Journal of Crystal Growth

Journal of Crystal Growth, Vol.371 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (28 articles)

1 - 6	Effect of tin addition on primary silicon recovery in Si-Al melt during solidification refining of silicon Li JY, Liu Y, Tan Y, Li YQ, Zhang L, Wu SR, Jia PJ
7 - 10	Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy Zhou K, Liu JP, Zhang SM, Li ZC, Feng MX, Li DY, Zhang LQ, Wang F, Zhu JJ, Yang H
11 - 16	Phase control of semi-polar (11(2)over-bar2) and non-polar (11(2)over-bar0) GaN on cone shaped r-plane patterned sapphire substrates Wang MT, Brunner F, Liao KY, Li YL, Tseng SH, Weyers M
17 - 22	Cycloid crystals by topology change Matsuura T, Matsuyama T, Tanda S
23 - 27	Vapor-liquid-solid growth of thick 2H-SiC layers under CH4 continuous flow Nakagawa Y, Takeuchi S, Ishikawa A, Imade M, Yoshimura M, Mori Y
28 - 33	Growth and characterization of low yttria-doped fully cubic stabilized zirconia-based single crystals Berendts S, Lerch M
34 - 38	High surface area calcite Schultz LN, Andersson MP, Dalby KN, Muter D, Okhrimenko DV, Fordsmand H, Stipp SLS
39 - 44	Controlling structural properties of positioned quantum dots Helfrich M, Terhalle B, Ekinci Y, Schaadt DM
45 - 49	Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates Cho E, Mogilatenko A, Brunner F, Richter E, Weyers M
50 - 55	In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface Katkov AV, Wang CC, Chi JY
56 - 59	Base-growth mechanism of double-walled carbon nanotube in chemical vapor deposition Shahrokhabadi H, Saeidi M, Vaezzadeh M, Shahivandi H, Salehian M
60 - 69	Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT Kirpo M
70 - 76	REECOB: 20 years of rare earth element calcium oxoborates crystal growth research Mockel R, Reuther C, Gotze J
77 - 83	Surface tension of liquid silicon: High or low value? Eustathopoulos N, Drevet B
84 - 89	Inclusion behavior of Cs, Sr, and Ba impurities in LiCl crystal formed by layer-melt crystallization: Combined first-principles calculation and experimental study Choi JH, Cho YZ, Lee TK, Eun HC, Kim JH, Kim IT, Park GI, Kang JK
90 - 93	On thermal conditions and properties of thallium bromide single crystals grown by the Electro Dynamic Gradient method Zheng ZP, Yu YT, Gong SP, Fu QY, Zhou DX
94 - 101	Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 degrees off-axis 4H-SiC Song HZ, Sudarshan TS
102 - 106	The role of alkali additives in the crystallization of ferroelectric potassium lithium niobate crystals Peter A, Hajdara I, Szaller Z, Lengyel K, Kovacs L
107 - 111	In-situ study on growth units of Ba2Mg(B3O6)(2) crystal Lv XS, Sun YL, Tang XL, Wan SM, Zhang QL, You JL, Yin ST
112 - 116	Crystal growth and scintillation properties of CsCaBr3:Eu2+ (CsCa1-xEuxBr3, 0 <= x <= 0.08) Grippa AY, Rebrova NV, Gorbacheva TE, Pedash VY, Kosinov NN, Cherginets VL, Tarasov VA, Tarasenko OA, Lopin AV
117 - 121	Time evolution of self-assembled GaAs quantum rings grown by droplet epitaxy Tung KHP, Gao HW, Xiang N
122 - 125	GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy Fan J, Ouyang L, Liu X, Furdyna JK, Smith DJ, Zhang YH
126 - 129	Microstructure and optical properties of Fe-doped ZnO thin films prepared by DC magnetron sputtering Gao F, Liu XY, Zheng LY, Li MX, Bai YM, Xie J
130 - 133	Mismatch and thermal strain analysis in MBE-grown HgCdTe/CdZnTe Ballet P, Jonchere A, Amstatt B, Baudry X, Polge B, Brellier D, Gergaud P
134 - 141	Silicon optical fiber diameter dependent grain size Scott BL, Pickrell GR
142 - 147	Misorientation defects in coalesced self-catalyzed GaN nanowires Grossklaus KA, Banerjee A, Jahangir S, Bhattacharya P, Millunchick JM
148 - 154	InP nanowires synthesized via solvothermal process with CTAB assisted Zhao YS, Yu YL, Gao FM
155 - 162	State of the art of the heavy metal iodides as photoconductors for digital imaging Fornaro L