1 - 7 |
Density functional theory study of the adsorption and incorporation of Sc and Y on the AlN(0001) surface Gonzalez-Hernandez R, Gonzalez-Garcia A, Lopez-Perez W |
8 - 14 |
Investigation of thermodynamics properties of chalcopyrite compound CdGeAs2 Huang W, Zhao BJ, Zhu SF, He ZY, Chen BJ, Zhen Z, Pu YX, Liu WJ |
15 - 19 |
A molecular dynamics study of nucleation of dislocation in growth of silicon from melt Zhou NG, Wu XY, Wei XQ, Zhou L, Wan YP, Hu DL |
20 - 24 |
PbSe films by ion exchange of synthetic plumbonacrite layers immersed in a selenium ionic solution Mendivil-Reynoso T, Ochoa-Landin R, Ramirez-Rodriguez LP, Gutierrez-Acosta K, Ramirez-Bon R, Castillo SJ |
25 - 30 |
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD Boschi F, Bosi M, Berzina T, Buffagni E, Ferrari C, Fornari R |
31 - 37 |
Enzyme-assisted growth of nacreous CaCO3/polymer hybrid nanolaminates via the formation of mineral bridges Yeom B, Char K |
38 - 42 |
Selective area growth of Bi2Te3 and Sb2Te3 topological insulator thin films Kampmeier J, Weyrich C, Lanius M, Schall M, Neumann E, Mussler G, Schapers T, Grutzmacher D |
43 - 49 |
Antiscalant properties of Spergularia rubra and Parietaria officinalis aqueous solutions Cheap-Charpentier H, Gelus D, Pecoul N, Perrot H, Ledion J, Horner O, Sadoun J, Cachet X, Litaudon M, Roussi F |
50 - 53 |
Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition Golalikhani M, Lei QY, Wolak MA, Davidson BA, Xi XX |
54 - 61 |
Melt growth, structure and properties of (ZrO2)(1-x)(Sc2O3)(x) solid solution crystals (x=0.035-0.11) Borik MA, Bredikhin SI, Kulebyakin AV, Kuritsyna IE, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Panov VA, Ryabochkina PA, Seryakov SV, Tabachkova NY |
62 - 65 |
Magnetic anisotropy of epitaxially (100)- and (111)-oriented Sr0.8Ho0.2CoO3-delta thin films on SrTiO3 substrates Ahn Y, Seo J, Son JY |
66 - 74 |
Interface properties of Ge on cubic SrHfO3 (001) Wang JL, Wang CX, Tang G, Zhang JT, Guo SD, Han YJ |
75 - 80 |
High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors Barreteau C, Michon B, Besnard C, Giannini E |
81 - 84 |
Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition Liu YS, Haq AFMS, Kao TT, Mehta K, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Xie HG, Ponce FA |
85 - 89 |
InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate Xiang W, Wang GW, Hao HY, Liao YP, Han X, Zhang LC, Xu YQ, Ren ZW, Ni HQ, He ZH, Niu ZC |
90 - 97 |
Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy Sarwar ATMG, Yang F, Esser BD, Kent TF, McComb DW, Myers RC |