323 - 332 |
High-Tg N-Triarylamine Derivatives as a Hole Injecting Layer in Organic Light-Emitting Diodes Cho HY, Park LS, Han YS, Kwon Y, Ham JY |
333 - 339 |
C60 Modification of Al Anode for Efficient Hole Injection in Organic Light-Emitting Diodes Lee JY |
340 - 347 |
Red Phosphorescent Dopant/Polymeric Host System as an Emitting Layer: Effect of Hole Blocking Materials Wang H, Ryu JT, Han YS, Kwon Y |
348 - 359 |
Preparation of Blue-Emitting Phosphorescent Iridium(III) Complex Under Ultrasound Reaction Yu HJ, Park K, Kim SH |
360 - 369 |
Optical Properties of Cyclic Amine Type Dyes, and Their Electronic Band Structures with Molecular Microstructure Kim KS, Han YS, Kim C, Jeong S, Kwak G, Kim H, Kwon Y, Park SH, Woo SH, Kim DH, Ha KR, Choi BD |
370 - 379 |
Synthesis and Properties of Random Carbazole/1,3,4-Oxadiazole/Aniline Copolymers for Organic Light-Emitting Devices Wang H, Ryu JT, Kwon Y, Han YS |
380 - 387 |
Characteristics of ITO and Overcoat Layer for Full Color Organic Light Emitting Diode with Color Filter Lee CJ, Choi DK, Han JI |
388 - 396 |
Color Stability of White Organic Light Emitting Diodes as Position of Partially Doped Rubrene in DPVBi Emission Layer Lee CJ, Choi DK, Han JI |
397 - 406 |
A Red Doped OLEDS with a Good Device Performance at High Doping Concentration Ryu GY, Seo JH, Park JH, Lee SG, Lim SH, Shin DM, Kim YK |
407 - 413 |
Photoluminescence Characteristics of Nanocrystalline ZnGa2O4 Phosphors Obtained at Different Sintering Temperatures Cha JH, Kim KH, Park YS, Park SJ, Choi HW |
414 - 421 |
Co-precipitation Synthesis and Photoluminescence of YAG:Ce Phosphors Kim PS, Park SJ, Choi HW, Kim KH, Yoon HH |
422 - 433 |
Synthesis and Hole-Transporting Properties of Ethyl-Carbazyl Derivatives Lee YM, Kim SK, Lee CJ, Lee JH, Park JW |
434 - 449 |
Synthesis and Electro-Optical Properties of Carbazole Containing Copolymers with Different Conjugated Structures for Polymer Light-Emitting Devices Kim JW, Park EJ, Lyu EJ, Lee YS, Kwon Y, Park LS |
450 - 459 |
Design of a Highly Efficient Lightguide Plate Using an Anisotropic Layer with Polarization-Separating Microstructures Hwang S, Kim Y, Kim YT, Nam S, Lee SD |
460 - 471 |
Properties of a Cross Type Xe Plasma Flat Fluorescent Lamp Lee YK, Kang JH, Heo ST, Yoon SI, Oh MH, Lee DG |
472 - 481 |
Effect of Factors on Growth of Carbon Nanotubes by Thermal CVD Yoon SI, Heo ST, Kim SS, Lee YK, Chun HT, Lee DG |
482 - 490 |
Field Emission Characteristics of Oxidized Porous Poly-silicon Field Emitters Using a Tungsten Bottom Electrode Jang IH, Kim JE, Ryu GH, Choi SY |
491 - 499 |
The Threshold Voltage Shift of a-Si:H Thin Film Transistor Fabricated with Different Hydrogen Dilutions Park DY, Moon KH, Choi SY |
500 - 506 |
Characteristics of ITO Thin Films for the Plasma Display Panel Prepared by a MF Dual Magnetron Sputtering in the Oxygen Atmosphere Lee JH, Sohn SH, Moon JH, Park MS, Lee SG |
507 - 514 |
APL-Adaptive Inverse Gamma Correction for Improving Gray-Level Linearity of PDP-TV Kang SJ, Chien SI |
515 - 526 |
Photo-Cured Polymeric Insulating Materials Having High-Performance Electrical Properties Kim GH, Yoon SM, Kim CA, Suh KS |
527 - 534 |
The Discharging Characteristics of Spin-Coated MgO Thin Films with Li Dopant in a Flat Fluorescent Lamp Structure Ryu SH, Ahn SI, Lee SE, Kwon S, Choi KC |
535 - 545 |
Discharge Characteristics and Fabrication Process of Face-to-Face Sustain Electrode Structure in AC-Plasma Display Panel Kim BS, Tae HS |
546 - 555 |
A Study on MgO Characteristics of AC Plasma Display Panel Fabricated by Vacuum Sealing Method Park CS, Tae HS, Kwon YK, Heo EG |
556 - 563 |
Properties and Structure of P2O5-V2O5-ZnO/B2O3 Glasses Sung W, Won J, Lee J, Kim H |
564 - 572 |
Wettability Between Vehicle and Lead/Bismuth Oxide Glasses Lee S, Kim D, Hwang S, Hong K, Kim H |
573 - 580 |
Characteristics of Photo Leakage Currents of a-Si:H TFT Caused by the Illuminations from CCFL and White LED Backlight Hong SJ, Kwon SJ, Cho ES |
581 - 589 |
Electro-Active Polymer Actuator Based on Aligned Cellulose Nanofibrous Membrane (Retracted article. See vol. 503, pg. 166, 2009) Lee EH, Kim HM, Lim SK, Kim KS, Chin IJ |
590 - 597 |
Nonvolatile Poly-silicon Memory Device with Oxide-Nitride-Oxynitride Stack Structure on Glass for Flat Panel Display Jung S, Jo J, Jang K, Son H, Kim J, Heo J, Hwang S, Kim K, Choi BD, Yi J |
598 - 603 |
Organic Thin Film Transistors Fabricated with Soluble Pentacene Active Channel Layer and NiOx Electrodes Lee JW, Han JW, Lee SK, Han JM, Moon BM, Seo DS, Kim JH |
604 - 611 |
Fabrication of Black/White Electronic Ink Using High Mobility Particles Kim CA, Kang SY, Kim GH, Ahn SD, Oh J, Suh KS |
612 - 619 |
The Analysis of Memory Margin of an Alternative Current-Plasma Display Panel with K-Ion-Doped MgO Ahn SI, Uchiike H, Ahn MH, Kwon SJ |
620 - 626 |
An in-situ Study on Discharging Characteristics of an Alternative Current Plasma Display Panel Varied with Discharging Space Li ZH, Ahn SI, Kwon SJ |
627 - 632 |
Synthesis and Electrophoretic Properties of Poly(acrylamide-co-methylmethacrylate) Coated Organic Pigments Lee MA, Kim YH, Park BJ, Choi HJ |
633 - 637 |
Stability of ITO Films with Oxide Buffer Layer Grown onto PES Substrates Kim CS, Lee SM, Jung SK, Lee YS, Sohn SH |
638 - 646 |
Effects of Temperature on ITO Films Grown by Low Frequency (60Hz) Magnetron Sputtering Jung SK, Lee SH, Lee YS, Lee SM, Park LS, Sohn SH |
647 - 652 |
Optical Properties of the (Y,Gd)BO3:Eu3+ Phosphor Coated with SiO2 Nano Particles Lee JH, Jung SK, Lee SM, Sohn SH |