu H
979 - 987	Comparison of theory and experiment in a modified BICFET/HFET structure Yao J, Cai J, Opper H, Basilica R, Garber R, Taylor GW
988 - 992	Particle swarm optimization versus genetic algorithms to study the electron mobility in wurtzite GaN-based devices Djeffal F, Lakhdar N, Meguellati M, Benhaya A
993 - 997	Tunable patterned ferroelectric parallel-plate varactors for matching network Zhang XY, Wang P, Xu F, Ong CK
998 - 1000	A comparative study of the DRAM leakage mechanism for planar and recessed channel MOSFETs Lee MJ, Baek CK, Park S, Chung IY, Park YJ
1001 - 1008	Drain current model for nanoscale double-gate MOSFETs Hariharan V, Thakker R, Singh K, Sachid AB, Patil MB, Vasi J, Rao VR
1009 - 1015	Transport properties in semiconductor-gas discharge electronic devices Sadiq Y, Kurt H, Albarzanji AO, Alekperov SD, Salamov BG
1016 - 1019	A spin field effect transistor using stray magnetic fields Koo HC, Eom J, Chang J, Han SH
1020 - 1031	An extended drain current conductance extraction method and its application to DRAM support and array devices Joodaki M
1032 - 1035	Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips Sun XJ, Hu LZ, Song H, Li ZM, Li DB, Jiang H, Miao GQ
1036 - 1040	The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer Juang MH, Huang CW, Chang CW, Shye DC, Hwang CC, Wang JL, Jang SL
1041 - 1045	A compact model of fringing field induced parasitic capacitance for deep sub-micrometer MOSFETs Liu X, Jin X, Lee JH
1046 - 1049	Feasibility study on rapid thermal processing Karle SC, Shaligram AD
1050 - 1055	Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube composites Xue W, Cui TH
1056 - 1058	Efficiency enhancement of organic light emitting diodes by NaOH surface treatment of the ITO anode Cusumano P