Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.23, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (86 articles)

L5 - L8	Dynamically ordered thin film nanoclusters Zhang W, Zhang C, Kalyanaraman R
L9 - L12	Ideally ordered anodic porous alumina with Sub-50 nm hole intervals based on imprinting using metal molds Yasui K, Nishio K, Nunokawa H, Masuda H
1351 - 1360	Scanning tunneling microscopy single atom/molecule manipulation and its application to nanoscience and technology Hla SW
1361 - 1363	Optical waveguide loss induced by metal cladding Lin J, Leven A, Reyes R, Chen YK, Choa FS
1364 - 1370	Chemical patterning for the highly specific and programmed assembly of nanostructures Kannan B, Kulkarni RP, Satyanarayana S, Castelino K, Majumdar A
1371 - 1375	Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator Patsis GP, Gogolides E
1376 - 1378	Growth and magnetic properties of self-assembled (In, Mn)As quantum dots Chen YF, Lee WN, Huang JH, Chin TS, Huang RT, Chen FR, Kai JJ, Aravind K, Lin IN, Ku HC
1379 - 1385	Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy Poblenz C, Waltereit P, Speck JS
1386 - 1397	In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor-deposition process for real-time prediction of product crystal quality and advanced process control Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP, Parikh R, Adomaitis RA
1398 - 1404	Multi-axis retarder arrays by masked oblique deposition Arnold MD, Hodgkinson IJ, Wu QH, Blaike RJ
1405 - 1411	Deep etching of silicon with smooth sidewalls by an improved gas-chopping process using a Faraday cage and a high bias voltage Min JH, Lee JK, Moon SH
1412 - 1416	Electrical transport properties of ultrathin metallic films Tay M, Li KB, Wu YH
1417 - 1421	Nanowell device for the electrical characterization of metal-molecule-metal junctions Majumdar N, Gergel N, Routenberg D, Bean JC, Harriott LR, Li B, Pu L, Yao Y, Tour JM
1422 - 1427	Initial interface formation of Ta-based barriers on SiLK (TM) low dielectric constant films Liu J, Scharnberg M, Bao J, Im J, Ho PS
1428 - 1433	Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide Tsai CL, Lee FM, Hu CW, Wu MC, Ko SC, Wang HL, Ho WJ
1434 - 1440	Thermal excitation effects of photoluminescence of annealed GaInNAs/GaAs quantum-well laser structures grown by plasma-assisted molecular-beam epitaxy Wang SZ, Yoon SF, Fan WJ, Liu CY, Yuan S
1441 - 1444	Growth of InAsSb-channel high electron mobility transistor structures Tinkham BP, Bennett BR, Magno R, Shanabrook BV, Boos JB
1445 - 1449	Atmospheric pressure operation of a field emission diode based on self-assembled silicon nanostructures Lu CT, Johnson S, Lansley SP, Blaikie RJ, Markwitz A
1450 - 1453	Vertically aligned growth of carbon nanotubes with long length and high density Lee KY, Honda SI, Katayama M, Miyake T, Himuro K, Oura K, Lee JG, Mori H, Hirao T
1454 - 1458	Scanning capacitance force microscopy imaging of metal-oxide-semiconductor field effect transistors Kimura K, Kobayashi K, Yamada H, Matsushige K, Usuda K
1459 - 1462	Patterned growth of self-assembled silicon nanostructures by ion implantation and electron beam annealing Johnson S, Markwitz A, Rudolphi M, Baumann H
1463 - 1469	Compatibility of high pressure cleaning mixtures with a porous low dielectric constant film: A positronium annihilation lifetime spectroscopic study Myneni S, Peng HG, Gidley DW, Hess DW
1470 - 1473	Synthesis of metallic nanocrystals with size and depth control: A case study Jacobsohn LG, Zhang X, Misra A, Nastasi M
1474 - 1479	Highly c-axis oriented thin AIN films deposited on gold seed layer for FBAR devices Tay KW, Huang CL, Wu L
1480 - 1486	MOS-diode characteristics of ultrathin Al2O3 gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream Jin Y, Saito K, Shimada M, Ono T
1487 - 1490	Gray-scale photolithography using maskless exposure system Totsu K, Esashi M
1491 - 1498	Porosity-induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-k dielectrics Lazzeri P, Hua X, Oehrlein GS, Barozzi M, Iacob E, Anderle M
1499 - 1503	Impact of buried capping layer on electrical stability of advanced interconnects Yiang KY, Yoo WJ, Krishnamoorthy A
1504 - 1514	Structural and electrical investigation of high temperature annealed As-implanted Si crystals Bocchi C, Felisari L, Catellani A, Cicero G, Germini F, Gombia E, Mosca R, Nasi L, Mukhamedzhanov EK, Chuev MA, Privitera V, Camalleri M, Cali D
1515 - 1520	Importance of evaporation in the design of materials for step and flash imprint lithography Kim EK, Ekerdt JG, Willson CG
1521 - 1526	Optimization of an inductively coupled plasma etching process of GalnP/GaAs based material for photonic band gap applications Combrie S, Bansropun S, Lecomte M, Parillaud O, Cassette S, Benisty H, Nagle J
1527 - 1531	Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties Miyoshi M, Egawa T, Ishikawa H
1532 - 1542	Scanning tunneling microscopy investigation of nanostructures produced by Ar+ and He+ bombardment of MoS2 surfaces Park JB, France CB, Parkinson BA
1543 - 1550	Deposition of gold nanofeatures on silicon samples by field-induced deposition using a scanning tunneling microscope Abed H, Jamptchian H, Dallaporta H, Gely B, Bindzi P, Chatain D, Nitsche S, Chaudanson D, Cambril E, Safarov V, Tonneau D
1551 - 1557	Effect of plasma treatments on a low-k dielectric polymer surface Hoyas AM, Schuhmacher J, Whelan CM, Baklanov MR, Carbonell L, Celis JP, Maex K
1558 - 1561	Nitrogen diffusion and accumulation at the Si/SiO2 interface in SiO2/Si3N4/SiO2 structures for nonvolatile semiconductor memories Saraf M, Edrei R, Shima-Edelstein R, Roizin Y, Hoffman A
1562 - 1567	Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Poblenz C, Waltereit P, Rajan S, Mishra UK, Speck JS, Chin R, Smorchkova I, Heying B
1568 - 1575	Physical properties and high-temperature oxidation resistance of sputtered Si3N4/MoNx nanocomposite coatings Musil J, Dohnal P, Zeman P
1576 - 1581	Optimization of the active region of InGaN/GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects Grandusky JR, Jamil M, Shahedipour-Sandvik F, DeLuca JA, LeBoeuf SF, Cao XA, Arthur SD
1582 - 1584	Microfabrication and application of high-aspect-ratio silicon tips Wang YQ, van der Weide DW
1585 - 1588	Controllable two-dimensional photonic crystal patterns fabricated by nanosphere lithography Han S, Hao ZB, Wang J, Luo Y
1589 - 1596	Magnetic metal etching with organic based plasmas. I. CO/H-2 plasmas Orland AS, Blumenthal R
1597 - 1602	Metal etching with organic based plasmas. II. CO/NH3 plasmas Orland AS, Blumenthal R
1603 - 1606	Nanometer metal line fabrication using a ZEP520/50 KPMMA bilayer resist by e-beam lithography An LH, Zheng YK, Li KB, Luo P, Wu YH
1607 - 1610	Surface etching of YBCO films by xenon difluoride Crossley BL, Drehman AJ, Reid JR, Derov JS, Corrales AA, Crisman EE
1611 - 1614	Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN Hsu DSY, Kim CS, Eddy CR, Holm RT, Henry RL, Casey JA, Shamamian VA, Rosenberg A
1615 - 1621	Solvent vapor annealed block copolymer films on organosilane self-assembled monolayers Harant AW, Bowman CN
1622 - 1629	Growth of high quality Ge/Si1-xGex on nano-scale patterned Si structures Vanamu G, Datye AK, Zaidi SH
1630 - 1636	Chemical mapping of polymer photoresists by scanning transmission x-ray microscopy Muntean L, Planques R, Kilcoyne ALD, Leone SR, Gilles MK, Hinsberg WD
1637 - 1640	Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation Di ZF, Zhang M, Liu WL, Luo SH, Song ZT, Lin CL, Huang AP, Chu PK
1641 - 1644	Growth optimization of GaAsSb lattice matched to InP by gas-source molecular-beam epitaxy Wu BR, Xu CF, Chang KL, Hsieh KC, Cheng KY
1645 - 1649	Emission limited electrostatic atomization and the fine structure constant Kelly AJ
1650 - 1653	Selective wet etching of InGaAs/InGaAsP in HCl/HF/CrO3 solution: Application to vertical taper structures in integrated optoelectronic devices Huang H, Wang XY, Ren XM, Wang Q, Huang YQ
1654 - 1658	Monolithic organic-oxide microcavities fabricated by low-temperature electron-beam evaporation Persano L, Cingolani R, Pisignano D
1659 - 1663	Solid state amorphization at the room temperature deposited Ni/Si(100) interface Wen JF, Wang LB, Liu CH, Lee HH, Hwang J, Ouyang CP, Pi TW, Hwang JW, Cheng CP
1664 - 1673	Thermal stability of nitrogen in WNx barriers applied to polymetal gates Yamamoto N, Hanaoka Y, Yoshida T
1674 - 1678	Low temperature deposition of epitaxial BaTiO3 films in a rotating disk vertical MOCVD reactor Dhote AM, Meier AL, Towner DJ, Wessels BW, Ni J, Marks TJ
1679 - 1681	Fabrication of nanometer-sized ferromagnetic probe Tsai JTH, Wu CH
1682 - 1683	Character tables for the symmetry groups of single-walled carbon nanotubes Li TL, Ting JH
1684 - 1689	Combined molecular beam epitaxy low temperature scanning tunneling microscopy system: Enabling atomic scale characterization of semiconductor surfaces and interfaces Krause M, Stollenwerk A, Awo-Affouda C, Maclean B, LaBella VP
1692 - 1692	Papers from the 32nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces - 23-27 January 2005 - Bozeman, Montana Idzerda Y, Aspnes DE
1693 - 1699	Ordering of quantum dot molecules by self-organization van Lippen T, Notzel R, Wolter JH
1700 - 1705	Anisotropic strain fields in granular GaAs : MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs Moreno M, Jenichen B, Daweritz L, Ploog KH
1706 - 1713	Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates Sato T, Tamai I, Hasegawa H
1714 - 1721	Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy Shiozaki N, Sato T, Hasegawa H
1722 - 1725	Growth of beta-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane Kang BC, Lee SB, Boo JH
1726 - 1731	Interaction of single pentacene molecules with monatomic Cu/Cu(111) quantum wires Lagoute A, Folsch S
1732 - 1735	Control on self-organization of InGaAs/GaAs(100) quantum-dot chains Wang ZM, Mazur YI, Holmes K, Salamo GJ
1736 - 1740	Control of InAs/GaAs quantum dot density and alignment using modified buffer layers Ye W, Hanson S, Reason M, Weng X, Goldman RS
1741 - 1746	Role of thin InP cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001) Sakuma Y, Takeguchi M, Takemoto K, Hirose S, Usuki T, Yokoyama N
1747 - 1751	Effects of doping profile and post-growth annealing on spin injection from Fe into (AI,Ga)As heterostructures Adelmann C, Xie JQ, Palmstrom CJ, Strand J, Lou X, Wang J, Crowell PA
1752 - 1758	Phase behavior of thin film Mn/GaAs interfacial reactions Hilton JL, Schultz BD, McKernan S, Spanton SM, Evans MMR, Palmstrom CJ
1759 - 1768	Tailoring of the structural and magnetic properties of MnAs films grown on GaAs-strain and annealing effects Daweritz L, Herrmann C, Mohanty J, Hesjedal T, Ploog KH, Bauer E, Locatelli A, Cherifi S, Belkhou R, Pavlovska A, Heun S
1769 - 1772	Electronic and magnetotransport properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions May SJ, Wessels BW
1773 - 1781	Development methodology for high-kappa gate dielectrics on III-V semiconductors: GdxGa0.4-xO0.6/Ga2O3 dielectric stacks on GaAs Passlack M
1782 - 1784	Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation Khan T, Vasileska D, Thornton TJ
1785 - 1789	Scanning tunneling microscopy study of single molecule motion on the Si(100)-2 X 1 surface Basu R, Tovar JD, Hersam MC
1790 - 1794	Nucleation and growth of InN by high-pressure chemical vapor deposition: Optical monitoring Woods V, Senawirante J, Dietz N
1795 - 1798	GaN films deposited at low temperature on (111)Si by compound-source molecular beam epitaxy technique Honda T, Aoki Y, Akiyama M, Obinata N, Egawa S, Kawanishi H
1799 - 1807	Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors Kotani J, Kasai S, Hashizume T, Hasegawa H
1808 - 1813	Imaging of thickness and compositional fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy Zhou X, Yu ET, Florescu DI, Ramer JC, Lee DS, Ting SM, Armour EA
1814 - 1820	Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn1-xMgxSe grown by molecular beam epitaxy VanMil BL, Tompkins RP, Feng K, Swartz CH, Giles NC, Myers TH
1821 - 1825	Kinetic lattice Monte Carlo simulations of germanium epitaxial growth on the silicon (100) surface incorporating Si-Ge exchange Akis R, Ferry DK
1826 - 1831	High-rate and low-temperature synthesis of TiO2, TiN, and TiO2/TiN/TiO2 thin films and study of their optical and interfacial characteristics Jung MJ, Lee HY, Han JG, Jung CK, Moon JS, Boo JH
1832 - 1837	Atomic diffusion and band lineups at In0.53Ga0.47As-on-InP heterointerfaces Smith PE, Goss SH, Gao M, Hudait MK, Lin Y, Ringel SA, Brillson LJ
1838 - 1842	Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films Gensch M, Roodenko K, Hinrichs K, Hunger R, Guell AG, Merson A, Schade U, Shapira Y, Dittrich T, Rappich J, Esser N