Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.20, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (82 articles)

1287 - 1297	Miniature fuel cells for portable power: Design considerations and challenges Maynard HL, Meyers JP
1298 - 1302	Control of shape of silicon needles fabricated by highly selective anisotropic dry etching Kanechika M, Sugimoto N, Mitsushima Y
1303 - 1310	Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography Patsis GP, Glezos N
1311 - 1316	Wetting effect on gap filling submicron damascene by an electrolyte free of levelers Chang SC, Shieh JM, Lin KC, Dai BT, Wang TC, Chen CF, Feng MS, Li YH, Lu CP
1317 - 1320	Characterization of the crotalus durissus terrificus venom by atomic force microscopy Baranauskas V, Dourado DM, Zhao JG, da Cruz-Hofling MA
1321 - 1326	Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition Kim H, Cabral C, Lavoie C, Rossnagel SM
1327 - 1330	Effect of H-2 on the etch profile of InP/InGaAsP alloys in Cl-2/Ar/H-2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication Rommel SL, Jang JH, Lu W, Cueva G, Zhou L, Adesida I, Pajer G, Whaley R, Lepore A, Schellanbarger Z, Abeles JH
1331 - 1333	Silicon dioxide film with lower deposition temperature in hot-wall, single-type chamber Yoon S, Park H, Song J
1334 - 1338	Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment Mor YS, Chang TC, Liu PT, Tsai TM, Chen CW, Yan ST, Chu CJ, Wu WF, Pan FM, Lur W, Sze SM
1339 - 1341	Gallium nitride: Method of defect characterization by wet oxidation in an oxalic acid electrolytic cell Sundararajan SP, Crouse D, Lo YH
1342 - 1347	Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method Yoshizawa M, Moriya S
1348 - 1355	Electrical contrast observations and voltage measurements by Kelvin probe force gradient microscopy Girard P, Ramonda M, Saluel D
1356 - 1359	Molecular beam epitaxy of IV-VI mid-infrared vertical cavity surface-emitting quantum well laser structures Wu H, Zhao F, Jayasinghe L, Shi Z
1360 - 1363	Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices Kang H, Roh Y, Bae G, Jung D, Yang CW
1364 - 1367	Improved GaNxAs1-x quality grown by molecular beam pitaxy with dispersive nitrogen source Wang SZ, Yoon SF, Loke WK, Ng TK, Fan WJ
1368 - 1378	Structure and photoluminescence features of nanocrystalline Si/SiO2 films produced by plasma chemical vapor deposition and post-treatment Wu XC, Ossadnik C, Eggs C, Veprek S, Phillipp F
1379 - 1383	Getter requirements for a cathode ray tube with a diamond coated field emitter electron source Nemanic V, Zumer M, Zajec B, Tyler T
1384 - 1387	Impact of pitting defect on 0.25 mu m standard random access memory Chiu CM, Yen TF, Chiu KF
1388 - 1393	Improvements of characteristics of fluorinated dielectric films integrated as interlayer dielectrics Shieh JM, Tsai KC, Suen SC, Dai BT
1394 - 1401	Effects of a Ni cap layer on transparent-Ni/Au ohmic contacts to p-GaN Liu B, Lambers E, Alexander WB, Holloway PH
1402 - 1405	Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films Wei Y, Hu XM, Liang Y, Jordan DC, Craigo B, Droopad R, Yu Z, Demkov A, Edwards JL, Ooms WJ
1406 - 1409	Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology Nakajima A, Khosru QDM, Yoshimoto T, Kidera T, Yokoyama S
1410 - 1418	Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire Kim DH, Sung SK, Kim KR, Lee JD, Park BG
1419 - 1426	Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope Goldfarb I, Briggs GAD
1427 - 1430	Electrical characteristics of polycrystalline silicon thin film transistors using the Cu-field aided lateral crystallization process Kwon SY, Park KW, Lee JB, Choi DK
1431 - 1435	Thermal effects in atomic-order nitridation of Si by a nitrogen plasma Seino T, Muto D, Matsuura T, Murota J
1436 - 1443	Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF2 implantation in Si Bocchi C, Germini F, Ghezzi G, Gombia E, Mosca R, Nasi L, Mukhamedzhanov EK, Privitera V, Spinella C
1444 - 1447	Comparison of two different Ti/Al/Ti/Au ohmic metallization schemes for AlGaN/GaN Bardwell JA, Sproule GI, Liu Y, Tang H, Webb JB, Fraser J, Marshall P
1448 - 1451	Influence of in situ ultrasound treatment during ion implantation on amorphization and junction formation in silicon Kruger D, Romanyuk B, Melnik V, Olikh Y, Kurps R
1452 - 1456	Enhancement of implantation efficiency by grid biasing in radio-frequency inductively coupled plasma direct-current plasma immersion ion implantation Tong HH, Fu RKY, Zeng XC, Kwok DTK, Chu PK
1457 - 1464	Studieson the plasma localization of a magnetic neutral loop discharge using normalized radio frequency electric field Sung YM, Honda C
1465 - 1470	Process and realization of a three-dimensional gold electroplated antenna on a flexible epoxy film for wireless micromotion system Basset P, Kaiser A, Collard D, Buchaillot L
1471 - 1475	TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization Joseph S, Eizenberg M, Marcadal C, Chen L
1476 - 1481	Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H-2 plasma treatment Shieh JM, Tsai KC, Dai BT, Wu YC, Wu YH
1482 - 1488	Photoresist selectivity mechanism in SiO2 etching by inductively coupled plasma using fluorocarbon gases Imai S, Motomura H, Tachibana K
1489 - 1492	Formation of InAs/GaAs quantum dots by dewetting during cooling Mirin RP, Roshko A, van der Puijl M, Norman AG
1493 - 1495	Room temperature oscillation of self-organized In0.2Ga0.8As/GaAs quantum wire lasers grown on (221)A GaAs substrates by molecular beam epitaxy Kanamori H, Hyodo K, Ohno Y, Shimomura S, Hiyamizu S, Okamoto Y
1496 - 1500	Microstructural interpretation of Ni ohmic contact on n-type 4H-SiC Han SY, Shin JY, Lee BT, Lee JL
1501 - 1507	Magneto-photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots Menard S, Beerens J, Morris D, Aimez V, Beauvais J, Fafard S
1508 - 1513	Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing Boufnichel M, Aachboun S, Grangeon F, Lefaucheux P, Ranson P
1514 - 1521	Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H-2 and influence of the residence time Gaboriau F, Cartry G, Peignon MC, Cardinaud C
1522 - 1526	Ta and Ta-N diffusion barriers sputtered with various N-2/Ar ratios for Cu metallization Wang JH, Chen LJ, Lu ZC, Hsiung CS, Hsieh WY, Yew TR
1527 - 1536	Real-time spectro-ellipsometric characterization of Si/Si1-xGex multiple quantum wells grown on Si(100) substrates Akazawa H
1537 - 1541	Formation of Ag nanometer particles at the interface of Ag thin film and poly(ethylene terephthalate) substrate under visible light irradiation Fukuda S, Kawamoto S, Gotoh Y, Nozaki S, Nakaura M
1542 - 1547	Wafer temperature measurements during dielectric etching in a MERIE etcher Gabriel CT
1548 - 1555	Low temperature remote plasma cleaning of the fluorocarbon and polymerized residues formed during contact hole dry etching Seo H, Kim SB, Song J, Kim Y, Soh H, Kim YC, Jeon H
1556 - 1560	Impact ot the colloidal silica particle size on physical vapor deposition tungsten removal rate and surface roughness Bouvet D, Beaud P, Fazan P, Sanjines R, Jacquinot E
1561 - 1566	Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment Chang TC, Liu PT, Mor YS, Tsai TM, Chen CW, Mei YJ, Pan FM, Wu WF, Sze SM
1567 - 1569	Atomic resolution imaging of a single-crystal Cu (100) surface by scanning tunneling microscopy in ultrahigh vacuum at room temperature Zou ZQ, Dong ZC, Trifonov AS, Nejo H
1570 - 1573	Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma Chen J, Chen M, Dong YM, Wang X, Zheng ZH, Wang X
1574 - 1577	Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor Choi KJ, Jeon CM, Jang HW, Lee JL
1578 - 1578	Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography (vol B20, pg 710, 2002) Deshmukh PR
1581 - 1581	Papers from the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - 6-10 January 2002 - Santa Fe, New Mexico - Preface Yu ET, Aspnes DE
1582 - 1585	Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy Blattner AJ, Wessels BW
1586 - 1590	Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties Tari S, Sporken R, Aoki T, Smith DJ, Metlushko V, AbuEl-Rub K, Sivananthan S
1591 - 1599	Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4X4) surfaces Ludge K, Schultz BD, Vogt P, Evans MMR, Braun W, Palmstrom CJ, Richter W, Esser N
1600 - 1608	ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures Schultz BD, Farrell HH, Evans MMR, Ludge K, Palmstrom CJ
1609 - 1613	Characterization for strontium titinate/Fe3O4 and TiN/Fe3O4 interfaces Lussier A, Idzerda YU, Stadler S, Ogale SB, Shinde SR, Venkatesan V
1614 - 1619	Interactions of alkylamines with the silicon (001) surface Cao XP, Hamers RJ
1620 - 1625	Core level photoemission and scanning tunneling microscopy study of the interaction of pentacene with the Si(100) surface Hughes G, Roche J, Carty D, Cafolla T, Smith KE
1626 - 1639	Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy Brandt O, Waltereit P, Dhar S, Jahn U, Sun YJ, Trampert A, Ploog KH, Taglient MA, Tapfer L
1640 - 1646	Role of hydrogen in surface reconstructions and growth of GaN Van de Walle CG, Neugebauer J
1647 - 1655	Mechanism of anomalous current transport in n-type GaN Schottky contacts Hasegawa H, Oyama S
1656 - 1663	Control of ZnO film polarity Hong SK, Ko HJ, Chen YF, Yao T
1664 - 1670	Steps on the (001) SrTiO3 surface Zhang XD, Demkov AA
1671 - 1676	Scanning capacitance spectroscopy of an AlxGa1-xN/GaN heterostructure field-effect transistor structure: Analysis of probe tip effects Schaadt DM, Yu ET
1677 - 1681	Scanning tunneling potentiometry of semiconductor junctions Dong Y, Feenstra RM, Hey R, Ploog KH
1682 - 1689	Scanning spreading resistance microscopy current transport studies on doped III-V semiconductors Lu RP, Kavanagh KL, Dixon-Warren SJ, SpringThorpe AJ, Streater R, Calder I
1690 - 1698	Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering McConville CF, Al-Harthi SH, Dowsett MG, Gard FS, Ormsby TJ, Guzman B, Noakes TCQ, Bailey P
1699 - 1705	Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces Wang JFT, Powell GD, Johnson RS, Lucovsky G, Aspnes DE
1706 - 1709	Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si : SiO2 interface Yang JM, de la Garza L, Thornton TJ, Kozicki M, Gust D
1710 - 1719	Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes Whitten JL, Zhang Y, Menon M, Lucovsky G
1720 - 1725	Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance Stesmans A, Afanas'ev VV
1726 - 1731	Electronic states at the interface of Ti-Si oxide on Si(100) Fulton CC, Lucovsky G, Nemanich RJ
1732 - 1738	Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications Ulrich MD, Johnson RS, Hong JG, Rowe JE, Lucovsky G, Quinton JS, Madey TE
1739 - 1747	Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys Lucovsky G, Zhang Y, Rayner GB, Appel G, Ade H, Whitten JL
1748 - 1758	Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films Rayner GB, Kang D, Zhang Y, Lucovsky G
1759 - 1765	Surface and interface properties of In0.8Ga0.2As metal-insulator-semiconductor structures Wieder HH, Sari H
1766 - 1770	Plasmon damping in molecular beam epitaxial-grown InAs(100) Veal TD, Bell GR, McConville CF
1771 - 1776	Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy Brown T, Brown A, May G
1777 - 1780	Valence band offset at the CdS/CdTe interface Boieriu P, Sporken R, Sivananthan S
1781 - 1787	Ballistic electron emission microscopy studies of ZnSe-BeTe heterojunctions Chahboun A, Fink V, Fleischauer M, Kavanagh KL, Lu RP, Hansen L, Becker CR, Molenkamp LW