Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.18, No.2 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (99 articles)

295 - 298	Bipolaron formation in para-sexiphenyl thin films upon Cs doping Koch N, Leising G, Yu LM, Rajagopal A, Pireaux JJ, Johnson RL
299 - 305	Appearance potential mass spectrometry: Discrimination of dissociative ionization products Singh H, Coburn JW, Graves DB
306 - 311	Electronic core levels of HgPX3 chalcogenophosphates Calareso C, Curro GM, Grasso V, Silipigni L
312 - 319	Secondary ion emission from molecular overlayers: Thiols on gold Rading D, Kersting R, Benninghoven A
320 - 324	Structural analysis of Si(111)-7 x 7 domain boundaries with takayanaki cores Zhao YF, Zhang ZH, Yang HQ, Xue ZQ, Pang SJ
325 - 328	Photoemission studies of K-promoted oxidation of the GaAs(110) surface Lin G, Zhao TX, Liu HT, Yang HW, Ji MR
329 - 333	Effect of CaO addition on properties of ion-induced secondary electron emission of MgO films Cho J, Park JW
334 - 337	Desorption of fragment ions from condensed Si(OCH3)(4) by localized inner-shell electron excitation at the silicon, oxygen, and carbon K edges Baba Y, Sekiguchi T
338 - 342	Determination of atomic oxygen density with a nickel catalytic probe Sorli I, Rocak R
343 - 348	Apparatus for quantitative analysis of residual gases in flat panel vacuum packages Chalamala BR, Uebelhoer D, Dean KA
349 - 355	New combination of a three-component gas, Ne-Xe-Ar, for a high efficiency plasma display panel Min BK, Lee SH, Park HG
356 - 360	Wide band gap amorphous hydrogenated carbon films grown by plasma enhanced chemical vapor deposition Convertino A, Visconti P, Cingolani R
361 - 366	Growth characteristics and deposition mechanism of SrTiO3 thin films by plasma enhanced metalorganic chemical vapor deposition Kim DO, Choi RJ, Nahm KS, Hahn YB
367 - 371	Thickness distribution of large-area diamondlike carbon films formed by CH4/H-2 supermagnetron plasma chemical vapor deposition with application of a stationary magnetic field Kinoshita H, Nomura S, Honda M
372 - 376	A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films Yota J, Hander J, Saleh AA
377 - 384	Plasma enhanced chemical vapor deposition of fluorocarbon thin films via CF3H/H-2 chemistries: Power, pressure, and feed stock composition studies Senkevich JJ, Sherrer DW
385 - 387	Anisotropic plasma etching of polymers using a cryo-cooled resist mask Schuppert B, Brose E, Petermann K, Moosburger R
388 - 392	Improvement in downflow etching rate using Au as a catalyst Kataoka Y, Shinmura T, Kanoh M
393 - 400	Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O-2 and H2O as additive gases Tonnis EJ, Graves DB, Vartanian VH, Beu L, Lii T, Jewett R
401 - 404	Effects of chemical etching with sulfuric acid on glass surface Jang HK, Chung YD, Whangbo SW, Lee YS, Lyo IW, Whang CN, Lee SJ, Kim G
405 - 410	Application of direct bias control in high-density inductively coupled plasma etching equipment Patrick R, Baldwin S, Williams N
411 - 416	On the active surface layer in CF3+ etching of Si: Atomistic simulation and a simple mass balance model Abrams CF, Graves DB
417 - 422	Use of neural networks to model low-temperature tungsten etch characteristics in high density SF6 plasma Kim B, Sun JH, Choi CJ, Lee DD, Seol YS
423 - 434	Study of the ignition behavior of a pulsed dc discharge used for plasma-assisted chemical-vapor deposition Beer TA, Laimer J, Stori H
435 - 437	Compounds of the CdTe-In2Te3 system in CdTe-In film grown by the close-spaced vapor transport technique combined with free evaporation Hernandez MP, Iribarren A, Torres MZ, Bartolo P, Sosa V, Pena JL
438 - 449	Studies of heteroepitaxial growth of thin II-VI semiconductor layers by sequential ultrahigh vacuum dosing Luo Y, Han M, Slater DA, Osgood RM
450 - 456	Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy Myoung JM, Kim K
457 - 460	Characteristics of BeTe films grown by molecular beam epitaxy Cho MW, Chang JH, Saeki S, Wang SQ, Yao T
461 - 464	Growth of GaNAs by molecular beam expitaxy using a N-2/Ar rf plasma Gotthold DW, Govindaraju S, Mattord T, Holmes AL, Streetman BG
465 - 469	Characterization of magnesium fluoride thin films deposited by direct electron beam evaporation Dumas L, Quesnel E, Robic JY, Pauleau Y
470 - 476	Nondestructive characterization of thin silicides using x-ray reflectivity Detavernier C, De Gryse R, Van Meirhaeghe RL, Cardon F, Ru GP, Qu XP, Li BZ, Donaton RA, Maex K
477 - 484	Single shot laser damage in ultraviolet mirrors with a stepwise reflectivity profile Diso D, Perrone MR, Piegari A, Protopapa ML, Scaglione S
485 - 491	Photoinduced dichroism and its low-temperature characteristics in obliquely deposited amorphous As-Ge-Se-S thin films Lee HY, Chun JY, Yeo CH, Chung HB
492 - 496	Removal conditions for trapped microparticles in a stored electron beam using electrostatic electrodes Saeki H, Momose T
497 - 502	Measurements of rf bias effect in a dual electron cyclotron resonance-rf methane plasma using the Langmuir probe method Hong JG, Granier A, Leteinturier C, Peignon MC, Turban G
503 - 508	Dynamic simulations of pulsed reactive sputtering processes Jonsson LB, Nyberg T, Berg S
509 - 514	Study on nanosized TiO/WO3 thin films achieved by radio frequency sputtering Guidi V, Comini E, Ferroni M, Martinelli G, Sberveglieri G
515 - 523	Bonding and morphology study of carbon nitride films obtained by dual ion beam sputtering Quiros C, Prieto P, Fernandez A, Elizalde E, Morant C, Schlogl R, Spillecke O, Sanz JM
524 - 528	Mechanical properties of titanium nitride coatings deposited by inductively coupled plasma assisted direct current magnetron sputtering Lim JW, Park HS, Park TH, Lee JJ, Joo J
529 - 535	Role of the surface roughness in laser induced crystallization of nanostructured silicon films Hadjadj A, Boufendi L, Huet S, Schelz S, Cabarrocas PRI, Estrade-Szwarckopf H, Rousseau B
536 - 542	Epitaxial growth and surface structure of cuprous halide thin films Wake T, Saiki K, Koma A
543 - 551	Three-dimensional flow analysis of spiral-grooved turbo booster pump in slip and continuum flow Cheng HP, Jou RY, Chen FZ, Chang YW, Iwane M, Hanaoka T
552 - 553	Hermetic indium metal-to-glass-tube seal Lenzen M, Collins RE
554 - 556	Characterization of plasma deposited Ta2O5 films using grazing incidence x-ray scattering Four S, Devine RAB, Brunel M
557 - 559	Molybdenum-ruthenium/beryllium multilayer coatings Bajt S
560 - 562	Investigation of persistent photoconductivity in a Ge-doped ZnSe epilayer Zhang L, Dai N, Hu GJ, Chen LY, Tamargo MC
563 - 566	Simple self-selective method of velocity measurement for particles in impact-based deposition Lebedev M, Akedo J, Mori K, Eiju T
567 - 569	Cryogenic ultrahigh vacuum manipulator for angle dependent x-ray photoelectron spectroscopy studies Hawkridge AM, Gardella JA, Sagerman GR
573 - 573	Papers from the Ninth Canadian Semiconductor Technology Conference - 10-13 August 1999 - The Chateau Laurier Hotel Ottawa, Canada - Preface Janz S, Das SR, Landheer D
574 - 577	Optical breakdown of InGaAsP/InP based multiquantum well optical attenuators Boudreau M, Yan J, Hobbs L
578 - 581	Widely tunable self-assembled quantum dot lasers Hinzer K, Allen CN, Lapointe J, Picard D, Wasilewski ZR, Fafard S, Thorpe AJS
582 - 587	Light absorption in a resistive-gate GaAs charge-coupled device Hu S, Cresswell JV, Bryman DA, Kwok HL
588 - 592	Si/Si1-xGex photodetectors using three-dimensional growth modes to enhance photoresponse at lambda=1550 nm Janz S, Baribeau JM, Lockwood DJ, McCaffrey JP, Moisa S, Rowell NL, Xu DX, Lafontaine H, Pearson MRT
593 - 596	Selective doping of multilayer organic light emitting devices Lam J, Gorjanc TC, Tao Y, D'Iorio M
597 - 600	Effect of interface states on the performance of GaAs p(+)-i far-infrared detectors Perera AGU, Shen WZ, Ershov M, Liu HC, Buchanan M, Gunapala SD, Bandara SV, Liu JK, Ye HH, Schaff WJ
601 - 604	Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors Shen A, Liu HC, Buchanan M, Gao M, Szmulowicz F, Brown GJ, Ehret J
605 - 609	Optical properties of semiconductor heterostructures for active photonic device modeling Tolstikhin VI
610 - 614	Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach Xiao YGG, Deen MJ
615 - 620	Photoconductor selection for digital flat panel x-ray image detectors based on the dark current Kasap SO, Rowlands JA
621 - 625	Photoresponse of photodiode arrays for solid-state image sensors Lee JS, Hornsey RI
626 - 629	Double-gated microtip emitters for brighter field-emission displays Py C, Gao M, Das SR, Grant P, Marshall P, LeBrun L
630 - 634	Ultrafast silicon based photodetectors Buchal C, Loken M, Lipinsky T, Kappius L, Mantl S
635 - 638	Room temperature YBaCuO microbolometers Phong LN, Qiu SN
639 - 642	X-ray phosphor deposition technology for co-integration with amorphous silicon imaging arrays Gu ZH, Tao S, Chan I, Nathan A
643 - 647	Infrared characterization of GaN and GaN/AlGaN molecular beam epitaxial layers Bardwell JA, Dharma-Wardana MWC, Tang H, Webb JB
648 - 651	Growth mechanisms and modeling for metalorganic chemical vapor deposition selective-area epitaxy on InP substrates Greenspan JE, Zhang X, Puetz N, Emmerstorfer B
652 - 655	Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy Tang H, Webb JB, Bardwell JA, MacElwee T
656 - 660	Copper electroplating for future ultralarge scale integration interconnection Gau WC, Chang TC, Lin YS, Hu JC, Chen LJ, Chang CY, Cheng CL
661 - 664	1/f noise in p-type amorphous silicon Johanson RE, Kasap SO, Gaspari F, Yeghikyan D, Zukotynski S
665 - 670	Growth characteristics of vacuum coated thick a-Se films for device applications Juhasz C, Gembala V, Kasap SO
671 - 675	Parameters of vacuum deposition of ZnS : Mn active layer for electroluminescent displays Krasnov AN, Hofstra PG, McCullough MT
676 - 680	Electrical characterization of metal-oxide-semiconductor capacitors with anodic and plasma-nitrided oxides Landsberger LM, Ghayour R, Sayedi M, Kahrizi M, Landheer D, Bardwell JA, Riopel Y, Jean C, Logiudice V
681 - 684	Study of the effect of layer thickness, beam energy, and metal density on the resistless silicide direct-write electron-beam lithography process for the fabrication of nanostructures Lavallee E, Beauvais J, Drouin D, Corbin J
685 - 687	Optimization of n(+) mu c-Si : H contact layer for low leakage current in a-Si : H thin film transistors Murthy RVR, Servati P, Nathan A, Chamberlain SG
688 - 692	Intrinsic thin film stresses in multilayered imaging pixels Park B, Karim KS, Nathan A
693 - 696	Annealing studies on monocrystalline CuInSe2 used as substrates in photovoltaic cells Champness CH, Ahmad GI
697 - 700	Surface passivation of InGaAs for heterojunction bipolar transistor applications Driad R, McKinnon WR, Lu ZH, McAlister SP, Poole PJ, Charbonneau S
701 - 704	Photoluminescence and Hall effect measurements of Te segregation in Te-doped GaSb grown in terrestrial and microgravity conditions Labrie D, O'Brien J, Redden RF, Audet N, Lent B, Micklethwaite WF
705 - 708	Laser infrared photothermal radiometry of electronic solids: Principles and applications to industrial semiconductor Si wafers Mandelis A, Riopel Y
709 - 712	Magnetic field induced changes in electron states of a superlattice Paranjape VV
713 - 716	Study of doping concentration variation in InGaAs/InP high electron mobility transistor layer structures by Raman scattering Radhakrishnan K, Patrick THK, Zheng HQ, Zhang PH, Yoon SF
717 - 719	Secondary defects engineering in c-Si: Influence of implantation dose, temperature, and oxygen concentration Poirier R, Schiettekatte F, Roorda S, Fortin MO
720 - 723	Evaluation of single- and multilayered amorphous tantalum nitride thin films as diffusion barriers in copper metallization Chen GS, Chen ST, Yang LC, Lee PY
724 - 729	Ultrathin oxynitride formation by low energy ion implantation Khoueir A, Lu ZH, Ng WT, Ma Y
730 - 733	Fabrication of parallel quantum point contacts with submicron airbridges Feng Y, Sachrajda AS, Zawadzki P, Kolind S, Buchanan M, Smet JH, Lapointe J, Marshall PA
734 - 737	Residual strain and resultant postrelease deflection of surface micromachined structures Hubbard T, Wylde J
738 - 742	Dual-doped TMAH silicon etchant for microelectromechanical structures and systems applications Paranjape M, Pandy A, Brida S, Landsberger L, Kahrizi M, Zen M
743 - 745	Silicon micromachining for millimeter-wave applications Guillon B, Grenier K, Pons P, Cazaux JL, Lalaurie JC, Cros D, Plana R
746 - 749	Bistable microelectrothermal actuator in a standard complementary metal-oxide-semiconductor process Ressejac IC, Landsberger LM, Currie JF
750 - 753	Fabrication of high performance GaN modulation doped field effect transistors Bardwell JA, Foulds I, Lamontagne B, Tang H, Webb JB, Marshall P, Rolfe SJ, Stapledon J, MacElwee TW
754 - 756	Temperature distribution over a GaAs heterojunction bipolar transistor measured by fluorescent microthermal imaging Boyer N, Oliver B, Hagley A, Masson DP, Simard-Normandin M, Meunier M
757 - 760	Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters Chen CH, Deen MJ
761 - 764	Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors Dvorak MW, Matine N, Bolognesi CR, Xu XG, Watkins SP
765 - 769	Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal-oxide-semiconductor field effect transistors Kwan WS, Chen CH, Deen MJ
770 - 774	The temperature dependence of the dc characteristics of silicon germanium bipolar transistors McAlister SP, Kovacic S, Renaud A, Zhou ZF
775 - 779	Application of the traditional compact expressions for estimating the regional signal-delay times of heterojunction bipolar transistors Pulfrey DL, Fathpour S, St Denis A, Vaidyanathan M, Hagley WA, Surridge RK
780 - 782	120 degrees C fabrication technology for a-Si : H thin film transistors on flexible polyimide substrates Sazonov A, Nathan A
783 - 786	Scaling the SiGe channel pmetal-oxide-semiconductor field effect transistor: The case for p plus SiGe gates Wong DM, Tarr NG
787 - 792	Two-dimensional simulation of the transient electrothermal effects during the gate turn-off thyristor turn-off Mezroua FZ, Abid R