Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.12, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (102 articles)

2263 - 2279	Review of Secondary-Ion Mass-Spectrometry Characterization of Contamination Associated with Ion-Implantation Stevie FA, Wilson RG, Simons DS, Current MI, Zalm PC
2280 - 2292	Schottky-Barrier Study of Ion-Implantation Damage in GaAs Wang YG, Ashok S
2293 - 2298	Temperature-Dependence of Photoluminescence Linewidth in GaAs/GaAsP Strained-Layer Quantum-Well Structures Zhang XN, Shiraki Y, Yaguchi H, Onabe K, Ito R
2299 - 2304	Optical-Properties of InAs/InP Surface-Layers Formed During the Arsenic Stabilization Process Tabata A, Benyattou T, Guillot G, Gendry M, Hollinger G, Viktorovitch P
2305 - 2309	FEP Precipitates in Hydride-Vapor Phase Epitaxially Grown Inpfe Luysberg M, Gobel R, Janning H
2310 - 2321	Comparison of Advanced Plasma Sources for Etching Applications .1. Etching Rate, Uniformity, and Profile Control in a Helicon and a Multiple Electron-Cyclotron-Resonance Source Tepermeister I, Blayo N, Klemens FP, Ibbotson DE, Gottscho RA, Lee JT, Sawin HH
2322 - 2332	Comparison of Advanced Plasma Sources for Etching Applications .2. Langmuir Probe Studies of a Helicon and a Multipole Electron-Cyclotron-Resonance Source Tepermeister I, Ibbotson DE, Lee JT, Sawin HH
2333 - 2341	Comparison of Advanced Plasma Sources for Etching Applications .3. Ion Energy-Distribution Functions for a Helicon and a Multipole Electron-Cyclotron-Resonance Source Gibson GW, Sawin HH, Tepermeister I, Ibbotson DE, Lee JT
2342 - 2346	Effects of Substrate-Temperature and Bias Potential on Hydrogen Plasma-Etching of Silicon Ishii M, Nakashima K, Hayakawa T, Tajima I, Yamamoto M
2347 - 2351	Analytic Models for Plasma-Assisted Etching of Semiconductor Trenches Abrahamshrauner B
2352 - 2355	Reactive Ion Etching of Ta-Si-N Diffusion-Barriers in Cf4+o2 Mclane GF, Casas L, Reid JS, Kolawa E, Nicolet MA
2356 - 2360	Fabrication of Ultrafine Anisotropic SiO2 Mask by the Combination of Electron-Beam Lithography and SF6 Reactive Ion-Beam Etching Using Aluminum Lift-Off Technique Nishibe T
2361 - 2371	Resist Pattern Fluctuation Limits in Extreme-Ultraviolet Lithography Scheckler EW, Ogawa T, Yamanashi H, Soga T, Ito M
2372 - 2375	Radiation Stability of SiO2-Antireflective Film-Coated Sin and SiC X-Ray Mask Membranes Arakawa T, Okuyama H, Yamashita Y, Syoki T, Nagasawa H, Yamaguchi Y, Matsuo T, Noguchi F
2376 - 2379	Effect of MeV Electron-Irradiation on Gold Atom Implantation into Silicon-Carbide and Silicon-Nitride Mori H, Sakata T, Yasuda H, Maeda M
2380 - 2387	Cost Estimates for Commercial Plasma Source Ion-Implantation Rej DJ, Alexander RB
2388 - 2393	Microfabrication by Ion Milling - The Lathe Technique Vasile MJ, Biddick C, Schwalm SA
2394 - 2399	Laser System for Fine-Pitch Tape Automated Bonding Economikos L
2400 - 2404	Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N2O Wu YL, Hwu JG
2405 - 2408	In-Situ Sputter Cleaning of Vias Using a Getter Electrode Bauer HJ
2409 - 2413	Sodium Contamination Free Ashing Process Using O2+h2O Plasma Downstream Fujimura S, Suzuki MT, Shinagawa K, Nakamura M
2414 - 2421	Glow-Discharge Processing to Enhance Field-Emitter Array Performance Schwoebel PR, Spindt CA
2422 - 2428	Ballistic-Electron-Emission Microscopy on the Au/N-Si(111)7X7 Interface Cuberes MT, Bauer A, Wen HJ, Vandre D, Prietsch M, Kaindl G
2429 - 2433	Deposition and Subsequent Removal of Single Si Atoms on the Si(111)-7X7 Surface by a Scanning Tunneling Microscope Huang DH, Uchida H, Aono M
2434 - 2436	Scanning-Tunneling-Microscopy Observation of Al-Induced Reconstructions of the Si(111) Surface - Growth Dynamics Yoshimura M, Takaoka K, Yao T, Sueyoshi T, Sato T, Iwatsuki M
2437 - 2439	Investigation of Porous Silicon by Scanning-Tunneling-Microscopy and Atomic-Force Microscopy Yu T, Laiho R, Heikkila L
2440 - 2442	Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon PN-Doping Superlattices in Nitrogen and in Air Teuschler T, Hundhausen M, Eckstein R, Ley L
2443 - 2450	Study of Dislocations in ZnSe and ZnS by Scanning Force Microscopy Nickolayev O, Petrenko VF
2451 - 2455	Statics and Dynamics of Ferroelectric Domains Studied with Scanning Force Microscopy Luthi R, Haefke H, Gutmannsbauer W, Meyer E, Howald L, Guntherodt HJ
2456 - 2458	Topography of Brittle-Fracture Surfaces of Titanium Aluminide Alloy as Revealed by a Scanning Tunneling Microscope Wang Z, Bai C, Dai C, Huang G, Zhang P, Zhang Y, Chu W, Qiao L, Wang Y
2459 - 2461	Scanning Tunneling Microscope Observation on the Surface of Iron Meteorite Zhang LP, Hu J, Xu L, Yao XW, Zhang GG, Zhang Y, Xu YL, Li MQ, Li ZH, Xie XD, Xu YF, Zhang DT
2462 - 2464	Design of an Atom-Cluster Generator for a Transmission Electron-Microscope and in-Situ Observation of the Deposition Process of Large Atom Clusters Mori H, Fujii K, Komatsu M, Miyauchi K
2465 - 2466	Flexible-Diaphragm Force Microscope Rice P, Moreland J
2469 - 2469	Papers from the 21st Annual Conference on the Physics and Chemistry of Semiconductor Interfaces - 24-28 January 1994 Mohonk-Mountain-House New-Paltz, New-York - Preface Wolford DJ, Dow JD, Aspnes DE
2470 - 2474	Theoretical-Study of the Band Offsets at GaN/AlN Interfaces Albanesi EA, Lambrecht WR, Segall B
2475 - 2479	Angle-Resolved Photoemission of Diamond (111) and (100) Surfaces - Negative Electron-Affinity and Band-Structure Measurements Vanderweide J, Nemanich RJ
2480 - 2483	Electrical-Properties of Blue-Green Diode-Lasers Fan Y, Grillo DC, Ringle MD, Han J, He L, Gunshor RL, Salokatve A, Jeon H, Hovinen M, Nurmikko AV, Hua GC, Otsuka N
2484 - 2492	Optical 2nd-Harmonic Generation - A Probe of Atomic-Structure and Bonding at Si-SiO2 Interfaces, and Other Chemically-Modified Si Surfaces Emmerichs U, Meyer C, Bakker HJ, Wolter F, Kurz H, Lucovsky G, Bjorkman CE, Yasuda T, Ma Y, Jing Z, Whitten JL
2493 - 2499	Synchrotron-Radiation X-Ray Photoelectron-Spectroscopy Study of Hydrogen-Terminated Si Surfaces and Their Oxidation Mechanism Yamamoto K, Hasegawa M
2500 - 2503	X-Ray Photoelectron-Spectroscopy and X-Ray-Absorption Near-Edge Spectroscopy Study of SiO2/Si(100) Tao Y, Lu ZH, Graham MJ, Tay SP
2504 - 2510	Deposition of Single-Phase, Homogeneous Silicon Oxynitride by Remote Plasma-Enhanced Chemical-Vapor-Deposition, and Electrical Evaluation in Metal-Insulator-Semiconductor Devices Ma Y, Lucovsky G
2511 - 2515	Structure of Oxygen-Doped Silicon Grown by Chemical-Vapor-Deposition at Low-Temperature Lilientalweber Z, Schwartz PV, Wu CC, Sturm JC
2516 - 2520	Structural and Optical-Properties of Self-Assembled InGaAs Quantum Dots Leonard D, Fafard S, Pond K, Zhang YH, Merz JL, Petroff PM
2521 - 2526	Scanning Tunneling Microscope and Electron-Beam-Induced Luminescence in Quantum Wires Samuelson L, Gustafsson A, Lindahl J, Montelius L, Pistol ME, Malm JO, Vermeire G, Demeester P
2527 - 2531	Strained-Layer Epitaxy - How Do Capping Layers and Oppositely Strained Intermediate Layers Enhance the Critical Thickness Lefebvre I, Priester C, Lannoo M, Hollinger G
2532 - 2540	Real-Time Scanning Microprobe Reflection High-Energy Electron-Diffraction Observations of InGaAs Surfaces During Molecular-Beam Epitaxy on InP Substrates Morishita Y, Goto S, Nomura Y, Tamura M, Isu T, Katayama Y
2541 - 2546	Monolayer Growth Oscillations and Surface-Structure of GaAs(001) During Metalorganic Vapor-Phase Epitaxy Growth Reinhardt F, Jonsson J, Zorn M, Richter W, Ploska K, Rumberg J, Kurpas P
2547 - 2551	ZnSe Nucleation on the GaAs(001)Se-(2X1) Surface Observed by Scanning-Tunneling-Microscopy Li D, Pashley MD
2552 - 2557	Investigation of Spontaneous Ordering in GaInP Using Reflectance Difference Spectroscopy Luo JS, Olson JM, Bertness KA, Raikh ME, Tsiper EV
2558 - 2561	Identification of Ordered and Disordered Ga0.51In0.49P Domains by Spatially-Resolved Luminescence and Raman-Spectroscopy Krost A, Esser N, Selber H, Christen J, Richter W, Bimberg D, Su LC, Stringfellow GB
2562 - 2567	Molecular-Beam Epitaxy of InAs and Its Interaction with a GaAs Overlayer on Vicinal GaAs (001) Substrates Lin XW, Lilientalweber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Nabetani Y
2568 - 2573	Mechanisms of Strained Island Formation in Molecular-Beam Epitaxy of InAs on GaAs(100) Chen P, Xie Q, Madhukar A, Chen L, Konkar A
2574 - 2578	Growth-Mechanism of GaAs on (110) GaAs Studied by High-Energy Electron-Diffraction and Atomic-Force Microscopy Wassermeier M, Yang H, Tournie E, Daweritz L, Ploog K
2579 - 2583	Atomic Step Organization in Homoepitaxial Growth on GaAs(111)B Substrates Schowalter LJ, Yang K, Thundat T
2584 - 2586	Molecular-Beam Epitaxial Heterostructures in the (311)A Orientation Hsu Y, Wang WI, Kuan TS
2587 - 2591	CdTe/GaAs(100) Heterojunctions - Growth Modification by Thin Silicon Interface Layers Cairns JW, Woolf DA, Bennett MR, Williams RH, Ballingall RA
2592 - 2597	Scanning-Tunneling-Microscopy of InAs/GaSb Superlattices - Subbands, Interface Roughness, and Interface Asymmetry Feenstra RM, Collins DA, Ting DZ, Wang MW, Mcgill TC
2598 - 2604	Light-Scattering-Studies of ZnSe/GaAs Heterostructures Talaat H, Elissa L, Negm S, Burstein E, Yeganeh MS, Yodh AG
2605 - 2609	Study of Surface Stoichiometry and Luminescence Efficiency of Near-Surface Quantum-Wells Treated by Hydrogen-Ions and Atomic-Hydrogen Chang YL, Widdra W, Yi SI, Merz J, Weinberg WH, Hu E
2610 - 2615	Comparative-Study of Cross-Sectional Scanning-Tunneling-Microscopy Spectroscopy on III-V Heterostructures and Homostructures - Ultrahigh Vacuum-Cleaved Versus Sulfide Passivated Smith AR, Gwo S, Sadra K, Shih YC, Streetman BG, Shih CK
2616 - 2620	Structural and Electronic-Properties of an Organic-Inorganic Semiconductor Interface - Ptcda GaAs(100) Hirose Y, Chen W, Haskal EI, Forrest SR, Kahn A
2621 - 2624	Optimization of Contacts and Mobilities for (001) Oriented 2-Dimensional Hole Gases Cheng TS, Johnston D, Middleton J, Strickland K, Hughes OH, Harris JJ, Foxon CT, Mellor CJ
2625 - 2628	Measurement of Heterojunction Band Offsets Using Ballistic-Electron-Emission Microscopy Oshea JJ, Sajoto T, Bhargava S, Leonard D, Chin MA, Narayanamurti V
2629 - 2633	In-Situ Study of Epitaxial CoSi2/Si(111) by Ballistic-Electron-Emission Microscopy Sirringhaus H, Lee EY, Vonkanel H
2634 - 2638	Lateral Variation in the Schottky-Barrier Height of Au/PtSi/(100)Si Diodes Talin AA, Williams RS, Morgan BA, Ring KM, Kavanagh KL
2639 - 2645	ZnSe(100) - The Surface and the Formation of Schottky Barriers with Al and Au Chen W, Kahn A, Soukiassian P, Mangat PS, Gaines J, Ponzoni C, Olego D
2646 - 2652	Probing the CaF2 Density-of-States at Au/CaF2/N-Si(111) Interfaces with Photoelectron-Spectroscopy and Ballistic-Electron-Emission Microscopy Cuberes MT, Bauer A, Wen HJ, Prietsch M, Kaindl G
2653 - 2659	Modification of Al/GaAs(001) Schottky Barriers by Means of Heterovalent Interface Layers Cantile M, Sorba L, Faraci P, Yildirim S, Biasiol G, Bratina G, Franciosi A, Miller TJ, Nathan MI, Tapfer L
2660 - 2666	Novel in-Situ Electrochemical Technology for Formation of Oxide-Free and Defect-Free Schottky Contact to GaAs and Related Low-Dimensional Structures Hashizume T, Schweeger G, Wu NJ, Hasegawa H
2667 - 2674	Dynamical Transmission Effects and Impact Ionization in Hot-Electron Transport Across Nisi2/Si(111)7X7 Interfaces Bauer A, Ludeke R
2675 - 2677	Relation Between Atomic-Structure and Surface-Stress Anisotropy - Calculations for the Clean Si(001) Surface Dabrowski J, Pehlke E, Scheffler M
2678 - 2683	1st-Principles Study of Zn-Stabilized and Se-Stabilized ZnSe(100) Surface Reconstructions Garcia A, Northrup JE
2684 - 2688	Reflectance Anisotropy of Reconstructed GaAs(001) Surfaces Morris SJ, Bass JM, Matthai CC, Milman V, Payne MC
2689 - 2693	Step Bunching and Step Equalization on Vicinal GaAs(001) Surfaces Pond K, Lorke A, Ibbetson J, Bresslerhill V, Maboudian R, Weinberg WH, Gossard AC, Petroff PM
2694 - 2698	Structural-Properties of the Na/Si(111)2X1 Surface Studied by Photoemission Extended X-Ray-Absorption Fine-Structures Mangat PS, Soukiassian P, Huttel Y, Hurych Z
2699 - 2704	Strict Thermal Nitridation Selectivity Between Si and Ge Used as a Chemical Probe of the Outermost Layer of Si1-xGex Alloys and Ge/Si(001) or Si/Ge(001) Heterostructures Aubel D, Diani M, Bischoff JL, Bolmont D, Kubler L
2705 - 2708	Aluminum on Si(100) - Growth and Structure of the 1st Layer Brocks G, Kelly PJ, Car R
2709 - 2712	Cs-Induced Highest E(F) Jump Above InAs(110) Conduction-Band Minimum Aristov VY, Lelay G, Soukiassian P, Hricovini K, Bonnet JE, Osvald J, Olsson O
2713 - 2719	Macroscopic Electronic Behavior and Atomic Arrangements of GaAs-Surfaces Immersed in HCl Solution Ishikawa Y, Ishii H, Hasegawa H, Fukui T
2721 - 2726	Do Manufacturing Technologies Need Federal-Policies Schmitt RW
2727 - 2740	Concepts in Competitive Microelectronics Manufacturing Liehr M, Rubloff GW
2741 - 2748	Film Interface Control in Integrated Processing Systems Granneman EH
2749 - 2751	Single-Wafer Process Integration for Submicron Structures Masnari NA
2752 - 2757	Applications of Computational Fluid-Dynamics for Improved Performance in Chemical-Vapor-Deposition Reactors Kotecki DE, Conti RA, Barbee SG, Cacouris TD, Chapplesokol JD, Eschbach RJ, Wilson DL, Wong J, Zuhoski SP
2758 - 2762	Mechanism of Particle Formation in the Sputtering and Reactive Ion Etching of Si and SiO2 Yoo WJ, Steinbruchel C
2763 - 2767	Causes of Anomalous Solid Formation in the Exhaust Systems of Low-Pressure Chemical-Vapor-Deposition and Plasma-Enhanced Chemical-Vapor-Deposition Semiconductor Processes Abreu RA, Troup AP, Sahm MK
2768 - 2778	Materials and Failure Analysis-Methods and Systems Used in the Development and Manufacture of Silicon Integrated-Circuits Diebold AC
2779 - 2784	High-Speed Spectral Ellipsometry for in-Situ Diagnostics and Process-Control Duncan WM, Henck SA, Kuehne JW, Loewenstein LM, Maung S
2785 - 2794	Statistical Metrology - At the Root of Manufacturing Control Bartelink DJ
2795 - 2799	Improving Productivity on a Single-Wafer Aluminum Ether by the Use of Total Productive Maintenance Hackenberg J, Flaim D
2800 - 2804	Gate Technology for 0.1-Mu-M Si Complementary Metal-Oxide-Semiconductor Using G-Line Exposure and Deep-Ultraviolet Hardening Jeon DY, Chin GM, Lee KF, Yan RH, Westerwick E, Cerullo M
2805 - 2809	Characterization of Plasma Etch Processes Using Measurements of Discharge Impedance Bose F, Patrick R, Baltes HP
2810 - 2817	1st-Wafer Effect in Remote Plasma Processing - The Stripping of Photoresist, Silicon-Nitride, and Polysilicon Loewenstein LM, Stefani JA, Butler SW
2818 - 2821	Repeated Compressive Stress Increase with 400 Degrees-C Thermal Cycling in Tantalum Thin-Films Due to Increases in the Oxygen-Content Cabral C, Clevenger LA, Schad RG
2822 - 2825	Thermal-Stability of Thin Poly-Si/Ta2O5/Tin Capacitors for Dynamic Random-Access Memory Applications Ishibashi K, Patnaik BK, Parikh NR, Sandhu GS, Fazan PC
2826 - 2829	Planarization of Aluminum Films by a Technique with the Combination of Molecular-Beam Deposition and Annealing for Ultralarge-Scale Integration Metallization Mukai R, Ozawa S
2830 - 2834	Application of a Dry Turbo Vacuum Pump to Semiconductor Manufacturing Processes Nagaoka T, Mase M
2835 - 2838	Integration of Materials and Processes for Reliable Silicon Interconnections Paraszczak J
2839 - 2847	Formation of Si-SiO2 Stacked-Gate Structures by Plasma-Assisted and Rapid-Thermal Processing - Improved Device Performance Through Process Integration Lucovsky G, Wortman JJ, Yasuda T, Xu XL, Misra V, Hattangady SV, Ma Y, Hornung B
2848 - 2851	Wafer-Scale Processing of InGaAsP/InP Lasers Dzioba S, Cook JP, Herak TV, Livermore S, Young M, Rousina R, Jatar S, Shepherd FR
2852 - 2859	The Adequat Project for Development and Transfer of 0.25 Mu-M Logic Complementary Metal-Oxide-Semiconductor Modules Dekeersmaecker R, Declerck G, Felix P, Haond M, Hill C, Janssen G, Lorenz J, Maes H, Montree A, Neppl F, Patruno P, Rudan M, Ryssel H, Vandenhove L, Vandervorst W, Vanommen A
2860 - 2867	Sensor Integration into Plasma Etch Reactors of a Developmental Pilot Line Barna GG, Loewenstein LM, Brankner KJ, Butler SW, Mozumder PK, Stefani JA, Henck SA, Chapados P, Buck D, Maung S, Saxena S, Unruh A