Thin Solid Films

Thin Solid Films, Vol.306, No.2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (29 articles)

179 - 186	Surface reactions and kinetic phenomena in molecular layer epitaxy of III-V semiconductor compounds Nishizawa J, Kurabayashi T
187 - 191	Arsenic pressure dependence of inter-surface diffusion in MBE of GaAs studied by the microprobe RHEED/SEM MBE system Nishinaga T, Yamashiki A, Shen XQ
192 - 197	MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates Fahy MR, Zhang XM, Tok ES, Neave JH, Vaccaro P, Fujita K, Takahashi M, Watanabe T, Sato K, Joyce BA
198 - 204	Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques Darhuber AA, Stangl J, Holy V, Bauer G, Krost A, Grundmann M, Bimberg D, Ustinov VM, Kop'ev PS, Kosogov AO, Werner P
205 - 213	UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth Latyshev AV, Krasilnikov AB, Aseev AL
214 - 219	Spectroscopy on MBE-grown interfaces with high spatial resolution von Kanel H, Meyer T
220 - 223	Monte-Carlo simulation of Ge on Si(111) MBE growth : analysis of percolative structure Daniluk A, Mazurek P, Paprocki K, Mikolajczak P
224 - 227	One-dimensional structures on Si(111) observed by RHEED Jalochowski M, Strozak M, Zdyb R
228 - 230	Distributed growth model used for the interpretation of RHEED intensity oscillations observed during the growth of Pb on Si(111) substrates Daniluk A, Mazurek P, Paprocki K, Mikolajczak P
231 - 236	MBE growth and characteristics of cubic GaN Ploog KH, Brandt O, Yang H, Trampert A
237 - 243	All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors Pessa M, Toivonen M, Jalonen M, Savolainen P, Salokatve A
244 - 247	Optical spectroscopy of MBE grown AlGaAs/GaAs quantum wells at various acceptor doping levels Ferreira AC, Holtz PO, Buyanova I, Monemar B, Sundaram M, Merz JL, Gossard AC
248 - 252	Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As-4 flux Kozhukhov AV, Revenko MA, Fedorov AA, Konarski P, Herman MA
253 - 265	Peculiarities of the MBE growth physics and technology of narrow-gap II-VI compounds Sidorov YG, Dvoretsky SA, Yakushev MV, Mikhailov NN, Varavin VS, Liberman VI
266 - 270	Ultrahigh vacuum atomic layer epitaxy of Cd1-xMnxTe layers grown on ZnTe/GaAs(100) substrates : reflection mass spectrometry studies Sadowski JT, Herman MA
271 - 282	Excitons in novel diluted magnetic semiconductor quantum structures Wojtowicz T, Karczewski G, Kossut J
283 - 290	Growth by molecular beam epitaxy and magnetooptical studies of (100)- and (120)-oriented digital magnetic quantum well structures Kutrowski M, Karczewski G, Cywinski G, Surma M, Grasza K, Lusakowska E, Kossut J, Wojtowicz T, Fiederling R, Yakovlev DR, Mackh G, Zehnder U, Ossau W
291 - 295	Fabrication and magnetoconductance studies on submicron wires and films of MBE grown CdTe : In Jaroszynski J, Wrobel J, Nowakowski R, Dus R, Papis E, Kaminska E, Piotrowska A, Karczewski G, Wojtowicz T, Sawicki M, Skoskiewicz T, Dietl T
296 - 298	Multiple quantum well exciton Bragg mirrors, tunable by magnetic field Sadowski J, Mariette H, Wasiela A, d'Aubigne YM
299 - 306	Surface processes and phase diagrams in MBE growth of Si/Ge heterostructure Pchelyakov OP, Markov VA, Nikiforov AI, Sokolov LV
307 - 312	Structural and optical characterisation of undoped Si-Si0.78Ge0.22/Si(001) superlattices grown by MBE Mironov OA, Phillips PJ, Parker EHC, Dowsett MG, Barradas NP, Jeynes C, Mironov M, Gnezdilov VP, Ushakov V, Eremenko VV
313 - 319	Van der Waals epitaxy with C-60 molecules and change of the growth mechanism by Ba-doping Sitter H, Stifter D, Manh TN
320 - 325	Doping studies for molecular beam epitaxy of PbTe and Pb1-xEuxTe Ueta AY, Springholz G, Schinagl F, Marschner G, Bauer G
326 - 330	Interfacial roughness and magnetoresistance in Co/Cu multilayers Wawro A, Baczewski L, Kalinowski R, Aleszkiewicz M, Rauluszkiewicz J
331 - 337	Molecular beam epitaxy : from research to manufacturing Henini M
338 - 345	Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for p-channel field-effect transistors Whall TE, Parker EHC
346 - 351	Growth and properties of nonperiodic multiple thin films Sasaki A
352 - 355	Formation of segregated cell structure for MBE growth of mismatched semiconductors Gaiduk PI, Komarov FF
III - IV	Papers presented at the Workshop on Molecular Beam Epitaxy Growth Physics and Technology (MBE-GPT '96), Warsaw, Poland, October 21-25, 1996 - Preface Herman MA