1 - 4 |
Structural domain growth of strained gadolinium on Mo(112) Waldfried C, Dowben PA, Zeybek O, Bertrams T, Barrett SD |
5 - 8 |
Optical second harmonic images of merocyanine J-aggregate monolayers at the air-water interface Kato N, Saito K, Uesu Y |
9 - 12 |
Growth of InxGa1-xN thin films on indium tin oxide/glass substrates by RF plasma enhanced chemical vapor deposition Park DC, Ko HC, Fujita S, Fujita S |
13 - 19 |
Growth of CuInSe2 thin films by high vapour Se treatment of co-sputtered Cu-In alloy in a graphite container Adurodija FO, Song J, Kim SD, Kwon SH, Kim SK, Yoon KH, Ahn BT |
20 - 23 |
Plasma activated pulsed laser deposition for synthesis of particle-free La2-xSrxCuO4 films Yin HQ, Ueda Y, Arakawa T, Kaneda Y, Yoshikawa T, Haneji N, Sugahara M |
24 - 39 |
A novel model of hydrogen plasma assisted chemical vapor deposition of copper Lakshmanan SK, Gill WN |
40 - 45 |
Structural studies on silver cluster films deposited on softened PVP substrates Pattabi M, Rao KM, Sainkar SR, Sastry M |
46 - 48 |
Native oxides on AlGaAs epilayer Ghita RV, Vasile E, Cengher D |
49 - 59 |
Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds Zajickova L, Janca J, Perina V |
60 - 69 |
Epitaxial relationships and electrical properties of vanadium oxide films on r-cut sapphire Bialas H, Dillenz A, Downar H, Ziemann P |
70 - 74 |
W/Si multilayers deposited by hot-filament MOCVD Hamelmann F, Petri SHA, Klipp A, Haindl G, Hartwich J, Dreeskornfeld L, Kleineberg U, Jutzi P, Heinzmann U |
75 - 80 |
Growth mechanism of 2H-WS2 thin films: A similar process to graphitization Lignier O, Couturier G, Salardenne J |
81 - 87 |
Angular distribution of sputtered atoms in physical vapor deposition and collimated sputtering Cook J |
88 - 92 |
Effect of the substrate temperature on the deposition of hydrogenated amorphous carbon by PACVD at 35 kHz Gago R, Sanchez-Garrido O, Climent-Font A, Albella JM, Roman E, Raisanen J, Rauhala E |
93 - 99 |
The preparation of single-crystal 4H-SiC film by pulsed XeCl laser deposition Wang YX, Wen J, Guo Z, Tang YQ, Tang HG, Wu JX |
100 - 104 |
A rotating electrochemical cell to prepare porous silicon with different surface structures Osorio-Saucedo R, Vazquez-Lopez G, Calleja W, Allred DD, Falcony C |
105 - 109 |
Microstructure and optical properties of amorphous TiO2-SiO2 composite films synthesized by helicon plasma sputtering Wang XR, Masumoto H, Someno Y, Hirai T |
110 - 117 |
Effect of impurities on initial stages of phase formation for the system of Ti deposited on (001) Si-Ge layers Beregovsky M, Levin I, Berner A, Eizenberg M, Demuth V, Strunk HP |
118 - 124 |
Properties of sprayed YBCO films on YSZ substrates Ban E, Matsuoka Y, Yoshimura T, Takahashi K |
125 - 130 |
Structural and optical properties of sprayed CuInS2 films Krunks M, Bijakina O, Varema T, Mikli V, Mellikov E |
131 - 135 |
A comparative study of electroluminescence from nanosize Si particle embedded silicon oxide films and that from nanosize Ge particle embedded silicon oxide films Qin GG, Bai GF, Li AP, Ma SY, Sun YK, Zhang BR, Ma ZC, Zong WH |
136 - 141 |
Stress development in amorphous zirconium oxide films prepared by sol-gel processing Brenier R, Urlacher C, Mugnier J, Brunel M |
142 - 148 |
Electrical and chemical sensing properties of doped polypyrrole/gold Schottky barrier diodes Nguyen VC, Potje-Kamloth K |
149 - 154 |
Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process Cho SM, Jeon DY |
155 - 160 |
Nanometer-scale hole- and bit-modifications of oligosilane- and stearic acid-Langmuir-Blodgett films Maruyama H, Kosai N, Tanaka K |
161 - 164 |
Structural and electrical properties of Fe films grown on InP substrates Kim TW, Lee DU, Yoon YS, Shin YH, Kim CO |
165 - 171 |
Nanostructure of Ge deposited on Si(001): a study by XPS peak shape analysis and AFM Simonsen AC, Schleberger M, Tougaard S, Hansen JL, Larsen AN |
172 - 176 |
Tribological properties of a-C : H multilayer structures Knoblauch-Meyer L, Hauert R |
177 - 184 |
Influence of single- and multilayer TiN films on the axial tension and fatigue performance of AISI 1045 steel Su YL, Yao SH, Wei CS, Kao WH, Wu CT |
185 - 187 |
Indirect transitions in thin films due to the coulomb interactions between electrons Kazaryan EM, Mkhoyan KA, Sarkisyan HA |
188 - 196 |
Distribution of radiation intensity in a thin semiconductor film on a thick substrate Augelli V, Nowak M |
197 - 200 |
Radiation damage in air annealed indium till oxide layers Salehi A |
201 - 206 |
Electrochromic properties of sol-gel deposited Ti-doped vanadium oxide film Ozer N, Sabuncu S, Cronin J |
207 - 212 |
Optical absorption studies on AgInSe2 and AgInTe2 thin films El-Korashy A, Abdel-Rahim MA, El-Zahed H |
213 - 219 |
Characteristics of electron traps in Si-doped Ga0.51In0.49P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures Besikci C, Civan Y |
220 - 223 |
Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates Xu ZL, Xu WJ, Li L, Yang CQ, Liu R, Liu HD |
224 - 230 |
On ageing and critical thickness of YBa2Cu3O7 films on Si with CeO2/YSZ buffer layers Tian YJ, Linzen S, Schmidl F, Matthes A, Schneidewind H, Seidel P |
231 - 242 |
Ultrathin Fe-oxide layers made from Langmuir-Blodgett films Brugger A, Schoppmann C, Schurr M, Seidl M, Sipos G, Hahn CY, Hassmann J, Waldmann O, Voit H |
243 - 251 |
Vacuum-deposited films of liquid crystal molecules of 4-n-alkoxy-4 '-cyanobiphenyls: Their electronic spectra and molecular aggregate structure Imamura T, Watanabe K, Tsuboi Y, Miyasaka H, Itaya A |
252 - 264 |
The dissolution of myristic acid monolayers in water Albrecht O, Matsuda H, Eguchi K, Nakagiri T |
265 - 268 |
Chopping effect on the crystallinity of ZnO films prepared by a r.f. planar magnetron sputtering method Han BM, Chang S, Kim SY |
269 - 275 |
Influence of the assisting-ion-beam parameters on the laser-damage threshold of SiO2 films Alvisi M, De Nunzio G, Perrone MR, Rizzo A, Scaglione S, Vasanelli L |
276 - 280 |
The interaction of oxygen with nanocrystalline SnO2 thin films in the framework of the electron theory of adsorption Santos JP, de Agapito JA |
281 - 285 |
Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 degrees C strain point glass substrates Hatalis MK, Kouvatsos DN, Kung JH, Voutsas AT, Kanicki J |
286 - 290 |
The characterization and gas-sensing properties of a novel amphiphilic phthalocyanine LB film Ding X, Xu H |
291 - 299 |
Effects of photo-excitation and organic vapor treatment on vapor sorption behavior of sputtered fluoropolymer films Sugimoto I, Shimada R |
300 - 303 |
Effect of magnetic field on growth of functional organic thin films Mori T, Mori K, Mizutani T |
304 - 313 |
Room temperature oxidation behavior of TiN thin films Logothetidis S, Meletis EI, Stergioudis G, Adjaottor AA |
314 - 319 |
Influence of annealing on the magnetic properties of alternate deposited Co/Mo thin film Lin C, Chen YG, Liu BX |
320 - 324 |
SiC formation and influence on the morphology of polycrystalline silicon thin films on graphite substrates produced by zone melting recrystallization (vol 326, 175, 1998) Hauttmann S, Kunze T, Muller J |