8433 - 8433 |
Selected Papers from the Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010) Tsukuba, July 24-26, 2010 Preface Maeda Y, Terai Y, Homewood KP, Takarabe K, Yamaguchi K, Suzuki M, Sadoh T, Nakamura Y |
8434 - 8440 |
Endotaxial silicide nanowires: A review Bennett PA, He ZA, Smith DJ, Ross FM |
8441 - 8445 |
Crystalline-silicon-based infra-red LEDs and routes to laser diodes Lourenco MA, Homewood KP |
8446 - 8450 |
Crystallographic characteristics and fine structures of semiconducting transition metal silicides Shao G, Gao Y, Xia XH, Milosavljevic M |
8451 - 8455 |
Preparation of high purity metals for advanced devices Isshiki M, Mimura K, Uchikoshi M |
8456 - 8460 |
New semiconducting silicides assembled from transition-metal-encapsulating Si clusters Uchida N, Miyazaki T, Matsushita Y, Sameshima K, Kanayama T |
8461 - 8467 |
Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111) Maeda Y, Narumi K, Sakai S, Terai Y, Hamaya K, Sadoh T, Miyao M |
8468 - 8472 |
Bandgap modifications by lattice deformations in beta-FeSi2 epitaxial films Terai Y, Noda K, Yoneda K, Udono H, Maeda Y, Fujiwara Y |
8473 - 8476 |
Metalorganic chemical vapor deposition of beta-FeSi2 on beta-FeSi2 seed crystals formed on Si substrates Suzuno M, Akutsu K, Kawakami H, Akiyama K, Suemasu T |
8477 - 8479 |
Photoabsorption properties of beta-FeSi2 nanoislands grown on Si(111) and Si(001): Dependence on substrate orientation studied by nano-spectroscopic measurements Naruse N, Nakamura Y, Mera Y, Ichikawa M, Maeda K |
8480 - 8484 |
Growth, structure and luminescence properties of multilayer Si/beta-FeSi2NCs/Si/.../Si nanoheterostructures Galkin NG, Chusovitin EA, Shamirsaev TS, Gutakovski AK, Latyshev AV |
8485 - 8489 |
Antireflection coatings with FeSi2 layer: Application to low-reflectivity wire grid polarizers Suzuki M, Takada A, Yamada T, Hayasaka T, Sasaki K, Takahashi E, Kumagai S |
8490 - 8495 |
Computational design of high efficiency FeSi2 thin-film solar cells Gao Y, Liu HW, Lin Y, Shao G |
8496 - 8500 |
Basic properties of Sr1-xBaxSi2 Imai M, Sato A, Kimura T, Aoyagi T |
8501 - 8504 |
Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells Suemasu T, Saito T, Toh K, Okada A, Khan MA |
8505 - 8508 |
Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon Ono Y, Miyazaki Y, Yabuuchi S, Kageshima H, Nagase M, Fujiwara A, Ohta E |
8509 - 8511 |
Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy Sadakuni-Makabe K, Suzuno M, Harada K, Suemasu T, Akinaga H |
8512 - 8515 |
Fe3Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO2 film technique Nakamura Y, Fukuda K, Amari S, Ichikawa M |
8516 - 8519 |
Magnetisation of bulk Mn11Si19 and Mn4Si7 Hammura K, Udono H, Ohsugi IJ, Aono T, De Ranieri E |
8520 - 8523 |
Effect of deposition rate and a-Si precursor or cap layer on structure and magnetic properties of iron films on silicon substrates Gouralnik AS, Galkin NG, Ivanov VA, Cherednichenko AI, Plotnikov VS, Pustovalov EV |
8524 - 8527 |
Preparation of Higher Manganese Silicide (HMS) bulk and Fe-containing HMS bulk using a Na-Si Melt and their thermoelectrical properties Yamada T, Miyazaki Y, Yamane H |
8528 - 8531 |
Thermoelectric properties and power generation characteristics of sintered undoped n-type Mg2Si Sakamoto T, Iida T, Fukushima N, Honda Y, Tada M, Taguchi Y, Mito Y, Taguchi H, Takanashi Y |
8532 - 8537 |
Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application Hayakawa Y, Arivanandhan M, Saito Y, Koyama T, Momose Y, Ikeda H, Tanaka A, Wen CL, Kubota Y, Nakamura T, Bhattacharya S, Aswal DK, Babu SM, Inatomi Y, Tatsuoka H |
8538 - 8541 |
Simple synthesis of ZrO2/SiOx core/shell nanofibers using ZrSi2 with gallium Yang Q, Tanaka M, Liang SH, Ogino K, Fujii H, Ishida A, Tatsuoka H |