Thin Solid Films

Thin Solid Films, Vol.430, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (70 articles)

1 - 6	Status report: solar cell related research and development using amorphous and microcrystalline silicon deposited by HW(Cat)CVD Schroeder B
7 - 14	Recent progress of Cat-CVD research in Japan - bridging between the first and second Cat-CVD conferences Matsumura H, Umemoto H, Izumi A, Masuda A
15 - 19	Silicon for thin-film transistors Wagner S, Gleskova H, Cheng IC, Wu M
20 - 23	Studying early time HWCVD growth of a-Si : H by real time spectroscopic ellipsometry Levi D, Nelson BP, Reedy R
24 - 27	Deposition chemistry in the Cat-CVD processes of the SiH4/NH3 system Umemoto H, Morimoto T, Yamawaki M, Masuda Y, Masuda A, Matsumura H
28 - 32	Modeling and measurement of film deposition in a one-dimensional hot-wire CVD system Zhou J, Wolden CA
33 - 36	Effect of hydrogen radical on growth of mu c-Si in hetero-structured SiCx alloy films Itoh T, Fukunaga K, Fujiwara T, Nonomura S
37 - 40	Hot-wire chemical vapor deposition of high hydrogen content silicon nitride for solar cell passivation and anti-reflection coating applications Holt JK, Goodwin DG, Gabor AM, Jiang F, Stavola M, Atwater HA
41 - 45	Spectroscopic and kinetic ellipsometry studies of hot-wire deposited polycrystalline silicon on glass van Veenendaal PATT, van der Mark GWM, Rath JK, Schropp REI
46 - 49	The influence of the filament temperature on the structure of hot-wire deposited silicon van der Werf CHM, van Veenendaal PATT, van Veen MK, Hardeman AJ, Rusche MYS, Rath JK, Schropp REI
50 - 53	Influence of heated catalyzer on thermal distribution of substrate in HWCVD system Zhang Q, Zhu M, Wang L, Liu E
54 - 57	Hot-wire chemical vapor deposition for grained polycrystalline epitaxial silicon growth on large-silicon templates Mason MS, Chen CM, Atwater HA
58 - 62	Development of Cat-CVD apparatus for 1-m-size large-area deposition Ishibashi K, Karasawa M, Xu G, Yokokawa N, Ikemoto M, Masuda A, Matsumura H
63 - 66	Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices Patil SB, Vairagar AV, Kumbhar AA, Sahu LK, Rao VR, Venkatramani N, Dusane RO, Schroeder B
67 - 72	Deposition of HWCVD poly-Si films at a high growth rate Rath JK, Hardeman AJ, van der Werf CHM, van Veenendaal PATT, Rusche MYS, Schropp REI
73 - 77	Monte Carlo simulations on large-area deposition of amorphous silicon by hot-wire CVD Pfluger A, Schroder B, Bart HJ
78 - 82	Combinatorial hot-wire CVD approach to exploring thin-film Si materials and devices Wang Q
83 - 86	The silicon neighborhood across the a-Si : H to mu c-Si transition by X-ray absorption spectroscopy (XAS) Tessler LR, Wang Q, Branz HM
87 - 90	Catalytic CVD growth of Si-C and Si-C-O alloy films by using alkylsilane and related compounds Nakayama H, Takatsuji K, Murakami K, Miura Y, Shimoyama N, Machida H
91 - 94	Properties of a-Si : H films grown using hot wire-ECR plasma techniques Dalal VL, Seberger P, Ring M, Sharma P
95 - 99	Hydrogen distribution, nanostructures and optical properties of high deposition rate hot-wire CVD a-Si : H Baugh J, Wang K, Han DX, Wu Y
IX - XI	Proceedings of the Second International Conference on Cat-CVD (Hot Wire CVD) Process, Denver, Colorado, USA, September 10-13, 2002 - Preface Schropp REI, Schubert MB
100 - 103	Electrical properties of silicon nitride films deposited by catalytic chemical vapor deposition on catalytically nitrided Si(100) Kikkawa A, Morimoto R, Izumi A, Matsumura H
104 - 109	Narrow gap a-SiGe : H grown by hot-wire chemical vapor deposition Nelson BR, Xu YQ, Williamson DL, Han DX, Braunstein R, Boshta M, Alavi B
110 - 115	Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD Bouree JE, Guillet J, Grattepain C, Chaumont J
116 - 119	Characterization of Cat-CVD grown Si-C and Si-C-O dielectric films for ULSI applications Takatsuji K, Kawakami M, Makita Y, Murakami K, Nakayama H, Miura Y, Shimoyama N, Machida H
120 - 124	Deposition and structural characterization of poly-Si thin films on Al-coated glass substrates using hot-wire chemical vapor deposition Ebil O, Aparicio R, Hazra S, Birkmire RW, Sutter E
125 - 129	High-rate deposition of amorphous silicon films using hot-wire CVD with a coil-shaped filament Povolny HS, Deng XM
130 - 134	Fundamental aspects of low-temperature growth of microcrystalline silicon Kondo M, Fujiwara H, Matsuda A
135 - 140	Effects of dilution ratio and seed layer on the crystallinity of microcrystalline silicon thin films deposited by hot-wire chemical vapor deposition Moutinho HR, Jiang CS, Perkins J, Xu Y, Nelson BP, Jones KM, Romero MJ, Al-Jassim MM
141 - 144	Neutral dangling bonds may not be the dominant recombination centers for photoconductivity in hot-wire a-Si : H Han DX, Yue GZ, Wang Q, Shimizu T
145 - 148	Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD Fonrodona M, Gordijn A, van Veen MK, van der Werf CHM, Bertomeu J, Andreu J, Schropp REI
149 - 152	Light induced changes in the defect structure of a-Si : H Britton DT, Sigcau Z, Comrie CM, Kanguwe DF, Minani E, Knoesen D, Harting M
153 - 156	Stress in hydrogenated amorphous silicon determined by X-ray diffraction Harting M, Woodford S, Knoesen D, Bucher R, Britton DT
157 - 160	Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD Soler D, Fonrodona M, Voz C, Asensi JM, Bertomeu J, Andreu J
161 - 164	Al2O3 formation on Si by catalytic chemical vapor deposition Ogita YI, Iehara S, Tomita T
165 - 169	Coverage properties of silicon nitride film prepared by the Cat-CVD method Osono S, Uchiyama Y, Kitazoe M, Saito K, Hayama M, Masuda A, Izumi A, Matsumura H
170 - 173	Fabrication of a-Si1-xCx : H thin films for solar cells by the Cat-CVD method using a carbon catalyzer Sugita K, Itoh M, Masuda A, Matsumura H
174 - 177	Growth of GaN films on nitrided GaAs substrates using hot-wire CVD Yasui K, Morimoto K, Akahane T
178 - 181	Growth of c-GaN films on GaAs(100) using hot-wire CVD Yasui K, Kanauchi K, Akahane T
182 - 185	Poly-crystalline silicon thin films prepared by plasma-assisted hot-wire chemical vapor deposition Liu F, Zhu M, Liu J, Wang L
186 - 188	Revisiting the B-factor variation in a-SiC : H deposited by HWCVD Swain BP, Patil SB, Kumbhar A, Dusane RO
189 - 191	Nitrogen dilution effects on structural and electrical properties of hot-wire-deposited a-SiN : H films for deep-sub-micron CMOS technologies Waghmare PC, Patil SB, Kumbhar AA, Rao R, Dusane RO
192 - 196	Small-angle neutron scattering studies of hot-wire CVD a-Si : H Williamson DL, Marr DWM, Iwaniczko E, Nelson BP
197 - 201	Improving narrow bandgap a-SiGe : H alloys grown by hot-wire chemical vapor deposition Xu YQ, Nelson BP, Gedvilas LM, Reedy RC
202 - 207	Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells Klein S, Finger F, Carius R, Dylla T, Rech B, Grimm M, Houben L, Stutzmann M
208 - 211	Development of a hot-wire chemical vapor deposition n-type emitter on p-type crystalline Si-based solar cells Wang Q, Page MR, Xu XQ, Iwaniczko E, Williams E, Wang TH
212 - 215	Microcrystalline silicon for solar cells deposited at high rates by hot-wire CVD Iwaniczko E, Xu Y, Schropp REI, Mahan AH
216 - 219	Incorporation of amorphous and microcrystalline silicon in n-i-p solar cells van Veen MK, van der Werf CHM, Rath JK, Schropp REI
220 - 225	Thin-film transistors deposited by hot-wire chemical vapor deposition Stannowski B, Rath JK, Schropp REI
226 - 229	Preparation of poly-Si films by Cat-CVD for thin film transistor Sunayama H, Yamada K, Karasawa M, Ishibashi K
230 - 235	Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application Morimoto R, Yokomori C, Kikkawa A, Izumi A, Matsumura H
236 - 239	Preparation of n-i-p solar cells entirely by HWCVD with microcrystalline p-layer Kupich M, Kumar P, Schroder B
240 - 244	Hot-wire thin-film transistors on PET at 100 degrees C Conde JP, Alpuim P, Chu V
245 - 248	Preparation of B-doped a-Si1-xCx : H films and heterojunction p-i-n solar cells by the Cat-CVD method Chikusa K, Takemoto K, Itoh T, Yoshida N, Nonomura S
249 - 252	Switching and filament formation in hot-wire CVD p-type a-Si : H devices Hu J, Branz HM, Crandall RS, Ward S, Wang Q
253 - 256	Hydrogen-radical durability of TiO2 thin films for protecting transparent conducting oxide for Si thin film solar cells Natsuhara H, Ohashi T, Ogawa S, Yoshida N, Itoh T, Nonomura S, Fukawa M, Sato K
257 - 260	Preliminary results on a-SiC : H based thin film light emitting diode by hot wire CVD Patil SB, Kumbhar AA, Saraswat S, Dusane RO
261 - 264	Hydrogen passivation and junction formation on APIVT-deposited thin-layer silicon by hot-wire CVD Wang TH, Wang Q, Page MR, Bauer RE, Ciszek TF
265 - 269	Application of decomposed species generated by a heated catalyzer to ULSI fabrication processes Izumi A, Miki T, Matsumura H
270 - 273	Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films Voz C, Martin I, Orpella A, Puigdollers J, Vetter M, Alcubilla R, Soler D, Fonrodona M, Bertomeu J, Andreu J
274 - 277	Highly conductive microcrystalline silicon carbide films deposited by the hot wire cell method and its application to amorphous silicon solar cells Miyajima S, Yamada A, Konagai M
278 - 282	Hot-wire photonics: materials, science, and technology Fortmann CM, Mahan AH, Ward S, Anderson WA, Tonucci R, Hata N
283 - 286	Epitaxial growth of strained Si1-yCy films by the hot-wire cell method and its application to metal oxide semiconductor devices Watahiki T, Abe K, Yamada A, Konagai M
287 - 291	Preparation of SiO2 thin films using the Cat-CVD method Saito K, Uchiyama Y, Abe K
292 - 295	Hot-wire chemical vapor deposition of carbon nanotubes Dillon AC, Mahan AH, Alleman JL, Heben MJ, Parilla PA, Jones KM
296 - 299	Crystallization by excimer laser annealing for a-Si : H films with low hydrogen content prepared by Cat-CVD Yogoro Y, Masuda A, Matsumura H
300 - 303	Hot-wire growth of multi-phase carbon nitride films Mitra S, Deshpande R, Hanrath T, Hartman J
304 - 308	Hot-wire deposition of amorphous and microcrystalline silicon using different gas excitations by a coiled filament Deng XM, Povolny HS
309 - 312	Catalytic CVD growth and properties of a-C : H and a-C : N Nakayama H, Takatsuji K, Moriwaki S, Murakami K, Mizoguchi K, Nakayama M, Miura Y