Journal of Crystal Growth

Journal of Crystal Growth, Vol.407 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (15 articles)

1 - 5	Synthesis of large single crystals of AlPO-LTA by using n-Propylamine as structure directing agent Xu XT, Zhai JP, Chen YP, Li IL, Chen HY, Ruan SC, Tang ZK
6 - 10	Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy Woo S, Kim M, So B, Yoo G, Jang J, Lee K, Nam O
11 - 16	Growth of nonpolar ZnO Films on (100) beta-LiGaO2 substrate by molecular beam epitaxy Lee CY, Chen CL, Chang LW, Chou MMC
17 - 24	Controlled growth of copper oxide nanostructures by atmospheric pressure micro-afterglow Altaweel A, Filipic G, Gries T, Belmonte T
25 - 30	Synthesis of nickel catalyzed Si/SiC core-shell nanowires by HWCVD Goh BT, Rahman SA
31 - 36	Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method Kivambe M, Powell D, Castellanos S, Jensen MA, Morishige AE, Nakajima K, Morishita K, Murai R, Buonassisi T
37 - 41	Interface effect on structural and optical properties of type II InAs/GaSb superlattices Huang JL, Ma WQ, Wei Y, Zhang YH, Cui K, Shao J
42 - 47	Optimization of heating conditions during Cz BGO crystal growth Kolesnikov AV, Galenin EP, Sidletskiy OT, Kalaev VV
48 - 51	A new photoluminescence band in copper-contaminated n-type Czochralski silicon Xu J, Xie TT, Lv YC, Ji C
52 - 57	Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds Sochacki T, Amilusik M, Fijalkowski M, Lucznik B, Weyher JL, Grzegory I, Kucharski R, Iwinska M, Bockowski M
58 - 62	High quality crack-free GaN film grown on si (111) substrate without AlN interlayer Li DW, Diao JS, Zhuo XJ, Zhang J, Liu C, Wang XF, Zhao BJ, Li K, Yu L, Zhang YW, He M, Li ST
63 - 67	Reduction of bulk carrier concentration in Bridgman-grown Bi2Se3 topological insulator by crystallization with Se excess and Ca doping Hruban A, Strzelecka SG, Materna A, Wolos A, Jurkiewicz-Wegner E, Piersa M, Orlowski W, Dalecki W, Kaminska M, Romaniec M
68 - 73	Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy Ju GX, Fuchi SG, Tabuchi M, Amano H, Takeda Y
74 - 77	Growth and structure characterization of EuSi2 films and nanoislands on vicinal Si(001) surface Seiler A, Bauder O, Ibrahimkutty S, Pradip R, Prussmann T, Vitova T, Fiederle M, Baumbach T, Stankov S
78 - 86	Carbonate orientational order and superlattice structure in vaterite Wang JW, Zhang FX, Zhang JM, Ewing RC, Becker U, Cai ZH