1 - 5 |
Interelectrode separation effects on a-SiGe : H films prepared by plasma chemical vapor deposition Sali JV, Rashad A, Marathe BR, Takwale MG, Gangurde KD, Shaligram AD |
6 - 8 |
Titanium dioxide thin film deposited by spray pyrolysis of aqueous solution Natarajan C, Fukunaga N, Nogami G |
9 - 13 |
The growth of hexagonal boron nitride thin films on silicon using single source precursor Rohr C, Boo JH, Ho W |
14 - 20 |
Polycrystalline RbTiOPO4 and KTiOPO4 bilayer thin films by spray pyrolysis Golego N, Cocivera M |
21 - 27 |
Optical properties of CdS nanocrystalline films prepared by a precipitation technique Nanda KK, Sarangi SN, Mohanty S, Sahu SN |
28 - 32 |
Laser ablation doping process for the synthesis of conductive diamond thin film Gaze J, Oyanagi N, Yamamoto I, Izawa H |
33 - 36 |
Phase composition of anodic oxide films on transition metals : a thermodynamic approach Pergament AL, Stefanovich GB |
37 - 40 |
Temperature effects on growth of boron nitride thin films by a hot filament assisted rf plasma chemical vapor deposition Ma XY, Yang JM, He DY, Chen GH |
41 - 45 |
Synthesis of Sn-doped a-C : H films by RF plasma-enhanced chemical vapor deposition and their characterization Inoue Y, Komoguchi T, Nakata H, Takai O |
46 - 55 |
UHV magnetron sputtering of silver films on rock salt : quantitative x-ray texture analysis of substrate-temperature-dependent microstructure Yang FL, Somekh RE, Greer AL |
56 - 62 |
Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature Meng LJ, dos Santos MP |
63 - 67 |
SEM and XPS studies of titanium dioxide thin films grown by MOCVD Babelon P, Dequiedt AS, Mostefa-Sba H, Bourgeois S, Sibillot P, Sacilotti M |
68 - 73 |
Crystallisation kinetics of amorphous W-Co-C sputtered films Trindade B, Vieira MT |
74 - 84 |
Growth of diamond thin films in a cyclic growth etch oxy-acetylene flame process Kapil R, Mehta BR, Vankar VD, Roy C, Pradhan A |
85 - 92 |
Gallium phosphate thin solid films : structural and chemical determination of the oxygen surroundings by XANES and XPS Tourtin F, Armand P, Ibanez A, Tourillon G, Philippot E |
93 - 97 |
Substrate temperature dependent properties of sprayed CoFe2O4 ferrite thin films Bellad SS, Bhosale CH |
98 - 103 |
Response characteristics of lead phthalocyanine gas sensor : effects of film thickness and crystal morphology Hsieh JC, Liu CJ, Ju YH |
104 - 107 |
Preparation and ferroelectric properties of BaTiO3 thin films by atmospheric-pressure metalorganic chemical vapor deposition Zeng JM, Wang H, Wang M, Shang SX, Wang Z, Lin CL |
108 - 116 |
A quasi-equilibrium model for the prediction of interlayer chemistry during diamond chemical vapor deposition Mahalingam P, Dandy DS |
117 - 122 |
Deposition and characterization of ZnxCd1-xS thin films prepared by the dip technique Ray SC, Karanjai MK, DasGupta D |
123 - 131 |
Deposition and properties of germanium/carbon films deposited from tetramethylgermanium in a parallel plate RF discharge Gazicki M, Ledzion R, Mazurczyk R, Pawlowski S |
132 - 137 |
Pulsed laser deposition of bismuth in the presence of different ambient atmospheres Boffoue MO, Lenoir B, Scherrer H, Dauscher A |
138 - 142 |
Epitaxial growth with phosphorus - 4. Application of dichloro-t-butylphosphine to CVD processes : the thermal chemical vapor deposition formation of copper phosphide thin films and etching of indium phosphide by dichloro-t-butylphosphine Glass JA, Spencer JT |
143 - 147 |
Microstructural study of boron doped diamond films by X-ray diffraction profiles analysis Brunet F, Germi P, Pernet M |
148 - 157 |
Poly(chloro-p-xylylene)/SiO2 multilayer thin films deposited near room temperature by thermal CVD Senkevich JJ, Desu SB |
158 - 166 |
Determination of flatband potential for boron doped diamond electrode in 0.5 M NaCl by AC impedance spectroscopy Ramesham R |
167 - 176 |
Effect of coupling of radio-frequency plasma on the growth of diamond films in a hot filament reactor Pai MP, Musale DV, Kshirsagar ST, Mitra A, Sainkar SR |
177 - 187 |
Surface roughening during ion-assisted film deposition Carter G |
188 - 193 |
Control of domain structure of a cyanine dye Langmuir-Blodgett film Watanabe T, Asai K, Ishigure K |
194 - 197 |
Fractal formation and tunnelling effects on the conductivity of Au/a-Ge bilayer films Chen ZW, Zhang SY, Tan S, Tian ML, Hou JG, Zhang YH |
198 - 205 |
Redox reaction at the two-layer interface between aluminum and electropolymerized poly(3-methylthiophene) thin solid films Uehara K, Ichikawa T, Serikawa T, Yoshikawa S, Ehara S, Tsunooka M |
206 - 212 |
Properties of duplex coatings prepared by plasma nitriding and PVD Ti-C : H deposition on X20Cr13 ferritic stainless steel Michler T, Grischke M, Bewilogua K, Dimigen H |
213 - 217 |
Properties of thin Ta-N films reactively sputtered on Cu/SiO2/Si substrates Chuang JC, Chen MC |
218 - 224 |
Evaluation on the tension and fatigue behavior of various PVD coated materials Su YL, Yao SH, Wei CS, Wu CT |
225 - 232 |
A simple indentation stress-strain relation for contacts with spheres on bilayer structures Hu XZ, Lawn BR |
233 - 237 |
Third-order nonlinear optical properties of Disperse Red 1 and Au nanometer-size particle-doped alumina films prepared by the sol-gel method Muto S, Kubo T, Kurokawa Y, Suzuki K |
238 - 244 |
Waveguiding properties of CdS-doped SiO2-TiO2 films prepared by sol-gel method Juodkazis S, Bernstein E, Plenet JC, Bovier C, Dumas J, Mugnier J, Vaitkus JV |
245 - 253 |
Relationship between the structure and the optical and electrical properties of ion beam deposited CNx films Zhao XA, Ong CW, Tsang YC, Chan KF, Choy CL, Chan PW, Kwok RWM |
254 - 258 |
Electron beam stabilization and dissolution behaviors of advanced deep UV photoresist for sub 0.3 mu m microelectronics fabrication Shi FF, Yu SH |
259 - 262 |
Waveguiding pulsed laser deposited Ti : sapphire layers on quartz Jelinek M, Eason RW, Lancok J, Anderson AA, Grivas C, Fotakis C, Jastrabik L, Flory F, Rigneault H |
263 - 273 |
A comparison of the electrochemical behaviour of W-M-N (M=Ni, Ti, Al) thin film coatings on high speed steel Brett CMA, Cavaleiro A |
274 - 281 |
Structural, electrical and optical properties of zinc nitride thin films prepared by reactive rf magnetron sputtering Futsuhara M, Yoshioka K, Takai O |
282 - 289 |
Luminescence of spark processed porous InP Gudino-Martinez A, Rosendo E, Navarro-Contreras H, Vidal MA |
290 - 297 |
Modulated photocurrent of evaporated copper phthalocyanine thin films Tanaka T, Matazuma M, Hirohashi R |
298 - 302 |
A study on the crystallographic orientation with residual stress and electrical property of Al films deposited by sputtering Kim SP, Choi HM, Choi SK |
303 - 307 |
Determination of structure and shape of nanoclusters obtained in sulphidation of Langmuir-Blodgett layers Dultsev FN, Sveshnikova LL |
308 - 313 |
Langmuir-Blodgett films of poly-N-vinylcarbazole prepared by radical polymerization method Liu JF, Lu ZH, Yang KZ |
314 - 318 |
A study of the depth dependence of photoluminescence from thin film CdS/CdTe solar cells using bevel etched samples Halliday DP, Eggleston JM, Durose K |
319 - 322 |
Study on annealing effects of Au thin films on Si Young TF, Chang JF, Ueng HY |
323 - 328 |
Raman spectroscopy and X-ray diffraction study of sol-gel derived (PB1-xLax)Ti1-x/4O3 thin films on Si substrates Wu D, Li AD, Ge CZ, Lu P, Xu CY, Xu J, Ming NB |
329 - 333 |
Properties of CdS thin films chemically deposited in the presence of a magnetic field Vigil O, Rodriguez Y, Zelaya-Angel O, Vazquez-Lopez C, Morales-Acevedo A, Vazquez-Luna JG |
334 - 339 |
The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films Parlak M, Ercelebi C |
340 - 343 |
Aging studies on discontinuous silver films in ultrahigh vacuum Pattabi M, Suresh N, Chaudhari SM, Banerjee A, Phase DM, Gupta A, Rao KM |