Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.18, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (90 articles)

1817 - 1824	Effects of surface oxides on field emission from silicon Shaw J
1825 - 1832	Studies on the interaction between thin film materials and Mo field emitter arrays Chalamala BR, Reuss RH
1833 - 1839	Emission sensitivity to tip position of Spindt-type field emitters Xie CG, Wei Y, Lucero R, Woodburn R
1840 - 1846	Electron field emission from amorphous carbon nitride synthesized by electron cyclotron resonance plasma Liu XW, Tsai SH, Lee LH, Yang MX, Yang ACM, Lin IN, Shih HC
1847 - 1852	Self-assembled gold silicide wires on bromine-passivated Si(110) surfaces Rout B, Sundaravel B, Das AK, Ghose SK, Sekar K, Mahapatra DP, Dev BN
1853 - 1857	Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100) surfaces underneath the tip of a scanning tunneling microscope Mai ZH, Lu YF, Huang SM, Chim WK, Pan JS
1858 - 1860	Enhancement of resolution of DNA on silylated mica using atomic force microscopy Tang J, Li JW, Wang C, Bai CL
1861 - 1865	New polymer materials for nanoimprinting Schulz H, Scheer HC, Hoffmann T, Torres CMS, Pfeiffer K, Bleidiessel G, Grutzner G, Cardinaud C, Gaboriau F, Peignon MC, Ahopelto J, Heidari B
1866 - 1873	Bilayer, nanoimprint lithography Faircloth B, Rohrs H, Tiberio R, Ruoff R, Krchnavek RR
1874 - 1885	Determination of coupled acid catalysis-diffusion processes in a positive-tone chemically amplified photoresist Houle FA, Hinsberg WD, Morrison M, Sanchez MI, Wallraff G, Larson C, Hoffnagle J
1886 - 1889	Statistical considerations of the overlay error in laser driven point source x-ray lithography Tiszauer DH
1890 - 1896	Comparison of Cl-2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source Tian WC, Weigold JW, Pang SW
1897 - 1902	Control of surface reactions in high-performance SiO2 etching Tatsumi T, Matsui M, Okigawa M, Sekine M
1903 - 1905	Electron cyclotron resonance plasma etching of InP through-wafer connections at > 4 mu m/min using Cl-2/Ar Chen YW, Ooi BS, Ng GI, Tan CL
1906 - 1910	Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching Jonsson LB, Westlinder J, Engelmark F, Hedlund C, Du J, Smith U, Blom HO
1911 - 1914	Anisotropic etching of RuO2 and Ru with high aspect ratio for gigabit dynamic random access memory Yunogami T, Nojiri K
1915 - 1918	Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers Ils A, Cantoni M, Sallese JM, Fazan P, Han JP, Guo X, Ma TP
1919 - 1922	Stability and chemical composition of thermally grown iridium-oxide thin films Chalamala BR, Wei Y, Reuss RH, Aggarwal S, Perusse SR, Gnade BE, Ramesh R
1923 - 1928	Effects of (Ba, Sr)TiO3 film thickness on electrical properties of (Ba, Sr)TiO3/(Ba, Sr)RuO3 capacitor Oh SH, Park KW, Park JH, Kim BS, Choi DK
1929 - 1936	Effects of composition and N-2 plasma treatment on the barrier effectiveness of chemically vapor deposited WSix films Wang MT, Chuang MH, Chen LJ, Chen MC
1937 - 1941	Study of forming a p(+) poly-Si gate by inductively coupled nitrogen plasma nitridation of the stacked poly-Si layers Juang MH
1942 - 1948	Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy Ru GP, Qu XP, Zhu SY, Li BZ, Detavernier C, Van Meirhaeghe RL, Cardon F, Donaton RA, Maex K
1949 - 1952	Effect of ramp rate on the C49 to C54 titanium disilicide phase transformation from Ti and Ti(Ta) Smith PM, Bailey G, Hu YZ, Tay SP
1953 - 1956	Mosaic structure of various oriented grains in CoSi2/Si(001) Kang TS, Je JH, Kim GB, Baik HK, Lee SM
1957 - 1961	Effect of the first antimony layer on AuZn ohmic contacts to p-type InP Yamaguchi A, Asamizu H, Okada T, Iguchi Y, Saitoh T, Koide Y, Murakami M
1962 - 1966	Design and implementation of optoelectronic interfaces for high-speed burst-mode transmissions Bende AB
1967 - 1972	Electroreflectance and photoreflectance studies of surface Fermi level and surface state densities of InPSIN+ structures Hwang WC, Cheng YJ, Wang YC, Hwang JS
1973 - 1979	Passivation of the Ge/InP(110) interface by As interlayers: Interface reactions and band offsets Preobrajenski AB, Schomann S, Gebhardt RK, Chasse T
1980 - 1990	Polarized laser light scattering applied to surface morphology characterization of epitaxial III-V semiconductor layers Gonzalez MU, Sanchez-Gil JA, Gonzalez Y, Gonzalez L, Mendez ER
1991 - 1996	Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates Martini S, Quivy AA, Tabata A, Leite JR
1997 - 2000	Structural and electrical properties of chemical vapor deposited diamond films doped by B+ implantation Wang SB, Zhang HX, Zhu P, Feng K
2001 - 2004	Preparation of C-60-doped silica aerogels and the study of photoluminescence properties Zhou B, Wang J, Zhao L, Shen J, Deng ZS, Li YF
2005 - 2007	Chlorination of Si surfaces under strain conditions Halicioglu T
2008 - 2010	Stability of boron and phosphorus implanted tungsten silicide structures at high temperatures Bashir R, Hebert F
2011 - 2015	Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applications Eisenbraun E, Upham A, Dash R, Zeng WX, Hoefnagels J, Lane S, Anjum D, Dovidenko K, Kaloyeros A, Arkles B, Sullivan JJ
2016 - 2020	Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers Rossnagel SM, Sherman A, Turner F
2021 - 2023	Observation of fine structures of nanodomains in donor-modified Pb(Zr,Ti)O-3 ferroelectrics Tan Q, Li JX
2024 - 2026	Sheet resistance nonuniformity for ionized titanium deposition Ross KA, Thimm P
2027 - 2029	Time-stability measurement and compensation of a scanning probe microscope instrument Huang WH, Wang WW, Xia AD, Jin N, Hu ZQ
2030 - 2030	Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering (vol 18, pg 144, 2000) Tanzer TA, Bohn PW, Roshchin IV, Greene LH
2033 - 2033	Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - 16-20 January 2000 Salt Lake City, Utah - Preface Rowe JE, Palmstrom CJ
2034 - 2038	Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors Kleiman RN, O'Malley ML, Baumann FH, Garno JP, Timp GL
2039 - 2043	Ferromagnetic III-V heterostructures Ohno H
2044 - 2046	Nickel layers on indium arsenide Hill CJ, Beach RA, McGill TC
2047 - 2051	Interfacial scattering of hot electrons in ultrathin Au/Co films Lu RP, Morgan BA, Kavanagh KL, Powell CJ, Chen PJ, Serpa FG, Egelhoff WF
2052 - 2056	Ferromagnetic MnAs grown on GaAs(001): In situ investigations Kastner M, Schippan F, Schutzendube P, Daweritz L, Ploog K
2057 - 2062	Epitaxial ferromagnetic metal/GaAs(100) heterostructures Chen LC, Dong JW, Schultz BD, Palmstrom CJ, Berezovsky J, Isakovic A, Crowell PA, Tabat N
2063 - 2065	Enhanced magneto-optical effect in a GaAs : MnAs nanoscale hybrid structure combined with GaAs/AlAs distributed Bragg reflectors Shimizu H, Miyamura M, Tanaka M
2066 - 2071	Strain relaxation of InGaAs by lateral oxidation of AlAs Mathis SK, Chavarkar P, Andrews AM, Mishra UK, Speck JS
2072 - 2076	Scanning tunneling microscopy study of organometallic molecules adsorbed on a GaAs(001)-2X4 surface Kuramochi H, Cui J, Iwai H, Ozeki M
2077 - 2081	Reflectance anisotropy spectroscopy of the growth of perylene-3,4,9,10-tetracarboxylic dianhydride on chalcogen passivated GaAs(001) surfaces Kampen TU, Rossow U, Schumann M, Park S, Zahn DRT
2082 - 2087	Schottky barrier height and electron affinity of titanium on AIN Ward BL, Hartman JD, Hurt EH, Tracy KM, Davis RF, Nemanich RJ
2088 - 2095	Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces Shaw MJ, Corbin EA, Kitchin MR, Hagon JP, Jaros M
2096 - 2099	Interface control and band offset at the Ga0.52In0.48P an GaAs heterojunction Cai C, Nathan MI
2100 - 2108	Effects of gap states an scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy Hasegawa H, Negoro N, Kasai S, Ishikawa Y, Fujikuwa H
2109 - 2113	Spin-dependent resonant tunneling in double-barrier magnetic heterostructures Petukhov AG, Demchenko DO, Chantis AN
2114 - 2118	Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs Berthod C, Binggeli N, Baldereschi A
2119 - 2127	Tunable Schottky barrier contacts to InxGa1-xAs Marinelli C, Sorba L, Lazzarino M, Kumar D, Pelucchi E, Muller BH, Orani D, Rubini S, Franciosi A, De Franceshi S, Beltran F
2128 - 2138	Photoemission results on intralayer insertion at III-V/III-V junctions: A critical appraisal of the different interpretations Moreno M, Alonso M, Horicke M, Hey R, Horn K, Sacedon JL, Ploog KH
2139 - 2145	Epitaxial oxide thin films on Si(001) Yu Z, Ramdani J, Curless JA, Overgaard CD, Finder JM, Droopad R, Eisenbeiser KW, Hallmark JA, Ooms WJ, Kaushik VS
2146 - 2152	Epitaxial thin films of MgO an Si using metalorganic molecular beam epitaxy Niu F, Hoerman BH, Wessels BW
2153 - 2159	Hot carrier transport effects in Al2O3-based metal-oxide-semiconductor structures Ludeke R, Cuberes MT, Cartier E
2160 - 2164	Mechanism of dopant segregation to SiO2/Si(001) interfaces Dabrowski J, Casali RA, Mussig HJ, Baierle R, Caldas MJ, Zavodinsky V
2165 - 2168	Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy Gotoh M, Sudoh K, Iwasaki H
2169 - 2173	E' centers and leakage currents in the gate oxides of metal oxide silicon devices Lenahan PM, Mele JJ
2174 - 2178	Photoemission spectroscopy of platinum overlayers on silicon dioxide films Keister JW, Rowe JE, Kolodziej JJ, Madey TE
2179 - 2186	Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics Lucovsky G, Yang H, Niimi H, Thorpe MF, Phillips JC
2187 - 2192	Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices Stangl J, Roch T, Holy V, Pinczolits M, Springholz G, Bauer G, Kegel I, Metzger TH, Zhu J, Brunner K, Abstreiter G, Smilgies D
2193 - 2196	Controlled ordering and positioning of InAs self-assembled quantum dots Lee H, Johnson JA, Speck JS, Petroff PM
2197 - 2203	Growth and microstructure of self-assembled ErAs islands in GaAs Kadow C, Johnson JA, Kolstad K, Ibbetson JP, Gossard AC
2204 - 2209	Evolution of Si-on-GaAs (001) surface morphology towards self-organized ordered Si structures Wang ZM, Daweritz T, Schutzendube P, Ploog KH
2210 - 2214	Atomic structure and composition of the (2X4) reconstruction of InGaP(001) Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N
2215 - 2223	Understanding reflectance anisotropy: Surface-state signatures and bulk-related features Schmidt WG, Bechstedt F, Bernholc J
2224 - 2228	In situ reflectance-difference spectroscopy of doped CdTe and ZnTe grown by molecular beam epitaxy Balderas-Navarro RE, Hingerl K, Hilber W, Stifter D, Bonanni A, Sitter H
2229 - 2231	Surface-induced optical anisotropy of Si and Ge Rossow U, Mantese L, Aspnes DE
2232 - 2241	In-plane optical anisotropy of quantum well structures: From fundamental considerations to interface characterization and optoelectronic engineering Cortez S, Krebs O, Voisin P
2242 - 2254	Optical properties of bulk and thin-film SrTiO3 on Si and Pt Zollner S, Demkov AA, Liu R, Fejes PL, Gregory RB, Alluri P, Curless JA, Yu Z, Ramdani J, Droopad R, Tiwald TE, Hilfiker JN, Woollam JA
2255 - 2262	Method for atomic-layer-resolved measurement of polarization fields by nuclear magnetic resonance Kempf JG, Weitekamp DP
2263 - 2270	ZnSe/CdTe/ZnSe heterostructures Rubini S, Bonanni B, Pelucchi E, Franciosi A, Garulli A, Parisini A, Zhuang Y, Bauer G, Holy V
2271 - 2273	Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates Yang Z, Sou IK, Chen YH
2274 - 2278	GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cell Zhang DH, Wang XZ, Zheng HQ, Shi W, Yoon SF, Kam CH
2279 - 2283	Interface tuning of the InAs/AlSb heterostructure-based quantum wells Ichizli VM, Mutamba K, Droba M, Sigurdardottir A, Hartnagel HL
2284 - 2289	Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy Chen HJ, Feenstra RM, Northrup JE, Zywietz T, Neugebauer J, Greve DW
2290 - 2294	Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy Ploog KH, Brandt O, Muralidharan R, Thamm A, Waltereit P
2295 - 2299	Point defect modification in wide band gap semiconductors through interaction with high-energy electrons: Is reflection high-energy electron diffraction truly benign? Myers TH, Ptak AJ, VanMil BL, Moldovan M, Treado PJ, Nelson MP, Ribar JM, Zugates CT
2300 - 2303	X-ray studies of group III-nitride quantum wells with high quality interfaces Fewster PF, Andrew NL, Hughes OH, Staddon C, Foxon CT, Bell A, Cheng TS, Wang T, Sakai S, Jacobs K, Moerman I
2304 - 2308	Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy Smith KV, Dang XZ, Yu ET, Redwing JM
2309 - 2312	Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures Young AP, Bae J, Brillson LJ, Murphy MJ, Schaff WJ
2313 - 2321	ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3 Hong SK, Ko HJ, Chen Y, Hanada T, Yao T
2322 - 2327	Polarization effects and transport in AlGaN/GaN system Zhang YF, Smorchkova Y, Elsass C, Keller S, Ibbetson J, DenBaars S, Mishra U, Singh J