Solid-State Electronics

Solid-State Electronics, Vol.50, No.9-10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (32 articles)

1475 - 1478	Extraction of collector resistances for device characterization and compact models Wu HC, Mijalkovic S, Burghartz JN
1479 - 1482	Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers Goghero D, Gautier B, Descamps A, Bremond G, Faucher M, Mariolle D, Bertin F
1483 - 1488	Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance Choi K, Yu DY, Lee K, Kim B, Zhu H, Vargason K, Kuo JM, Pinsukanjana P, Kao YC
1489 - 1494	Gate current modeling of high-k stack nanoscale MOSFETs Wang W, Gu N, Sun JP, Mazumder P
1495 - 1500	Voltage-tunable SiO2-isolated a-SiC : H and/or a-SiN : H p-i-n thin-film LEDs fabricated on c-Si Yeh RH, Liu WH, Lo SY, Hong JW
1501 - 1505	Optoelectronic characteristics of MEH-PPV polymer LEDs with thin, doped composition-graded a-SiC : H carrier injection layers Lo SY, Fang KS, Yeh RH, Hong JW
1506 - 1509	Improved polymer light-emitting diodes by the tuning of charge balance Quan SY, Teng F, Xu Z, Qian L, Wang YS
1510 - 1514	Characteristics of Ni/SiC Schottky diodes grown by ICP-CVD Gil TH, Kim HS, Lee JW, Kim YS
1515 - 1521	Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer Miyoshi M, Egawa T, Ishikawa H
1522 - 1528	Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique Choi YS, Kim SJ
1529 - 1531	Effect of annealing on photoluminescence of passivated porous silicon Zhao Y, Li DS, Sang WB, Yang DR
1532 - 1539	Temperature dependences of surface recombination DC current-voltage characteristics in MOS structures Chen Z, Jie BB, Sah CT
1540 - 1545	An optimization technique for parameter extraction of ultra-deep submicron LDD MOSFET's Hao Y, Yang LA, Yu CL
1546 - 1550	Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes Joo H, Jeon SC, Kwon YH, Choe JS, Yun I
1551 - 1556	A new method to simulate random dopant induced threshold voltage fluctuations in sub-50 nm MOSFET's with non-uniform channel doping Yin J, Shi XK, Huang R
1557 - 1562	A novel analytical approach to parameter extraction for on-chip spiral inductors taking into account high-order parasitic effect Huang FY, Lu JX, Jiang DM, Wang XC, Jiang N
1563 - 1566	Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode Bayhan H, Ozden S
1567 - 1578	High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators Shimizu N, Miyoshi M, Tange S, Sekiya T, Ito T, Sakuma T, Sakurai T, Terasawa T, Hatano M, Hotta S, Imanishi Y, Okimoto A, Asai M, Oda O, Nishizawa J
1579 - 1583	Analysis for load limitation of square-shaped silicon diaphragms Zhao LL, Xu C, Shen GD
1584 - 1587	Electron mobility of rare earth complexes measured by transient electroluminescence method Zang FX, Lengyel O, Li WL, Hong ZR, Liu Z, Lee CS, Lee ST
1588 - 1594	Abnormal blue shift of InGaN micro-size light emitting diodes Pong BJ, Chen CH, Yen SH, Hsu JF, Tun CJ, Kuo YK, Kuo CH, Chi GC
1595 - 1611	A physical hydrodynamic 2D model for simulation and scaling of InP/InGaAs(P) DHBTs and circuits with limited complexity Ruiz-Palmero JM, Hammer U, Jackel H
1612 - 1617	Performance of mid-wave infrared (3.8 mu m) light emitting diode device Das NC, Tobin MS
1618 - 1624	Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress Behnan A, Karbassian F, Mohajerzadeh S, Ebrahimi A, Robertson MD
1625 - 1628	Characteristics of InAlAs/InP and InAIP/GaAs native oxides Bae SJ, Kim JM, Park CY, Lee YT
1629 - 1633	Diode-like behavior based on polyaniline and Pt Xing SX, Zhao C, Niu L, Wu Y, Wang JM, Wang ZC
1634 - 1639	Investigation of scaling of InSb MOSFETs through drift-diffusion simulation Sijercic E, Pejcinovic B
1640 - 1648	Responsivity and lifetime of resonant-cavity-enhanced HgCdTe detectors Wehner JGA, Musca CA, Sewell RH, Dell JM, Faraone L
1649 - 1655	Working prototype of an optoelectronic XOR/OR/YES reconfigurable logic device based on nanocrystalline semiconductors Szacilowski K, Macyk W
1656 - 1666	The collection probability and spectral response in isotype heterolayers of tandem solar cells Al-Omar AAS
1667 - 1669	A low voltage SANOS nonvolatile semiconductor memory (NVSM) device Zhao YJ, Wang XN, Shang HL, White MH
1670 - 1672	Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics Chang KW, Chang FM, Ruzyllo J